JPWO2021149688A5 - - Google Patents

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Publication number
JPWO2021149688A5
JPWO2021149688A5 JP2021572745A JP2021572745A JPWO2021149688A5 JP WO2021149688 A5 JPWO2021149688 A5 JP WO2021149688A5 JP 2021572745 A JP2021572745 A JP 2021572745A JP 2021572745 A JP2021572745 A JP 2021572745A JP WO2021149688 A5 JPWO2021149688 A5 JP WO2021149688A5
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JP
Japan
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dielectric layer
layer
electrode
thickness direction
dimension
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JP2021572745A
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English (en)
Japanese (ja)
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JP7363928B2 (ja
JPWO2021149688A1 (https=
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Priority claimed from PCT/JP2021/001714 external-priority patent/WO2021149688A1/ja
Publication of JPWO2021149688A1 publication Critical patent/JPWO2021149688A1/ja
Publication of JPWO2021149688A5 publication Critical patent/JPWO2021149688A5/ja
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JP2021572745A 2020-01-20 2021-01-19 半導体装置及び容量装置 Active JP7363928B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020006848 2020-01-20
JP2020006848 2020-01-20
PCT/JP2021/001714 WO2021149688A1 (ja) 2020-01-20 2021-01-19 半導体装置及び容量装置

Publications (3)

Publication Number Publication Date
JPWO2021149688A1 JPWO2021149688A1 (https=) 2021-07-29
JPWO2021149688A5 true JPWO2021149688A5 (https=) 2022-09-09
JP7363928B2 JP7363928B2 (ja) 2023-10-18

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JP2021572745A Active JP7363928B2 (ja) 2020-01-20 2021-01-19 半導体装置及び容量装置

Country Status (4)

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US (1) US12424389B2 (https=)
JP (1) JP7363928B2 (https=)
CN (1) CN114981904B (https=)
WO (1) WO2021149688A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102642386B1 (ko) * 2020-06-29 2024-02-29 티디케이가부시기가이샤 박막 캐패시터 및 그 제조 방법 및 박막 캐패시터를 구비하는 전자 회로 기판
WO2024014351A1 (ja) * 2022-07-13 2024-01-18 株式会社村田製作所 キャパシタ
TWI860794B (zh) * 2023-07-26 2024-11-01 欣興電子股份有限公司 電容元件、包含其的線路載板及其製作方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0547586A (ja) * 1991-08-16 1993-02-26 Toshiba Corp コンデンサ部品
US6885081B2 (en) * 2000-11-13 2005-04-26 Sharp Kabushiki Kaisha Semiconductor capacitor device having reduced voltage dependence
US20030011043A1 (en) * 2001-07-14 2003-01-16 Roberts Douglas R. MIM capacitor structure and process for making the same
JP2005079513A (ja) * 2003-09-03 2005-03-24 Seiko Epson Corp 半導体装置及びその製造方法
US7078785B2 (en) * 2003-09-23 2006-07-18 Freescale Semiconductor, Inc. Semiconductor device and making thereof
JP2005191182A (ja) * 2003-12-25 2005-07-14 Nec Electronics Corp 半導体装置及びその製造方法
CN101197210A (zh) * 2006-12-05 2008-06-11 泉州市火炬电子元件厂 多层陶瓷电容器及其制造方法
JP2008153497A (ja) * 2006-12-19 2008-07-03 Murata Mfg Co Ltd 誘電体薄膜キャパシタの製造方法
WO2009078225A1 (ja) * 2007-12-14 2009-06-25 Murata Manufacturing Co., Ltd. 薄膜積層キャパシタの製造方法
KR101090932B1 (ko) * 2008-12-24 2011-12-08 매그나칩 반도체 유한회사 캐패시터 및 그의 제조방법
JP5407775B2 (ja) * 2009-03-31 2014-02-05 Ｔｄｋ株式会社 薄膜コンデンサの製造方法及び薄膜コンデンサ
JP5234521B2 (ja) 2009-08-21 2013-07-10 Ｔｄｋ株式会社 電子部品及びその製造方法
CN103098199B (zh) * 2010-09-13 2014-12-10 株式会社村田制作所 电介质薄膜元件、反熔丝元件及电介质薄膜元件的制造方法
JP2012164714A (ja) * 2011-02-03 2012-08-30 Rohm Co Ltd 半導体装置の製造方法および半導体装置
US9257498B1 (en) * 2014-08-04 2016-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. Process to improve performance for metal-insulator-metal (MIM) capacitors
JP2016219588A (ja) * 2015-05-20 2016-12-22 イビデン株式会社 薄膜キャパシタ
US9761655B1 (en) * 2016-06-20 2017-09-12 International Business Machines Corporation Stacked planar capacitors with scaled EOT
JPWO2018003445A1 (ja) * 2016-06-28 2019-03-07 株式会社村田製作所 キャパシタ
US10468187B2 (en) * 2016-08-05 2019-11-05 Samsung Electro-Mechanics Co., Ltd. Thin-film ceramic capacitor having capacitance forming portions separated by separation slit
KR102748948B1 (ko) * 2016-08-26 2025-01-02 삼성전기주식회사 박막 커패시터 및 그 제조방법
WO2019026771A1 (ja) * 2017-07-31 2019-02-07 株式会社村田製作所 キャパシタ
WO2019026641A1 (ja) * 2017-07-31 2019-02-07 株式会社村田製作所 薄膜コンデンサ及びその製造方法
JP7067616B2 (ja) * 2018-04-18 2022-05-16 株式会社村田製作所 キャパシタおよびその製造方法
JP7156369B2 (ja) * 2018-04-27 2022-10-19 株式会社村田製作所 キャパシタ集合体
US10615249B2 (en) * 2018-07-19 2020-04-07 Vanguard International Semiconductor Corporation Capacitor structures and methods for fabricating the same
US11410921B2 (en) * 2018-08-21 2022-08-09 Intel Corporation Methods to incorporate thin film capacitor sheets (TFC-S) in the build-up films
US11171199B2 (en) * 2019-08-23 2021-11-09 Taiwan Semiconductor Manufacturing Co., Ltd. Metal-insulator-metal capacitors with high breakdown voltage

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