JP2886066B2 - 薄膜トランジスタ基板およびその製造方法 - Google Patents

薄膜トランジスタ基板およびその製造方法

Info

Publication number
JP2886066B2
JP2886066B2 JP31136593A JP31136593A JP2886066B2 JP 2886066 B2 JP2886066 B2 JP 2886066B2 JP 31136593 A JP31136593 A JP 31136593A JP 31136593 A JP31136593 A JP 31136593A JP 2886066 B2 JP2886066 B2 JP 2886066B2
Authority
JP
Japan
Prior art keywords
gate
terminal
source
insulating film
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP31136593A
Other languages
English (en)
Japanese (ja)
Other versions
JPH07147410A (ja
Inventor
洋文 福井
斎 関
正徳 宮崎
真 佐々木
泰彦 笠間
忠弘 大見
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FURONTETSUKU KK
Original Assignee
FURONTETSUKU KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FURONTETSUKU KK filed Critical FURONTETSUKU KK
Priority to JP31136593A priority Critical patent/JP2886066B2/ja
Priority to TW083108966A priority patent/TW264562B/zh
Priority to KR1019940029685A priority patent/KR0154347B1/ko
Priority to US08/338,713 priority patent/US5573958A/en
Publication of JPH07147410A publication Critical patent/JPH07147410A/ja
Application granted granted Critical
Publication of JP2886066B2 publication Critical patent/JP2886066B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13458—Terminal pads
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
JP31136593A 1993-11-16 1993-11-16 薄膜トランジスタ基板およびその製造方法 Expired - Lifetime JP2886066B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP31136593A JP2886066B2 (ja) 1993-11-16 1993-11-16 薄膜トランジスタ基板およびその製造方法
TW083108966A TW264562B (cg-RX-API-DMAC7.html) 1993-11-16 1994-09-27
KR1019940029685A KR0154347B1 (ko) 1993-11-16 1994-11-12 박막 트랜지스터 기판 및 그 제조방법
US08/338,713 US5573958A (en) 1993-11-16 1994-11-14 Method of fabricating a thin film transistor wherein the gate terminal is formed after the gate insulator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31136593A JP2886066B2 (ja) 1993-11-16 1993-11-16 薄膜トランジスタ基板およびその製造方法

Publications (2)

Publication Number Publication Date
JPH07147410A JPH07147410A (ja) 1995-06-06
JP2886066B2 true JP2886066B2 (ja) 1999-04-26

Family

ID=18016296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31136593A Expired - Lifetime JP2886066B2 (ja) 1993-11-16 1993-11-16 薄膜トランジスタ基板およびその製造方法

Country Status (4)

Country Link
US (1) US5573958A (cg-RX-API-DMAC7.html)
JP (1) JP2886066B2 (cg-RX-API-DMAC7.html)
KR (1) KR0154347B1 (cg-RX-API-DMAC7.html)
TW (1) TW264562B (cg-RX-API-DMAC7.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3883641B2 (ja) * 1997-03-27 2007-02-21 株式会社半導体エネルギー研究所 コンタクト構造およびアクティブマトリクス型表示装置
JP4169896B2 (ja) * 1999-06-23 2008-10-22 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタとその製造方法
JP5408829B2 (ja) 1999-12-28 2014-02-05 ゲットナー・ファンデーション・エルエルシー アクティブマトリックス基板の製造方法
TWI338171B (en) * 2005-05-02 2011-03-01 Au Optronics Corp Display device and wiring structure and method for forming the same
KR101512844B1 (ko) * 2008-02-01 2015-04-21 삼성전자주식회사 항산화막용 조성물, 이를 이용한 항산화막 형성방법 및이로부터 제조된 전자부품용 기재
KR101019048B1 (ko) 2008-11-20 2011-03-07 엘지디스플레이 주식회사 어레이 기판 및 이의 제조방법
CN104779272B (zh) * 2015-04-10 2016-04-06 京东方科技集团股份有限公司 薄膜晶体管和阵列基板及其制作方法、显示装置
US11430666B2 (en) 2019-12-31 2022-08-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of manufacturing semiconductor device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4803536A (en) * 1986-10-24 1989-02-07 Xerox Corporation Electrostatic discharge protection network for large area transducer arrays
US4960719A (en) * 1988-02-04 1990-10-02 Seikosha Co., Ltd. Method for producing amorphous silicon thin film transistor array substrate
JPH01217421A (ja) * 1988-02-26 1989-08-31 Seikosha Co Ltd 非晶質シリコン薄膜トランジスタアレイ基板およびその製造方法
US5219771A (en) * 1988-07-30 1993-06-15 Fuji Xerox Co., Ltd. Method of producing a thin film transistor device
JP2653557B2 (ja) * 1991-01-16 1997-09-17 シャープ株式会社 電極配線基板
JP2530990B2 (ja) * 1992-10-15 1996-09-04 富士通株式会社 薄膜トランジスタ・マトリクスの製造方法
JPH06160905A (ja) * 1992-11-26 1994-06-07 Sanyo Electric Co Ltd 液晶表示装置およびその製造方法
US5384271A (en) * 1993-10-04 1995-01-24 General Electric Company Method for reduction of off-current in thin film transistors

Also Published As

Publication number Publication date
TW264562B (cg-RX-API-DMAC7.html) 1995-12-01
US5573958A (en) 1996-11-12
KR0154347B1 (ko) 1998-12-01
JPH07147410A (ja) 1995-06-06

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