JPWO2024214501A1 - - Google Patents
Info
- Publication number
- JPWO2024214501A1 JPWO2024214501A1 JP2025513857A JP2025513857A JPWO2024214501A1 JP WO2024214501 A1 JPWO2024214501 A1 JP WO2024214501A1 JP 2025513857 A JP2025513857 A JP 2025513857A JP 2025513857 A JP2025513857 A JP 2025513857A JP WO2024214501 A1 JPWO2024214501 A1 JP WO2024214501A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023064654 | 2023-04-12 | ||
| PCT/JP2024/010727 WO2024214501A1 (ja) | 2023-04-12 | 2024-03-19 | 半導体装置及び電力変換装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024214501A1 true JPWO2024214501A1 (https=) | 2024-10-17 |
| JPWO2024214501A5 JPWO2024214501A5 (https=) | 2025-06-27 |
Family
ID=93059125
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025513857A Pending JPWO2024214501A1 (https=) | 2023-04-12 | 2024-03-19 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2024214501A1 (https=) |
| CN (1) | CN120958969A (https=) |
| WO (1) | WO2024214501A1 (https=) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2808871B2 (ja) * | 1990-09-17 | 1998-10-08 | 富士電機株式会社 | Ｍｏｓ型半導体素子の製造方法 |
| JP3532312B2 (ja) * | 1995-08-02 | 2004-05-31 | 株式会社ルネサステクノロジ | 半導体装置 |
| JP4627399B2 (ja) * | 2003-07-30 | 2011-02-09 | ルネサスエレクトロニクス株式会社 | 縦型電界効果トランジスタ及びその製造方法 |
| JP5098294B2 (ja) * | 2006-10-30 | 2012-12-12 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
| JP2009004676A (ja) * | 2007-06-25 | 2009-01-08 | Seiko Epson Corp | 半導体装置及びその製造方法 |
| JP2010010215A (ja) * | 2008-06-24 | 2010-01-14 | Oki Semiconductor Co Ltd | 半導体装置の製造方法 |
| JP5462020B2 (ja) * | 2009-06-09 | 2014-04-02 | 株式会社東芝 | 電力用半導体素子 |
| JP2017139292A (ja) * | 2016-02-02 | 2017-08-10 | 富士電機株式会社 | 半導体装置及びその製造方法 |
| DE112019002203B4 (de) * | 2018-04-27 | 2025-12-31 | Mitsubishi Electric Corporation | Halbleitereinheit und leistungswandler |
-
2024
- 2024-03-19 WO PCT/JP2024/010727 patent/WO2024214501A1/ja not_active Ceased
- 2024-03-19 JP JP2025513857A patent/JPWO2024214501A1/ja active Pending
- 2024-03-19 CN CN202480021354.6A patent/CN120958969A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024214501A1 (ja) | 2024-10-17 |
| CN120958969A (zh) | 2025-11-14 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250414 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250414 |