CN120958969A - 半导体装置以及电力转换装置 - Google Patents

半导体装置以及电力转换装置

Info

Publication number
CN120958969A
CN120958969A CN202480021354.6A CN202480021354A CN120958969A CN 120958969 A CN120958969 A CN 120958969A CN 202480021354 A CN202480021354 A CN 202480021354A CN 120958969 A CN120958969 A CN 120958969A
Authority
CN
China
Prior art keywords
insulating film
semiconductor device
electrode
interlayer insulating
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480021354.6A
Other languages
English (en)
Chinese (zh)
Inventor
中田和成
别府庆治
池田宗谦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN120958969A publication Critical patent/CN120958969A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN202480021354.6A 2023-04-12 2024-03-19 半导体装置以及电力转换装置 Pending CN120958969A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023-064654 2023-04-12
JP2023064654 2023-04-12
PCT/JP2024/010727 WO2024214501A1 (ja) 2023-04-12 2024-03-19 半導体装置及び電力変換装置

Publications (1)

Publication Number Publication Date
CN120958969A true CN120958969A (zh) 2025-11-14

Family

ID=93059125

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480021354.6A Pending CN120958969A (zh) 2023-04-12 2024-03-19 半导体装置以及电力转换装置

Country Status (3)

Country Link
JP (1) JPWO2024214501A1 (https=)
CN (1) CN120958969A (https=)
WO (1) WO2024214501A1 (https=)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2808871B2 (ja) * 1990-09-17 1998-10-08 富士電機株式会社 Ｍｏｓ型半導体素子の製造方法
JP3532312B2 (ja) * 1995-08-02 2004-05-31 株式会社ルネサステクノロジ 半導体装置
JP4627399B2 (ja) * 2003-07-30 2011-02-09 ルネサスエレクトロニクス株式会社 縦型電界効果トランジスタ及びその製造方法
JP5098294B2 (ja) * 2006-10-30 2012-12-12 株式会社デンソー 炭化珪素半導体装置の製造方法
JP2009004676A (ja) * 2007-06-25 2009-01-08 Seiko Epson Corp 半導体装置及びその製造方法
JP2010010215A (ja) * 2008-06-24 2010-01-14 Oki Semiconductor Co Ltd 半導体装置の製造方法
JP5462020B2 (ja) * 2009-06-09 2014-04-02 株式会社東芝 電力用半導体素子
JP2017139292A (ja) * 2016-02-02 2017-08-10 富士電機株式会社 半導体装置及びその製造方法
DE112019002203B4 (de) * 2018-04-27 2025-12-31 Mitsubishi Electric Corporation Halbleitereinheit und leistungswandler

Also Published As

Publication number Publication date
JPWO2024214501A1 (https=) 2024-10-17
WO2024214501A1 (ja) 2024-10-17

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