JPWO2024252870A5 - - Google Patents

Info

Publication number
JPWO2024252870A5
JPWO2024252870A5 JP2025526021A JP2025526021A JPWO2024252870A5 JP WO2024252870 A5 JPWO2024252870 A5 JP WO2024252870A5 JP 2025526021 A JP2025526021 A JP 2025526021A JP 2025526021 A JP2025526021 A JP 2025526021A JP WO2024252870 A5 JPWO2024252870 A5 JP WO2024252870A5
Authority
JP
Japan
Prior art keywords
electrodes
capacitor elements
dielectric film
semiconductor device
protective layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025526021A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024252870A1 (enExample
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/017949 external-priority patent/WO2024252870A1/ja
Publication of JPWO2024252870A1 publication Critical patent/JPWO2024252870A1/ja
Publication of JPWO2024252870A5 publication Critical patent/JPWO2024252870A5/ja
Pending legal-status Critical Current

Links

JP2025526021A 2023-06-07 2024-05-15 Pending JPWO2024252870A1 (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023094199 2023-06-07
PCT/JP2024/017949 WO2024252870A1 (ja) 2023-06-07 2024-05-15 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2024252870A1 JPWO2024252870A1 (enExample) 2024-12-12
JPWO2024252870A5 true JPWO2024252870A5 (enExample) 2026-03-05

Family

ID=93795339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025526021A Pending JPWO2024252870A1 (enExample) 2023-06-07 2024-05-15

Country Status (4)

Country Link
US (1) US20260082686A1 (enExample)
JP (1) JPWO2024252870A1 (enExample)
CN (1) CN121312282A (enExample)
WO (1) WO2024252870A1 (enExample)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4647194B2 (ja) * 2003-07-14 2011-03-09 新光電気工業株式会社 キャパシタ装置及びその製造方法
JP5138260B2 (ja) * 2006-05-19 2013-02-06 株式会社テラミクロス チップ型電子部品
JP2012038818A (ja) * 2010-08-04 2012-02-23 Toshiba Corp 半導体装置
US9153504B2 (en) * 2013-10-11 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Metal insulator metal capacitor and method for making the same
CN207149541U (zh) * 2015-02-27 2018-03-27 株式会社村田制作所 电容器以及电子设备
JP6489202B2 (ja) * 2015-02-27 2019-03-27 株式会社村田製作所 キャパシタ
US9875848B2 (en) * 2015-12-21 2018-01-23 Qualcomm Incorporated MIM capacitor and method of making the same
JP6451893B2 (ja) * 2016-03-18 2019-01-16 株式会社村田製作所 容量素子
WO2020012691A1 (ja) * 2018-07-11 2020-01-16 株式会社村田製作所 容量素子

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