JP2016086090A5 - - Google Patents
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- Publication number
- JP2016086090A5 JP2016086090A5 JP2014218267A JP2014218267A JP2016086090A5 JP 2016086090 A5 JP2016086090 A5 JP 2016086090A5 JP 2014218267 A JP2014218267 A JP 2014218267A JP 2014218267 A JP2014218267 A JP 2014218267A JP 2016086090 A5 JP2016086090 A5 JP 2016086090A5
- Authority
- JP
- Japan
- Prior art keywords
- voltage side
- wiring
- side wiring
- capacitor element
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 description 181
- 239000010410 layer Substances 0.000 description 176
- 239000004065 semiconductor Substances 0.000 description 141
- 239000011229 interlayer Substances 0.000 description 78
- 239000000758 substrate Substances 0.000 description 52
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 34
- 229910052782 aluminium Inorganic materials 0.000 description 30
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 30
- 229920002120 photoresistant polymer Polymers 0.000 description 28
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 27
- 229910052802 copper Inorganic materials 0.000 description 27
- 239000010949 copper Substances 0.000 description 27
- 238000000034 method Methods 0.000 description 20
- 102100039922 E3 ISG15-protein ligase HERC5 Human genes 0.000 description 16
- 101001035145 Homo sapiens E3 ISG15-protein ligase HERC5 Proteins 0.000 description 16
- 101100495393 Rattus norvegicus Ceacam3 gene Proteins 0.000 description 15
- 102100027287 Serpin H1 Human genes 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 11
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 11
- 108010077333 CAP1-6D Proteins 0.000 description 8
- 102100029500 Prostasin Human genes 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 8
- 108010031970 prostasin Proteins 0.000 description 8
- 101000836383 Homo sapiens Serpin H1 Proteins 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 108010038679 colligin Proteins 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 101000897856 Homo sapiens Adenylyl cyclase-associated protein 2 Proteins 0.000 description 6
- 101000836079 Homo sapiens Serpin B8 Proteins 0.000 description 6
- 101000798702 Homo sapiens Transmembrane protease serine 4 Proteins 0.000 description 6
- 102100032471 Transmembrane protease serine 4 Human genes 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 230000002265 prevention Effects 0.000 description 4
- QJEJDNMGOWJONG-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,6,7,7-dodecafluoroheptyl prop-2-enoate Chemical compound FC(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)COC(=O)C=C QJEJDNMGOWJONG-UHFFFAOYSA-N 0.000 description 3
- UDVCHWOEHQSXMW-NSHDSACASA-N 5-bromo-n-[[(2s)-1-ethylpyrrolidin-2-yl]methyl]-2-hydroxy-3-methoxybenzamide Chemical compound CCN1CCC[C@H]1CNC(=O)C1=CC(Br)=CC(OC)=C1O UDVCHWOEHQSXMW-NSHDSACASA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- RAEOEMDZDMCHJA-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-[2-[2-[bis(carboxymethyl)amino]ethyl-(carboxymethyl)amino]ethyl]amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CCN(CC(O)=O)CC(O)=O)CC(O)=O RAEOEMDZDMCHJA-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014218267A JP2016086090A (ja) | 2014-10-27 | 2014-10-27 | 半導体装置 |
| US14/872,275 US20160118343A1 (en) | 2014-10-27 | 2015-10-01 | Semiconductor device |
| CN201510706539.3A CN105552060A (zh) | 2014-10-27 | 2015-10-27 | 半导体器件 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014218267A JP2016086090A (ja) | 2014-10-27 | 2014-10-27 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016086090A JP2016086090A (ja) | 2016-05-19 |
| JP2016086090A5 true JP2016086090A5 (https=) | 2017-07-13 |
Family
ID=55792591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014218267A Pending JP2016086090A (ja) | 2014-10-27 | 2014-10-27 | 半導体装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20160118343A1 (https=) |
| JP (1) | JP2016086090A (https=) |
| CN (1) | CN105552060A (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9947680B2 (en) * | 2016-09-16 | 2018-04-17 | Toshiba Memory Corporation | Semiconductor memory device |
| US11152458B2 (en) * | 2020-02-07 | 2021-10-19 | Macronix International Co., Ltd. | Metal capacitor |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW541646B (en) * | 2002-07-11 | 2003-07-11 | Acer Labs Inc | Polar integrated capacitor and method of making same |
| JP4371799B2 (ja) * | 2003-12-19 | 2009-11-25 | 株式会社リコー | 容量素子 |
| WO2005062355A1 (en) * | 2003-12-23 | 2005-07-07 | Telefonaktiebolaget Lm Ericsson (Publ) | Capacitor |
| US7022581B2 (en) * | 2004-07-08 | 2006-04-04 | Agere Systems Inc. | Interdigitaded capacitors |
| JP4615962B2 (ja) * | 2004-10-22 | 2011-01-19 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US20100177457A1 (en) * | 2009-01-10 | 2010-07-15 | Simon Edward Willard | Interdigital capacitor with Self-Canceling Inductance |
| JP5569354B2 (ja) * | 2010-11-17 | 2014-08-13 | 富士通セミコンダクター株式会社 | キャパシタおよび半導体装置 |
| TWI440060B (zh) * | 2011-12-07 | 2014-06-01 | 威盛電子股份有限公司 | 電容結構 |
-
2014
- 2014-10-27 JP JP2014218267A patent/JP2016086090A/ja active Pending
-
2015
- 2015-10-01 US US14/872,275 patent/US20160118343A1/en not_active Abandoned
- 2015-10-27 CN CN201510706539.3A patent/CN105552060A/zh active Pending
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