JP6788847B2 - キャパシタ - Google Patents
キャパシタ Download PDFInfo
- Publication number
- JP6788847B2 JP6788847B2 JP2018548611A JP2018548611A JP6788847B2 JP 6788847 B2 JP6788847 B2 JP 6788847B2 JP 2018548611 A JP2018548611 A JP 2018548611A JP 2018548611 A JP2018548611 A JP 2018548611A JP 6788847 B2 JP6788847 B2 JP 6788847B2
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- JP
- Japan
- Prior art keywords
- electrode
- lower electrode
- region
- capacitor
- upper electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000003990 capacitor Substances 0.000 title claims description 49
- 239000000758 substrate Substances 0.000 claims description 36
- 230000001681 protective effect Effects 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000007769 metal material Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- -1 or the like Substances 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/012—Form of non-self-supporting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/224—Housing; Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
Claims (4)
- 第1主面及び第2主面を有する基板と、
前記第1主面上に設けられた下部電極と、
前記下部電極上に設けられた誘電膜と、
前記誘電膜上に設けられた上部電極と
を備え、
前記上部電極は、前記第1主面の平面視において、矩形形状を有する第1領域と、前記第1領域の少なくとも1つの辺から突出した、少なくとも1つの第2領域とを有する、キャパシタ。 - 前記第2領域は、矩形形状を有する、請求項1に記載のキャパシタ。
- 前記上部電極は、前記第1主面の平面視において、前記下部電極の内側に位置する、請求項1又は2に記載のキャパシタ。
- 前記下部電極は、前記第1領域及び前記第2領域を有し、
前記上部電極は、前記第1主面の平面視において、前記第2領域の内側に位置する、請求項1又は2に記載のキャパシタ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016215106 | 2016-11-02 | ||
JP2016215106 | 2016-11-02 | ||
PCT/JP2017/037518 WO2018083973A1 (ja) | 2016-11-02 | 2017-10-17 | キャパシタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2018083973A1 JPWO2018083973A1 (ja) | 2019-09-19 |
JP6788847B2 true JP6788847B2 (ja) | 2020-11-25 |
Family
ID=62075844
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018548611A Active JP6788847B2 (ja) | 2016-11-02 | 2017-10-17 | キャパシタ |
Country Status (4)
Country | Link |
---|---|
US (1) | US11521800B2 (ja) |
JP (1) | JP6788847B2 (ja) |
CN (1) | CN109923630B (ja) |
WO (1) | WO2018083973A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6575736B2 (ja) * | 2017-07-25 | 2019-09-18 | 株式会社村田製作所 | キャパシタ |
JP7427966B2 (ja) * | 2020-01-16 | 2024-02-06 | Tdk株式会社 | 電子部品 |
JP7420230B2 (ja) | 2020-05-01 | 2024-01-23 | 株式会社村田製作所 | 半導体装置及びモジュール |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0689831A (ja) * | 1992-09-08 | 1994-03-29 | Toshiba Corp | 薄膜コンデンサ |
JPH06112429A (ja) * | 1992-09-29 | 1994-04-22 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
JPH0757969A (ja) * | 1993-08-20 | 1995-03-03 | Nippon Carbide Ind Co Inc | コンデンサの容量安定化方法 |
US5699224A (en) * | 1995-10-25 | 1997-12-16 | Rohm Co., Ltd. | Thick-film capacitor and chip-type composite electronic component utilizing the same |
EP0788164A1 (en) * | 1996-02-02 | 1997-08-06 | United Memories, Inc. | Memory cell configuration for increased capacitor area |
JP4641396B2 (ja) * | 2004-09-02 | 2011-03-02 | Okiセミコンダクタ株式会社 | 薄膜コンデンサとその製造方法 |
WO2006082817A1 (ja) * | 2005-02-04 | 2006-08-10 | Nec Corporation | キャパシタ及びそれを内蔵した配線基板 |
JP2007201158A (ja) * | 2006-01-26 | 2007-08-09 | Kyocera Corp | コンデンサ |
JP2008277425A (ja) * | 2007-04-26 | 2008-11-13 | Kyocera Corp | コンデンサ |
JP2009295683A (ja) * | 2008-06-03 | 2009-12-17 | Tdk Corp | チップ型電子部品 |
JP5348565B2 (ja) * | 2008-08-04 | 2013-11-20 | 株式会社村田製作所 | 誘電体薄膜キャパシタの製造方法、及び誘電体薄膜キャパシタ |
WO2012036017A1 (ja) * | 2010-09-13 | 2012-03-22 | 株式会社村田製作所 | 誘電体薄膜素子、アンチヒューズ素子及び誘電体薄膜素子の製造方法 |
JP6187196B2 (ja) * | 2013-11-29 | 2017-08-30 | 株式会社村田製作所 | コンデンサ素子、共振器装置、および、コンデンサ素子の製造方法 |
JP6357856B2 (ja) | 2014-05-12 | 2018-07-18 | Tdk株式会社 | 薄膜キャパシタ |
US20160293334A1 (en) * | 2015-03-31 | 2016-10-06 | Tdk Corporation | Thin film capacitor |
-
2017
- 2017-10-17 JP JP2018548611A patent/JP6788847B2/ja active Active
- 2017-10-17 WO PCT/JP2017/037518 patent/WO2018083973A1/ja active Application Filing
- 2017-10-17 CN CN201780066804.3A patent/CN109923630B/zh active Active
-
2019
- 2019-04-16 US US16/385,552 patent/US11521800B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN109923630A (zh) | 2019-06-21 |
US20190244761A1 (en) | 2019-08-08 |
US11521800B2 (en) | 2022-12-06 |
CN109923630B (zh) | 2023-04-28 |
JPWO2018083973A1 (ja) | 2019-09-19 |
WO2018083973A1 (ja) | 2018-05-11 |
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