KR0154347B1 - 박막 트랜지스터 기판 및 그 제조방법 - Google Patents

박막 트랜지스터 기판 및 그 제조방법 Download PDF

Info

Publication number
KR0154347B1
KR0154347B1 KR1019940029685A KR19940029685A KR0154347B1 KR 0154347 B1 KR0154347 B1 KR 0154347B1 KR 1019940029685 A KR1019940029685 A KR 1019940029685A KR 19940029685 A KR19940029685 A KR 19940029685A KR 0154347 B1 KR0154347 B1 KR 0154347B1
Authority
KR
South Korea
Prior art keywords
gate
source
wiring
film
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019940029685A
Other languages
English (en)
Korean (ko)
Inventor
마코토 사사키
히로후미 후쿠이
마사노리 미야자키
히토시 세키
야스히코 카사마
Original Assignee
아베 아키라
가부시키 가이샤 후론텍크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아베 아키라, 가부시키 가이샤 후론텍크 filed Critical 아베 아키라
Application granted granted Critical
Publication of KR0154347B1 publication Critical patent/KR0154347B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13458—Terminal pads
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
KR1019940029685A 1993-11-16 1994-11-12 박막 트랜지스터 기판 및 그 제조방법 Expired - Lifetime KR0154347B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP93-311365 1993-11-16
JP31136593A JP2886066B2 (ja) 1993-11-16 1993-11-16 薄膜トランジスタ基板およびその製造方法

Publications (1)

Publication Number Publication Date
KR0154347B1 true KR0154347B1 (ko) 1998-12-01

Family

ID=18016296

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940029685A Expired - Lifetime KR0154347B1 (ko) 1993-11-16 1994-11-12 박막 트랜지스터 기판 및 그 제조방법

Country Status (4)

Country Link
US (1) US5573958A (cg-RX-API-DMAC7.html)
JP (1) JP2886066B2 (cg-RX-API-DMAC7.html)
KR (1) KR0154347B1 (cg-RX-API-DMAC7.html)
TW (1) TW264562B (cg-RX-API-DMAC7.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3883641B2 (ja) * 1997-03-27 2007-02-21 株式会社半導体エネルギー研究所 コンタクト構造およびアクティブマトリクス型表示装置
JP4169896B2 (ja) * 1999-06-23 2008-10-22 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタとその製造方法
JP5408829B2 (ja) 1999-12-28 2014-02-05 ゲットナー・ファンデーション・エルエルシー アクティブマトリックス基板の製造方法
TWI338171B (en) * 2005-05-02 2011-03-01 Au Optronics Corp Display device and wiring structure and method for forming the same
KR101512844B1 (ko) * 2008-02-01 2015-04-21 삼성전자주식회사 항산화막용 조성물, 이를 이용한 항산화막 형성방법 및이로부터 제조된 전자부품용 기재
KR101019048B1 (ko) 2008-11-20 2011-03-07 엘지디스플레이 주식회사 어레이 기판 및 이의 제조방법
CN104779272B (zh) * 2015-04-10 2016-04-06 京东方科技集团股份有限公司 薄膜晶体管和阵列基板及其制作方法、显示装置
US11430666B2 (en) 2019-12-31 2022-08-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacturing semiconductor device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4803536A (en) * 1986-10-24 1989-02-07 Xerox Corporation Electrostatic discharge protection network for large area transducer arrays
US4960719A (en) * 1988-02-04 1990-10-02 Seikosha Co., Ltd. Method for producing amorphous silicon thin film transistor array substrate
JPH01217421A (ja) * 1988-02-26 1989-08-31 Seikosha Co Ltd 非晶質シリコン薄膜トランジスタアレイ基板およびその製造方法
US5219771A (en) * 1988-07-30 1993-06-15 Fuji Xerox Co., Ltd. Method of producing a thin film transistor device
JP2653557B2 (ja) * 1991-01-16 1997-09-17 シャープ株式会社 電極配線基板
JP2530990B2 (ja) * 1992-10-15 1996-09-04 富士通株式会社 薄膜トランジスタ・マトリクスの製造方法
JPH06160905A (ja) * 1992-11-26 1994-06-07 Sanyo Electric Co Ltd 液晶表示装置およびその製造方法
US5384271A (en) * 1993-10-04 1995-01-24 General Electric Company Method for reduction of off-current in thin film transistors

