CN121312282A - 半导体装置 - Google Patents

半导体装置

Info

Publication number
CN121312282A
CN121312282A CN202480037187.4A CN202480037187A CN121312282A CN 121312282 A CN121312282 A CN 121312282A CN 202480037187 A CN202480037187 A CN 202480037187A CN 121312282 A CN121312282 A CN 121312282A
Authority
CN
China
Prior art keywords
electrodes
electrode
capacitor
dielectric film
capacitor elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480037187.4A
Other languages
English (en)
Chinese (zh)
Inventor
原田真臣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of CN121312282A publication Critical patent/CN121312282A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN202480037187.4A 2023-06-07 2024-05-15 半导体装置 Pending CN121312282A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023094199 2023-06-07
JP2023-094199 2023-06-07
PCT/JP2024/017949 WO2024252870A1 (ja) 2023-06-07 2024-05-15 半導体装置

Publications (1)

Publication Number Publication Date
CN121312282A true CN121312282A (zh) 2026-01-09

Family

ID=93795339

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480037187.4A Pending CN121312282A (zh) 2023-06-07 2024-05-15 半导体装置

Country Status (4)

Country Link
US (1) US20260082686A1 (enExample)
JP (1) JPWO2024252870A1 (enExample)
CN (1) CN121312282A (enExample)
WO (1) WO2024252870A1 (enExample)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4647194B2 (ja) * 2003-07-14 2011-03-09 新光電気工業株式会社 キャパシタ装置及びその製造方法
JP5138260B2 (ja) * 2006-05-19 2013-02-06 株式会社テラミクロス チップ型電子部品
JP2012038818A (ja) * 2010-08-04 2012-02-23 Toshiba Corp 半導体装置
US9153504B2 (en) * 2013-10-11 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Metal insulator metal capacitor and method for making the same
CN207149541U (zh) * 2015-02-27 2018-03-27 株式会社村田制作所 电容器以及电子设备
JP6489202B2 (ja) * 2015-02-27 2019-03-27 株式会社村田製作所 キャパシタ
US9875848B2 (en) * 2015-12-21 2018-01-23 Qualcomm Incorporated MIM capacitor and method of making the same
JP6451893B2 (ja) * 2016-03-18 2019-01-16 株式会社村田製作所 容量素子
WO2020012691A1 (ja) * 2018-07-11 2020-01-16 株式会社村田製作所 容量素子

Also Published As

Publication number Publication date
US20260082686A1 (en) 2026-03-19
JPWO2024252870A1 (enExample) 2024-12-12
WO2024252870A1 (ja) 2024-12-12

Similar Documents

Publication Publication Date Title
CN112103284B (zh) 芯片元件
US11990264B2 (en) Chip inductor and method for manufacturing the same
US11387810B2 (en) High-frequency module
US9824955B2 (en) Semiconductor device
CN111800105B (zh) 声波谐振器滤波器封装件
US10770451B2 (en) Thin-film ESD protection device
US11444078B2 (en) ESD protection element
WO2014132939A1 (ja) 半導体装置
KR100475477B1 (ko) 인덕턴스 소자 및 반도체 장치
US20160173059A1 (en) Electrical Component Suitable For Miniaturization with Reduced Coupling
JP6424994B1 (ja) 薄膜ｅｓｄ保護デバイス
US12341496B2 (en) Radio-frequency module
JP4518013B2 (ja) 電子部品
US20190244761A1 (en) Capacitor
CN121312282A (zh) 半导体装置
US20240364308A1 (en) Composite filter device
US20230253341A1 (en) Circuit module
JPH0951206A (ja) 分波器及びその製造方法
CN117280433A (zh) 半导体装置
US20250037919A1 (en) Electronic component
US12232269B2 (en) Electronic component module
US20240213957A1 (en) Integrated balun and filter
US20260066877A1 (en) Composite filter device
JP6256575B2 (ja) 高周波モジュール
CN121617799A (zh) 线圈部件

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination