JPWO2021149688A1 - - Google Patents
Info
- Publication number
- JPWO2021149688A1 JPWO2021149688A1 JP2021572745A JP2021572745A JPWO2021149688A1 JP WO2021149688 A1 JPWO2021149688 A1 JP WO2021149688A1 JP 2021572745 A JP2021572745 A JP 2021572745A JP 2021572745 A JP2021572745 A JP 2021572745A JP WO2021149688 A1 JPWO2021149688 A1 JP WO2021149688A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/10—Metal-oxide dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1254—Ceramic dielectrics characterised by the ceramic dielectric material based on niobium or tungsteen, tantalum oxides or niobates, tantalates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1272—Semiconductive ceramic capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/20—Dielectrics using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/252—Terminals the terminals being coated on the capacitive element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
- H01G4/306—Stacked capacitors made by thin film techniques
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
- H10W20/48—Insulating materials thereof
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Semiconductor Integrated Circuits (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020006848 | 2020-01-20 | ||
| JP2020006848 | 2020-01-20 | ||
| PCT/JP2021/001714 WO2021149688A1 (ja) | 2020-01-20 | 2021-01-19 | 半導体装置及び容量装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021149688A1 true JPWO2021149688A1 (https=) | 2021-07-29 |
| JPWO2021149688A5 JPWO2021149688A5 (https=) | 2022-09-09 |
| JP7363928B2 JP7363928B2 (ja) | 2023-10-18 |
Family
ID=76992976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021572745A Active JP7363928B2 (ja) | 2020-01-20 | 2021-01-19 | 半導体装置及び容量装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12424389B2 (https=) |
| JP (1) | JP7363928B2 (https=) |
| CN (1) | CN114981904B (https=) |
| WO (1) | WO2021149688A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102642386B1 (ko) * | 2020-06-29 | 2024-02-29 | 티디케이가부시기가이샤 | 박막 캐패시터 및 그 제조 방법 및 박막 캐패시터를 구비하는 전자 회로 기판 |
| WO2024014351A1 (ja) * | 2022-07-13 | 2024-01-18 | 株式会社村田製作所 | キャパシタ |
| TWI860794B (zh) * | 2023-07-26 | 2024-11-01 | 欣興電子股份有限公司 | 電容元件、包含其的線路載板及其製作方法 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0547586A (ja) * | 1991-08-16 | 1993-02-26 | Toshiba Corp | コンデンサ部品 |
| JP2005079513A (ja) * | 2003-09-03 | 2005-03-24 | Seiko Epson Corp | 半導体装置及びその製造方法 |
| JP2005191182A (ja) * | 2003-12-25 | 2005-07-14 | Nec Electronics Corp | 半導体装置及びその製造方法 |
| JP2008153497A (ja) * | 2006-12-19 | 2008-07-03 | Murata Mfg Co Ltd | 誘電体薄膜キャパシタの製造方法 |
| JP2016219588A (ja) * | 2015-05-20 | 2016-12-22 | イビデン株式会社 | 薄膜キャパシタ |
| US9761655B1 (en) * | 2016-06-20 | 2017-09-12 | International Business Machines Corporation | Stacked planar capacitors with scaled EOT |
| WO2019026771A1 (ja) * | 2017-07-31 | 2019-02-07 | 株式会社村田製作所 | キャパシタ |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6885081B2 (en) * | 2000-11-13 | 2005-04-26 | Sharp Kabushiki Kaisha | Semiconductor capacitor device having reduced voltage dependence |
| US20030011043A1 (en) * | 2001-07-14 | 2003-01-16 | Roberts Douglas R. | MIM capacitor structure and process for making the same |
