JPWO2023048122A1 - - Google Patents

Info

Publication number
JPWO2023048122A1
JPWO2023048122A1 JP2023549690A JP2023549690A JPWO2023048122A1 JP WO2023048122 A1 JPWO2023048122 A1 JP WO2023048122A1 JP 2023549690 A JP2023549690 A JP 2023549690A JP 2023549690 A JP2023549690 A JP 2023549690A JP WO2023048122 A1 JPWO2023048122 A1 JP WO2023048122A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023549690A
Other versions
JPWO2023048122A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023048122A1 publication Critical patent/JPWO2023048122A1/ja
Publication of JPWO2023048122A5 publication Critical patent/JPWO2023048122A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2023549690A 2021-09-22 2022-09-20 Pending JPWO2023048122A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021154055 2021-09-22
PCT/JP2022/034929 WO2023048122A1 (ja) 2021-09-22 2022-09-20 半導体装置および電力変換装置

Publications (2)

Publication Number Publication Date
JPWO2023048122A1 true JPWO2023048122A1 (ja) 2023-03-30
JPWO2023048122A5 JPWO2023048122A5 (ja) 2023-12-11

Family

ID=85719506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023549690A Pending JPWO2023048122A1 (ja) 2021-09-22 2022-09-20

Country Status (3)

Country Link
JP (1) JPWO2023048122A1 (ja)
CN (1) CN117941077A (ja)
WO (1) WO2023048122A1 (ja)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3691736B2 (ja) * 2000-07-31 2005-09-07 新電元工業株式会社 半導体装置
JP2012064656A (ja) * 2010-09-14 2012-03-29 Mitsubishi Electric Corp 半導体装置の製造方法
JP7433611B2 (ja) * 2016-04-28 2024-02-20 株式会社タムラ製作所 トレンチｍｏｓ型ショットキーダイオード
US10804360B2 (en) * 2017-04-14 2020-10-13 Mitsubishi Electric Corporation Silicon carbide semiconductor device, electric power conversion device, method for producing silicon carbide semiconductor device, and method for producing electric power conversion device
JP6664446B2 (ja) * 2018-08-10 2020-03-13 ローム株式会社 ＳｉＣ半導体装置

Also Published As

Publication number Publication date
CN117941077A (zh) 2024-04-26
WO2023048122A1 (ja) 2023-03-30

Similar Documents

Publication Publication Date Title
BR112021014123A2 (ja)
BR102021018859A2 (ja)
BR102021015500A2 (ja)
BR102021007058A2 (ja)
JPWO2022230834A1 (ja)
BR102021020147A2 (ja)
BR102021018926A2 (ja)
BR102021018167A2 (ja)
BR102021017576A2 (ja)
BR102021016837A2 (ja)
BR102021016551A2 (ja)
BR102021016375A2 (ja)
BR102021016176A2 (ja)
BR102021016200A2 (ja)
BR102021015566A2 (ja)
BR102021015450A8 (ja)
BR102021015220A2 (ja)
BR102021015247A2 (ja)
JPWO2023007650A1 (ja)
BR102021014044A2 (ja)
BR102021014056A2 (ja)
BR102021013929A2 (ja)
BR112021017747A2 (ja)
BR102021012571A2 (ja)
BR102021012230A2 (ja)

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230913

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230913