CN121003028A - 半导体装置以及电力转换装置 - Google Patents

半导体装置以及电力转换装置

Info

Publication number
CN121003028A
CN121003028A CN202480021594.6A CN202480021594A CN121003028A CN 121003028 A CN121003028 A CN 121003028A CN 202480021594 A CN202480021594 A CN 202480021594A CN 121003028 A CN121003028 A CN 121003028A
Authority
CN
China
Prior art keywords
semiconductor device
gate electrode
insulating film
interlayer insulating
active region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480021594.6A
Other languages
English (en)
Chinese (zh)
Inventor
别府庆治
中田和成
池田宗谦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN121003028A publication Critical patent/CN121003028A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN202480021594.6A 2023-04-12 2024-04-04 半导体装置以及电力转换装置 Pending CN121003028A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023-064655 2023-04-12
JP2023064655 2023-04-12
PCT/JP2024/013976 WO2024214634A1 (ja) 2023-04-12 2024-04-04 半導体装置及び電力変換装置

Publications (1)

Publication Number Publication Date
CN121003028A true CN121003028A (zh) 2025-11-21

Family

ID=93059265

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480021594.6A Pending CN121003028A (zh) 2023-04-12 2024-04-04 半导体装置以及电力转换装置

Country Status (3)

Country Link
JP (1) JPWO2024214634A1 (https=)
CN (1) CN121003028A (https=)
WO (1) WO2024214634A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018120879A (ja) * 2015-06-04 2018-08-02 三菱電機株式会社 半導体装置および半導体装置の製造方法
CN115274855B (zh) * 2017-02-24 2025-10-28 三菱电机株式会社 碳化硅半导体装置以及电力变换装置
JP7404702B2 (ja) * 2019-08-09 2023-12-26 富士電機株式会社 半導体装置
JP7580245B2 (ja) * 2020-11-02 2024-11-11 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP7472059B2 (ja) * 2021-02-25 2024-04-22 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
WO2024214634A1 (ja) 2024-10-17
JPWO2024214634A1 (https=) 2024-10-17

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