JPWO2023048122A5 - - Google Patents
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- Publication number
- JPWO2023048122A5 JPWO2023048122A5 JP2023549690A JP2023549690A JPWO2023048122A5 JP WO2023048122 A5 JPWO2023048122 A5 JP WO2023048122A5 JP 2023549690 A JP2023549690 A JP 2023549690A JP 2023549690 A JP2023549690 A JP 2023549690A JP WO2023048122 A5 JPWO2023048122 A5 JP WO2023048122A5
- Authority
- JP
- Japan
- Prior art keywords
- amorphous layer
- semiconductor substrate
- semiconductor
- layer
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 26
- 239000010410 layer Substances 0.000 claims 43
- 230000015556 catabolic process Effects 0.000 claims 3
- 239000011229 interlayer Substances 0.000 claims 3
- 238000006243 chemical reaction Methods 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021154055 | 2021-09-22 | ||
| PCT/JP2022/034929 WO2023048122A1 (ja) | 2021-09-22 | 2022-09-20 | 半導体装置および電力変換装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023048122A1 JPWO2023048122A1 (https=) | 2023-03-30 |
| JPWO2023048122A5 true JPWO2023048122A5 (https=) | 2023-12-11 |
Family
ID=85719506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023549690A Ceased JPWO2023048122A1 (https=) | 2021-09-22 | 2022-09-20 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240321986A1 (https=) |
| JP (1) | JPWO2023048122A1 (https=) |
| CN (1) | CN117941077A (https=) |
| DE (1) | DE112022004480T5 (https=) |
| WO (1) | WO2023048122A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20250234587A1 (en) * | 2024-01-12 | 2025-07-17 | Stmicroelectronics International N.V. | Self-aligned trench bottom protective region for a trench-gate metal-oxide-semiconductor field-effect transistor |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3691736B2 (ja) * | 2000-07-31 | 2005-09-07 | 新電元工業株式会社 | 半導体装置 |
| JP2012064656A (ja) * | 2010-09-14 | 2012-03-29 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JP7433611B2 (ja) * | 2016-04-28 | 2024-02-20 | 株式会社タムラ製作所 | トレンチｍｏｓ型ショットキーダイオード |
| US10804360B2 (en) * | 2017-04-14 | 2020-10-13 | Mitsubishi Electric Corporation | Silicon carbide semiconductor device, electric power conversion device, method for producing silicon carbide semiconductor device, and method for producing electric power conversion device |
| JP6664446B2 (ja) * | 2018-08-10 | 2020-03-13 | ローム株式会社 | ＳｉＣ半導体装置 |
| US20220102502A1 (en) | 2019-06-17 | 2022-03-31 | Rohm Co., Ltd. | SiC SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREFOR |
| JP7129397B2 (ja) | 2019-12-06 | 2022-09-01 | ローム株式会社 | ＳｉＣ半導体装置 |
-
2022
- 2022-09-20 US US18/577,041 patent/US20240321986A1/en active Pending
- 2022-09-20 WO PCT/JP2022/034929 patent/WO2023048122A1/ja not_active Ceased
- 2022-09-20 DE DE112022004480.2T patent/DE112022004480T5/de active Pending
- 2022-09-20 CN CN202280062340.XA patent/CN117941077A/zh not_active Withdrawn
- 2022-09-20 JP JP2023549690A patent/JPWO2023048122A1/ja not_active Ceased
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