JP2016086090A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2016086090A
JP2016086090A JP2014218267A JP2014218267A JP2016086090A JP 2016086090 A JP2016086090 A JP 2016086090A JP 2014218267 A JP2014218267 A JP 2014218267A JP 2014218267 A JP2014218267 A JP 2014218267A JP 2016086090 A JP2016086090 A JP 2016086090A
Authority
JP
Japan
Prior art keywords
wiring
voltage side
side wiring
semiconductor device
extending
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014218267A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016086090A5 (https=
Inventor
常峰　美和
Yoshikazu Tokimine
美和 常峰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2014218267A priority Critical patent/JP2016086090A/ja
Priority to US14/872,275 priority patent/US20160118343A1/en
Priority to CN201510706539.3A priority patent/CN105552060A/zh
Publication of JP2016086090A publication Critical patent/JP2016086090A/ja
Publication of JP2016086090A5 publication Critical patent/JP2016086090A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/435—Cross-sectional shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
JP2014218267A 2014-10-27 2014-10-27 半導体装置 Pending JP2016086090A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014218267A JP2016086090A (ja) 2014-10-27 2014-10-27 半導体装置
US14/872,275 US20160118343A1 (en) 2014-10-27 2015-10-01 Semiconductor device
CN201510706539.3A CN105552060A (zh) 2014-10-27 2015-10-27 半导体器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014218267A JP2016086090A (ja) 2014-10-27 2014-10-27 半導体装置

Publications (2)

Publication Number Publication Date
JP2016086090A true JP2016086090A (ja) 2016-05-19
JP2016086090A5 JP2016086090A5 (https=) 2017-07-13

Family

ID=55792591

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014218267A Pending JP2016086090A (ja) 2014-10-27 2014-10-27 半導体装置

Country Status (3)

Country Link
US (1) US20160118343A1 (https=)
JP (1) JP2016086090A (https=)
CN (1) CN105552060A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9947680B2 (en) * 2016-09-16 2018-04-17 Toshiba Memory Corporation Semiconductor memory device
US11152458B2 (en) * 2020-02-07 2021-10-19 Macronix International Co., Ltd. Metal capacitor

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005183739A (ja) * 2003-12-19 2005-07-07 Ricoh Co Ltd 容量素子
US20060006496A1 (en) * 2004-07-08 2006-01-12 Harris Edward B Interdigitaded capacitors
JP2006120883A (ja) * 2004-10-22 2006-05-11 Nec Electronics Corp 半導体装置
JP2012109376A (ja) * 2010-11-17 2012-06-07 Fujitsu Semiconductor Ltd キャパシタおよび半導体装置
US20130148258A1 (en) * 2011-12-07 2013-06-13 Via Technologies, Inc. Capacitor structure

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW541646B (en) * 2002-07-11 2003-07-11 Acer Labs Inc Polar integrated capacitor and method of making same
WO2005062355A1 (en) * 2003-12-23 2005-07-07 Telefonaktiebolaget Lm Ericsson (Publ) Capacitor
US20100177457A1 (en) * 2009-01-10 2010-07-15 Simon Edward Willard Interdigital capacitor with Self-Canceling Inductance

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005183739A (ja) * 2003-12-19 2005-07-07 Ricoh Co Ltd 容量素子
US20060006496A1 (en) * 2004-07-08 2006-01-12 Harris Edward B Interdigitaded capacitors
JP2006120883A (ja) * 2004-10-22 2006-05-11 Nec Electronics Corp 半導体装置
JP2012109376A (ja) * 2010-11-17 2012-06-07 Fujitsu Semiconductor Ltd キャパシタおよび半導体装置
US20130148258A1 (en) * 2011-12-07 2013-06-13 Via Technologies, Inc. Capacitor structure

Also Published As

Publication number Publication date
US20160118343A1 (en) 2016-04-28
CN105552060A (zh) 2016-05-04

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