CN105552060A - 半导体器件 - Google Patents

半导体器件 Download PDF

Info

Publication number
CN105552060A
CN105552060A CN201510706539.3A CN201510706539A CN105552060A CN 105552060 A CN105552060 A CN 105552060A CN 201510706539 A CN201510706539 A CN 201510706539A CN 105552060 A CN105552060 A CN 105552060A
Authority
CN
China
Prior art keywords
wiring
capacitive element
extension
dielectric
voltage side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510706539.3A
Other languages
English (en)
Chinese (zh)
Inventor
常峰美和
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of CN105552060A publication Critical patent/CN105552060A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/435—Cross-sectional shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
CN201510706539.3A 2014-10-27 2015-10-27 半导体器件 Pending CN105552060A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014218267A JP2016086090A (ja) 2014-10-27 2014-10-27 半導体装置
JP2014-218267 2014-10-27

Publications (1)

Publication Number Publication Date
CN105552060A true CN105552060A (zh) 2016-05-04

Family

ID=55792591

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510706539.3A Pending CN105552060A (zh) 2014-10-27 2015-10-27 半导体器件

Country Status (3)

Country Link
US (1) US20160118343A1 (https=)
JP (1) JP2016086090A (https=)
CN (1) CN105552060A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9947680B2 (en) * 2016-09-16 2018-04-17 Toshiba Memory Corporation Semiconductor memory device
US11152458B2 (en) * 2020-02-07 2021-10-19 Macronix International Co., Ltd. Metal capacitor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060006496A1 (en) * 2004-07-08 2006-01-12 Harris Edward B Interdigitaded capacitors
CN1886833A (zh) * 2003-12-23 2006-12-27 艾利森电话股份有限公司 电容器
US20100177457A1 (en) * 2009-01-10 2010-07-15 Simon Edward Willard Interdigital capacitor with Self-Canceling Inductance

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW541646B (en) * 2002-07-11 2003-07-11 Acer Labs Inc Polar integrated capacitor and method of making same
JP4371799B2 (ja) * 2003-12-19 2009-11-25 株式会社リコー 容量素子
JP4615962B2 (ja) * 2004-10-22 2011-01-19 ルネサスエレクトロニクス株式会社 半導体装置
JP5569354B2 (ja) * 2010-11-17 2014-08-13 富士通セミコンダクター株式会社 キャパシタおよび半導体装置
TWI440060B (zh) * 2011-12-07 2014-06-01 威盛電子股份有限公司 電容結構

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1886833A (zh) * 2003-12-23 2006-12-27 艾利森电话股份有限公司 电容器
US20060006496A1 (en) * 2004-07-08 2006-01-12 Harris Edward B Interdigitaded capacitors
US20100177457A1 (en) * 2009-01-10 2010-07-15 Simon Edward Willard Interdigital capacitor with Self-Canceling Inductance

Also Published As

Publication number Publication date
US20160118343A1 (en) 2016-04-28
JP2016086090A (ja) 2016-05-19

Similar Documents

Publication Publication Date Title
CN100485933C (zh) 半导体器件
US8618634B2 (en) Semiconductor device manufacturing method and semiconductor device
KR101172783B1 (ko) 용량 소자 및 반도체 장치
US20100090308A1 (en) Metal-oxide-metal capacitors with bar vias
KR102748842B1 (ko) 반도체 장치 및 그 제조 방법
KR20070074441A (ko) 집적 회로를 위한 개선된 서로 맞물린 용량성 구조
CN100499106C (zh) 半导体器件
KR20130130932A (ko) 커패시터 및 그 형성 방법
JP5493166B2 (ja) 半導体装置及びその製造方法
CN111430328B (zh) 电容性半导体元件
US12495560B2 (en) Semiconductor device
CN105552060A (zh) 半导体器件
JP5592074B2 (ja) 半導体装置
US6864526B2 (en) Capacitor with via plugs forming first and second electrodes in a multilayer wiring structure of a semiconductor device
JP6710096B2 (ja) 半導体装置の製造方法、及び半導体装置
JP2016086090A5 (https=)
US20070267720A1 (en) Semiconductor device including capacitor connected between two conductive strip groups
JP2010135515A (ja) 半導体装置およびその製造方法
JP2008252044A (ja) Ｍｉｍ容量素子を備える半導体装置及びその製造方法
JP5863892B2 (ja) 半導体装置
JP2003124329A (ja) 容量素子
JP6831067B2 (ja) 容量性半導体素子
CN1979849A (zh) 电容结构
JP2011086701A (ja) 半導体装置およびその製造方法
JP2024011372A (ja) 半導体集積回路装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20160504

WD01 Invention patent application deemed withdrawn after publication