| US7078785B2 (en) * | 2003-09-23 | 2006-07-18 | Freescale Semiconductor, Inc. | Semiconductor device and making thereof |
| CN101197210A (zh) * | 2006-12-05 | 2008-06-11 | 泉州市火炬电子元件厂 | 多层陶瓷电容器及其制造方法 |
| WO2009078225A1 (ja) * | 2007-12-14 | 2009-06-25 | Murata Manufacturing Co., Ltd. | 薄膜積層キャパシタの製造方法 |
| KR101090932B1 (ko) * | 2008-12-24 | 2011-12-08 | 매그나칩 반도체 유한회사 | 캐패시터 및 그의 제조방법 |
| JP5407775B2 (ja) * | 2009-03-31 | 2014-02-05 | Ｔｄｋ株式会社 | 薄膜コンデンサの製造方法及び薄膜コンデンサ |
| JP5234521B2 (ja) | 2009-08-21 | 2013-07-10 | Ｔｄｋ株式会社 | 電子部品及びその製造方法 |
| CN103098199B (zh) * | 2010-09-13 | 2014-12-10 | 株式会社村田制作所 | 电介质薄膜元件、反熔丝元件及电介质薄膜元件的制造方法 |
| JP2012164714A (ja) * | 2011-02-03 | 2012-08-30 | Rohm Co Ltd | 半導体装置の製造方法および半導体装置 |
| US9257498B1 (en) * | 2014-08-04 | 2016-02-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Process to improve performance for metal-insulator-metal (MIM) capacitors |
| JPWO2018003445A1 (ja) * | 2016-06-28 | 2019-03-07 | 株式会社村田製作所 | キャパシタ |
| US10468187B2 (en) * | 2016-08-05 | 2019-11-05 | Samsung Electro-Mechanics Co., Ltd. | Thin-film ceramic capacitor having capacitance forming portions separated by separation slit |
| KR102748948B1 (ko) * | 2016-08-26 | 2025-01-02 | 삼성전기주식회사 | 박막 커패시터 및 그 제조방법 |
| WO2019026641A1 (ja) * | 2017-07-31 | 2019-02-07 | 株式会社村田製作所 | 薄膜コンデンサ及びその製造方法 |
| JP7067616B2 (ja) * | 2018-04-18 | 2022-05-16 | 株式会社村田製作所 | キャパシタおよびその製造方法 |
| JP7156369B2 (ja) * | 2018-04-27 | 2022-10-19 | 株式会社村田製作所 | キャパシタ集合体 |
| US10615249B2 (en) * | 2018-07-19 | 2020-04-07 | Vanguard International Semiconductor Corporation | Capacitor structures and methods for fabricating the same |
| US11410921B2 (en) * | 2018-08-21 | 2022-08-09 | Intel Corporation | Methods to incorporate thin film capacitor sheets (TFC-S) in the build-up films |
| US11171199B2 (en) * | 2019-08-23 | 2021-11-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal-insulator-metal capacitors with high breakdown voltage |
-
2021
- 2021-01-19 JP JP2021572745A patent/JP7363928B2/ja active Active
- 2021-01-19 CN CN202180009644.5A patent/CN114981904B/zh active Active
- 2021-01-19 WO PCT/JP2021/001714 patent/WO2021149688A1/ja not_active Ceased
-
2022
- 2022-07-07 US US17/859,128 patent/US12424389B2/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0547586A (ja) * | 1991-08-16 | 1993-02-26 | Toshiba Corp | コンデンサ部品 |
| JP2005079513A (ja) * | 2003-09-03 | 2005-03-24 | Seiko Epson Corp | 半導体装置及びその製造方法 |
| JP2005191182A (ja) * | 2003-12-25 | 2005-07-14 | Nec Electronics Corp | 半導体装置及びその製造方法 |
| JP2008153497A (ja) * | 2006-12-19 | 2008-07-03 | Murata Mfg Co Ltd | 誘電体薄膜キャパシタの製造方法 |
| JP2016219588A (ja) * | 2015-05-20 | 2016-12-22 | イビデン株式会社 | 薄膜キャパシタ |
| US9761655B1 (en) * | 2016-06-20 | 2017-09-12 | International Business Machines Corporation | Stacked planar capacitors with scaled EOT |
| WO2019026771A1 (ja) * | 2017-07-31 | 2019-02-07 | 株式会社村田製作所 | キャパシタ |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021149688A1 (ja) | 2021-07-29 |
| US12424389B2 (en) | 2025-09-23 |
| CN114981904B (zh) | 2024-07-05 |
| US20220336155A1 (en) | 2022-10-20 |
| CN114981904A (zh) | 2022-08-30 |
| JP7363928B2 (ja) | 2023-10-18 |
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