TW264562B - - Google Patents
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- Publication number
- TW264562B TW264562B TW083108966A TW83108966A TW264562B TW 264562 B TW264562 B TW 264562B TW 083108966 A TW083108966 A TW 083108966A TW 83108966 A TW83108966 A TW 83108966A TW 264562 B TW264562 B TW 264562B
- Authority
- TW
- Taiwan
- Prior art keywords
- gate
- film
- source
- wiring
- terminal
- Prior art date
Links
- 239000010408 film Substances 0.000 claims description 140
- 239000000758 substrate Substances 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 37
- 239000004065 semiconductor Substances 0.000 claims description 26
- 239000010409 thin film Substances 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 description 12
- 230000001681 protective effect Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 239000004020 conductor Substances 0.000 description 9
- 230000002159 abnormal effect Effects 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 210000003625 skull Anatomy 0.000 description 7
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 101100489584 Solanum lycopersicum TFT1 gene Proteins 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052770 Uranium Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 2
- 241001597062 Channa argus Species 0.000 description 1
- 206010040844 Skin exfoliation Diseases 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003307 slaughter Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13458—Terminal pads
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31136593A JP2886066B2 (ja) | 1993-11-16 | 1993-11-16 | 薄膜トランジスタ基板およびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW264562B true TW264562B (cg-RX-API-DMAC7.html) | 1995-12-01 |
Family
ID=18016296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW083108966A TW264562B (cg-RX-API-DMAC7.html) | 1993-11-16 | 1994-09-27 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5573958A (cg-RX-API-DMAC7.html) |
| JP (1) | JP2886066B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR0154347B1 (cg-RX-API-DMAC7.html) |
| TW (1) | TW264562B (cg-RX-API-DMAC7.html) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3883641B2 (ja) * | 1997-03-27 | 2007-02-21 | 株式会社半導体エネルギー研究所 | コンタクト構造およびアクティブマトリクス型表示装置 |
| JP4169896B2 (ja) * | 1999-06-23 | 2008-10-22 | エルジー ディスプレイ カンパニー リミテッド | 薄膜トランジスタとその製造方法 |
| JP5408829B2 (ja) | 1999-12-28 | 2014-02-05 | ゲットナー・ファンデーション・エルエルシー | アクティブマトリックス基板の製造方法 |
| TWI338171B (en) * | 2005-05-02 | 2011-03-01 | Au Optronics Corp | Display device and wiring structure and method for forming the same |
| KR101512844B1 (ko) * | 2008-02-01 | 2015-04-21 | 삼성전자주식회사 | 항산화막용 조성물, 이를 이용한 항산화막 형성방법 및이로부터 제조된 전자부품용 기재 |
| KR101019048B1 (ko) | 2008-11-20 | 2011-03-07 | 엘지디스플레이 주식회사 | 어레이 기판 및 이의 제조방법 |
| CN104779272B (zh) * | 2015-04-10 | 2016-04-06 | 京东方科技集团股份有限公司 | 薄膜晶体管和阵列基板及其制作方法、显示装置 |
| US11430666B2 (en) | 2019-12-31 | 2022-08-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4803536A (en) * | 1986-10-24 | 1989-02-07 | Xerox Corporation | Electrostatic discharge protection network for large area transducer arrays |
| US4960719A (en) * | 1988-02-04 | 1990-10-02 | Seikosha Co., Ltd. | Method for producing amorphous silicon thin film transistor array substrate |
| JPH01217421A (ja) * | 1988-02-26 | 1989-08-31 | Seikosha Co Ltd | 非晶質シリコン薄膜トランジスタアレイ基板およびその製造方法 |
| US5219771A (en) * | 1988-07-30 | 1993-06-15 | Fuji Xerox Co., Ltd. | Method of producing a thin film transistor device |
| JP2653557B2 (ja) * | 1991-01-16 | 1997-09-17 | シャープ株式会社 | 電極配線基板 |
| JP2530990B2 (ja) * | 1992-10-15 | 1996-09-04 | 富士通株式会社 | 薄膜トランジスタ・マトリクスの製造方法 |
| JPH06160905A (ja) * | 1992-11-26 | 1994-06-07 | Sanyo Electric Co Ltd | 液晶表示装置およびその製造方法 |
| US5384271A (en) * | 1993-10-04 | 1995-01-24 | General Electric Company | Method for reduction of off-current in thin film transistors |
-
1993
- 1993-11-16 JP JP31136593A patent/JP2886066B2/ja not_active Expired - Lifetime
-
1994
- 1994-09-27 TW TW083108966A patent/TW264562B/zh not_active IP Right Cessation
- 1994-11-12 KR KR1019940029685A patent/KR0154347B1/ko not_active Expired - Lifetime
- 1994-11-14 US US08/338,713 patent/US5573958A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2886066B2 (ja) | 1999-04-26 |
| US5573958A (en) | 1996-11-12 |
| KR0154347B1 (ko) | 1998-12-01 |
| JPH07147410A (ja) | 1995-06-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |