JPWO2024028995A5 - - Google Patents

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Publication number
JPWO2024028995A5
JPWO2024028995A5 JP2024538581A JP2024538581A JPWO2024028995A5 JP WO2024028995 A5 JPWO2024028995 A5 JP WO2024028995A5 JP 2024538581 A JP2024538581 A JP 2024538581A JP 2024538581 A JP2024538581 A JP 2024538581A JP WO2024028995 A5 JPWO2024028995 A5 JP WO2024028995A5
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JP
Japan
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region
semiconductor device
surge current
drift layer
current carrying
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JP2024538581A
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English (en)
Japanese (ja)
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JPWO2024028995A1 (https=
JP7799844B2 (ja
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Priority claimed from PCT/JP2022/029727 external-priority patent/WO2024028995A1/ja
Publication of JPWO2024028995A1 publication Critical patent/JPWO2024028995A1/ja
Publication of JPWO2024028995A5 publication Critical patent/JPWO2024028995A5/ja
Application granted granted Critical
Publication of JP7799844B2 publication Critical patent/JP7799844B2/ja
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JP2024538581A 2022-08-03 2022-08-03 半導体装置および電力変換装置 Active JP7799844B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/029727 WO2024028995A1 (ja) 2022-08-03 2022-08-03 半導体装置および電力変換装置

Publications (3)

Publication Number Publication Date
JPWO2024028995A1 JPWO2024028995A1 (https=) 2024-02-08
JPWO2024028995A5 true JPWO2024028995A5 (https=) 2024-12-20
JP7799844B2 JP7799844B2 (ja) 2026-01-15

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ID=89848738

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024538581A Active JP7799844B2 (ja) 2022-08-03 2022-08-03 半導体装置および電力変換装置

Country Status (5)

Country Link
US (1) US20260006893A1 (https=)
JP (1) JP7799844B2 (https=)
CN (1) CN119631595A (https=)
DE (1) DE112022007612T5 (https=)
WO (1) WO2024028995A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024137537A (ja) * 2023-03-24 2024-10-07 株式会社東芝 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6001735B2 (ja) * 2011-07-27 2016-10-05 株式会社豊田中央研究所 Ｍｏｓｆｅｔ
US9583482B2 (en) * 2015-02-11 2017-02-28 Monolith Semiconductor Inc. High voltage semiconductor devices and methods of making the devices
JP7059556B2 (ja) * 2017-10-05 2022-04-26 富士電機株式会社 半導体装置
JP7175374B2 (ja) * 2019-02-22 2022-11-18 三菱電機株式会社 電力変換装置
JP7362546B2 (ja) * 2020-05-14 2023-10-17 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機

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