JPWO2024257633A5 - - Google Patents

Info

Publication number
JPWO2024257633A5
JPWO2024257633A5 JP2025527838A JP2025527838A JPWO2024257633A5 JP WO2024257633 A5 JPWO2024257633 A5 JP WO2024257633A5 JP 2025527838 A JP2025527838 A JP 2025527838A JP 2025527838 A JP2025527838 A JP 2025527838A JP WO2024257633 A5 JPWO2024257633 A5 JP WO2024257633A5
Authority
JP
Japan
Prior art keywords
semiconductor layer
semiconductor device
semiconductor
interface
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025527838A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024257633A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/020150 external-priority patent/WO2024257633A1/ja
Publication of JPWO2024257633A1 publication Critical patent/JPWO2024257633A1/ja
Publication of JPWO2024257633A5 publication Critical patent/JPWO2024257633A5/ja
Pending legal-status Critical Current

Links

JP2025527838A 2023-06-16 2024-06-03 Pending JPWO2024257633A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023098969 2023-06-16
PCT/JP2024/020150 WO2024257633A1 (ja) 2023-06-16 2024-06-03 半導体装置、電力変換装置、半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2024257633A1 JPWO2024257633A1 (https=) 2024-12-19
JPWO2024257633A5 true JPWO2024257633A5 (https=) 2025-09-04

Family

ID=93851887

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025527838A Pending JPWO2024257633A1 (https=) 2023-06-16 2024-06-03

Country Status (2)

Country Link
JP (1) JPWO2024257633A1 (https=)
WO (1) WO2024257633A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6012743B2 (ja) * 2012-09-06 2016-10-25 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
US10062759B2 (en) * 2013-03-29 2018-08-28 Hitachi, Ltd. Silicon carbide semiconductor device and method for manufacturing same
US10128370B2 (en) * 2014-10-01 2018-11-13 Mitsubishi Electric Corporation Semiconductor device
DE112018006456B4 (de) * 2017-12-19 2024-09-05 Mitsubishi Electric Corporation Siliciumcarbid-Halbleitereinheit und Leistungswandler

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