JPWO2024214634A5 - - Google Patents

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Publication number
JPWO2024214634A5
JPWO2024214634A5 JP2025513929A JP2025513929A JPWO2024214634A5 JP WO2024214634 A5 JPWO2024214634 A5 JP WO2024214634A5 JP 2025513929 A JP2025513929 A JP 2025513929A JP 2025513929 A JP2025513929 A JP 2025513929A JP WO2024214634 A5 JPWO2024214634 A5 JP WO2024214634A5
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JP
Japan
Prior art keywords
gate electrode
active region
insulating film
semiconductor device
interlayer insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025513929A
Other languages
English (en)
Japanese (ja)
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JPWO2024214634A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/013976 external-priority patent/WO2024214634A1/ja
Publication of JPWO2024214634A1 publication Critical patent/JPWO2024214634A1/ja
Publication of JPWO2024214634A5 publication Critical patent/JPWO2024214634A5/ja
Pending legal-status Critical Current

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JP2025513929A 2023-04-12 2024-04-04 Pending JPWO2024214634A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023064655 2023-04-12
PCT/JP2024/013976 WO2024214634A1 (ja) 2023-04-12 2024-04-04 半導体装置及び電力変換装置

Publications (2)

Publication Number Publication Date
JPWO2024214634A1 JPWO2024214634A1 (https=) 2024-10-17
JPWO2024214634A5 true JPWO2024214634A5 (https=) 2025-06-17

Family

ID=93059265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025513929A Pending JPWO2024214634A1 (https=) 2023-04-12 2024-04-04

Country Status (3)

Country Link
JP (1) JPWO2024214634A1 (https=)
CN (1) CN121003028A (https=)
WO (1) WO2024214634A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018120879A (ja) * 2015-06-04 2018-08-02 三菱電機株式会社 半導体装置および半導体装置の製造方法
CN115274855B (zh) * 2017-02-24 2025-10-28 三菱电机株式会社 碳化硅半导体装置以及电力变换装置
JP7404702B2 (ja) * 2019-08-09 2023-12-26 富士電機株式会社 半導体装置
JP7580245B2 (ja) * 2020-11-02 2024-11-11 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP7472059B2 (ja) * 2021-02-25 2024-04-22 株式会社東芝 半導体装置

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