Also Published As

Publication number Publication date
TW264562B (cg-RX-API-DMAC7.html) 1995-12-01
JP2886066B2 (ja) 1999-04-26
US5573958A (en) 1996-11-12
JPH07147410A (ja) 1995-06-06

Similar Documents

Publication Publication Date Title
JP3734891B2 (ja) 液晶表示装置および液晶表示装置の製造方法
US6215541B1 (en) Liquid crystal displays and manufacturing methods thereof
US5835177A (en) Array substrate with bus lines takeout/terminal sections having multiple conductive layers
KR100467545B1 (ko) 트랜지스터 디바이스
KR920005512B1 (ko) 비정질 실리콘 박막 트랜지스터 어레이 기판 및 그 제조방법
US5998230A (en) Method for making liquid crystal display device with reduced mask steps
KR20040018784A (ko) 박막 트랜지스터 어레이 기판 및 그 제조 방법
US7019797B2 (en) Array substrate for liquid crystal display device and manufacturing method thereof
KR100688372B1 (ko) 기판, 그 기판을 구비한 액정 표시 장치 및 기판을제조하는 방법
KR0154347B1 (ko) 박막 트랜지스터 기판 및 그 제조방법
KR100202231B1 (ko) 액정표시장치의 제조방법 및 액정표시장치의 구조
KR100783702B1 (ko) 박막 트랜지스터 기판 및 그 제조 방법
KR20010055970A (ko) 정전기 방전 구조를 가지는 액정 표시 장치용 박막트랜지스터 기판 및 그 제조 방법
KR100233151B1 (ko) 박막 트랜지스터 기판의 제조 방법
KR100229610B1 (ko) 액정표시장치 및 그 제조방법
KR100580397B1 (ko) 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법
KR100897720B1 (ko) 액정표시장치의 제조방법
KR20000047142A (ko) 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법
KR100330097B1 (ko) 액정표시장치용박막트랜지스터기판및그제조방법
KR100268105B1 (ko) 박막트랜지스터기판및그제조방법
KR100653466B1 (ko) 액정표시소자의제조방법
KR19990008583A (ko) 액정표시장치의 기판 및 그 액정표시장치의 기판의 제조방법
KR20010057663A (ko) 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법
KR20010010116A (ko) 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법
KR20020043860A (ko) 액정 표시 장치용 어레이 기판 및 그 제조 방법

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19941112

PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19941112

Comment text: Request for Examination of Application

PG1501 Laying open of application
N231 Notification of change of applicant
PN2301 Change of applicant

Patent event date: 19950822

Comment text: Notification of Change of Applicant

Patent event code: PN23011R01D

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 19980130

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 19980417

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 19980709

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 19980709

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20010627

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20020624

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20030701

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20040629

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20050627

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20060629

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20070629

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20080701

Start annual number: 11

End annual number: 11

PR1001 Payment of annual fee

Payment date: 20090622

Start annual number: 12

End annual number: 12

PR1001 Payment of annual fee

Payment date: 20100621

Start annual number: 13

End annual number: 13

PR1001 Payment of annual fee

Payment date: 20110615

Start annual number: 14

End annual number: 14

PR1001 Payment of annual fee

Payment date: 20120628

Start annual number: 15

End annual number: 15

FPAY Annual fee payment

Payment date: 20130619

Year of fee payment: 16

PR1001 Payment of annual fee

Payment date: 20130619

Start annual number: 16

End annual number: 16

FPAY Annual fee payment

Payment date: 20140630

Year of fee payment: 17

PR1001 Payment of annual fee

Payment date: 20140630

Start annual number: 17

End annual number: 17

EXPY Expiration of term
PC1801 Expiration of term

Termination date: 20150512

Termination category: Expiration of duration