CN114981904B - 半导体装置以及电容装置 - Google Patents

半导体装置以及电容装置 Download PDF

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Publication number
CN114981904B
CN114981904B CN202180009644.5A CN202180009644A CN114981904B CN 114981904 B CN114981904 B CN 114981904B CN 202180009644 A CN202180009644 A CN 202180009644A CN 114981904 B CN114981904 B CN 114981904B
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China
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layer
dielectric layer
electrode
thickness direction
dimension
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CN202180009644.5A
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English (en)
Chinese (zh)
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CN114981904A (zh
Inventor
香川武史
原田真臣
松原弘
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/10—Metal-oxide dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1254—Ceramic dielectrics characterised by the ceramic dielectric material based on niobium or tungsteen, tantalum oxides or niobates, tantalates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1272—Semiconductive ceramic capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/20—Dielectrics using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H01G4/252—Terminals the terminals being coated on the capacitive element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H01G4/306—Stacked capacitors made by thin film techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN202180009644.5A 2020-01-20 2021-01-19 半导体装置以及电容装置 Active CN114981904B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-006848 2020-01-20
JP2020006848 2020-01-20
PCT/JP2021/001714 WO2021149688A1 (ja) 2020-01-20 2021-01-19 半導体装置及び容量装置

Publications (2)

Publication Number Publication Date
CN114981904A CN114981904A (zh) 2022-08-30
CN114981904B true CN114981904B (zh) 2024-07-05

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180009644.5A Active CN114981904B (zh) 2020-01-20 2021-01-19 半导体装置以及电容装置

Country Status (4)

Country Link
US (1) US12424389B2 (https=)
JP (1) JP7363928B2 (https=)
CN (1) CN114981904B (https=)
WO (1) WO2021149688A1 (https=)

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* Cited by examiner, † Cited by third party
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KR102642386B1 (ko) * 2020-06-29 2024-02-29 티디케이가부시기가이샤 박막 캐패시터 및 그 제조 방법 및 박막 캐패시터를 구비하는 전자 회로 기판
WO2024014351A1 (ja) * 2022-07-13 2024-01-18 株式会社村田製作所 キャパシタ
TWI860794B (zh) * 2023-07-26 2024-11-01 欣興電子股份有限公司 電容元件、包含其的線路載板及其製作方法

Citations (2)

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JP2005191182A (ja) * 2003-12-25 2005-07-14 Nec Electronics Corp 半導体装置及びその製造方法
US9761655B1 (en) * 2016-06-20 2017-09-12 International Business Machines Corporation Stacked planar capacitors with scaled EOT

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US6885081B2 (en) * 2000-11-13 2005-04-26 Sharp Kabushiki Kaisha Semiconductor capacitor device having reduced voltage dependence
US20030011043A1 (en) * 2001-07-14 2003-01-16 Roberts Douglas R. MIM capacitor structure and process for making the same
JP2005079513A (ja) * 2003-09-03 2005-03-24 Seiko Epson Corp 半導体装置及びその製造方法
US7078785B2 (en) * 2003-09-23 2006-07-18 Freescale Semiconductor, Inc. Semiconductor device and making thereof
CN101197210A (zh) * 2006-12-05 2008-06-11 泉州市火炬电子元件厂 多层陶瓷电容器及其制造方法
JP2008153497A (ja) * 2006-12-19 2008-07-03 Murata Mfg Co Ltd 誘電体薄膜キャパシタの製造方法
WO2009078225A1 (ja) * 2007-12-14 2009-06-25 Murata Manufacturing Co., Ltd. 薄膜積層キャパシタの製造方法
KR101090932B1 (ko) * 2008-12-24 2011-12-08 매그나칩 반도체 유한회사 캐패시터 및 그의 제조방법
JP5407775B2 (ja) * 2009-03-31 2014-02-05 Ｔｄｋ株式会社 薄膜コンデンサの製造方法及び薄膜コンデンサ
JP5234521B2 (ja) 2009-08-21 2013-07-10 Ｔｄｋ株式会社 電子部品及びその製造方法
CN103098199B (zh) * 2010-09-13 2014-12-10 株式会社村田制作所 电介质薄膜元件、反熔丝元件及电介质薄膜元件的制造方法
JP2012164714A (ja) * 2011-02-03 2012-08-30 Rohm Co Ltd 半導体装置の製造方法および半導体装置
US9257498B1 (en) * 2014-08-04 2016-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. Process to improve performance for metal-insulator-metal (MIM) capacitors
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WO2019026771A1 (ja) * 2017-07-31 2019-02-07 株式会社村田製作所 キャパシタ
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US9761655B1 (en) * 2016-06-20 2017-09-12 International Business Machines Corporation Stacked planar capacitors with scaled EOT

Also Published As

Publication number Publication date
WO2021149688A1 (ja) 2021-07-29
US12424389B2 (en) 2025-09-23
US20220336155A1 (en) 2022-10-20
CN114981904A (zh) 2022-08-30
JP7363928B2 (ja) 2023-10-18
JPWO2021149688A1 (https=) 2021-07-29

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