JPWO2024214501A5 - - Google Patents

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Publication number
JPWO2024214501A5
JPWO2024214501A5 JP2025513857A JP2025513857A JPWO2024214501A5 JP WO2024214501 A5 JPWO2024214501 A5 JP WO2024214501A5 JP 2025513857 A JP2025513857 A JP 2025513857A JP 2025513857 A JP2025513857 A JP 2025513857A JP WO2024214501 A5 JPWO2024214501 A5 JP WO2024214501A5
Authority
JP
Japan
Prior art keywords
electrode
insulating film
semiconductor device
reference surface
partial side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025513857A
Other languages
English (en)
Japanese (ja)
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JPWO2024214501A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/010727 external-priority patent/WO2024214501A1/ja
Publication of JPWO2024214501A1 publication Critical patent/JPWO2024214501A1/ja
Publication of JPWO2024214501A5 publication Critical patent/JPWO2024214501A5/ja
Pending legal-status Critical Current

Links

JP2025513857A 2023-04-12 2024-03-19 Pending JPWO2024214501A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023064654 2023-04-12
PCT/JP2024/010727 WO2024214501A1 (ja) 2023-04-12 2024-03-19 半導体装置及び電力変換装置

Publications (2)

Publication Number Publication Date
JPWO2024214501A1 JPWO2024214501A1 (https=) 2024-10-17
JPWO2024214501A5 true JPWO2024214501A5 (https=) 2025-06-27

Family

ID=93059125

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025513857A Pending JPWO2024214501A1 (https=) 2023-04-12 2024-03-19

Country Status (3)

Country Link
JP (1) JPWO2024214501A1 (https=)
CN (1) CN120958969A (https=)
WO (1) WO2024214501A1 (https=)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2808871B2 (ja) * 1990-09-17 1998-10-08 富士電機株式会社 Ｍｏｓ型半導体素子の製造方法
JP3532312B2 (ja) * 1995-08-02 2004-05-31 株式会社ルネサステクノロジ 半導体装置
JP4627399B2 (ja) * 2003-07-30 2011-02-09 ルネサスエレクトロニクス株式会社 縦型電界効果トランジスタ及びその製造方法
JP5098294B2 (ja) * 2006-10-30 2012-12-12 株式会社デンソー 炭化珪素半導体装置の製造方法
JP2009004676A (ja) * 2007-06-25 2009-01-08 Seiko Epson Corp 半導体装置及びその製造方法
JP2010010215A (ja) * 2008-06-24 2010-01-14 Oki Semiconductor Co Ltd 半導体装置の製造方法
JP5462020B2 (ja) * 2009-06-09 2014-04-02 株式会社東芝 電力用半導体素子
JP2017139292A (ja) * 2016-02-02 2017-08-10 富士電機株式会社 半導体装置及びその製造方法
DE112019002203B4 (de) * 2018-04-27 2025-12-31 Mitsubishi Electric Corporation Halbleitereinheit und leistungswandler

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