JPWO2023286235A5 - - Google Patents

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Publication number
JPWO2023286235A5
JPWO2023286235A5 JP2023534538A JP2023534538A JPWO2023286235A5 JP WO2023286235 A5 JPWO2023286235 A5 JP WO2023286235A5 JP 2023534538 A JP2023534538 A JP 2023534538A JP 2023534538 A JP2023534538 A JP 2023534538A JP WO2023286235 A5 JPWO2023286235 A5 JP WO2023286235A5
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JP
Japan
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silicon carbide
semiconductor device
region
pillar
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JP2023534538A
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English (en)
Japanese (ja)
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JPWO2023286235A1 (https=
JP7625086B2 (ja
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Priority claimed from PCT/JP2021/026592 external-priority patent/WO2023286235A1/ja
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Publication of JPWO2023286235A5 publication Critical patent/JPWO2023286235A5/ja
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Publication of JP7625086B2 publication Critical patent/JP7625086B2/ja
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JP2023534538A 2021-07-15 2021-07-15 炭化珪素半導体装置および電力変換装置 Active JP7625086B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/026592 WO2023286235A1 (ja) 2021-07-15 2021-07-15 炭化珪素半導体装置および電力変換装置

Publications (3)

Publication Number Publication Date
JPWO2023286235A1 JPWO2023286235A1 (https=) 2023-01-19
JPWO2023286235A5 true JPWO2023286235A5 (https=) 2023-09-25
JP7625086B2 JP7625086B2 (ja) 2025-01-31

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ID=84919774

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Application Number Title Priority Date Filing Date
JP2023534538A Active JP7625086B2 (ja) 2021-07-15 2021-07-15 炭化珪素半導体装置および電力変換装置

Country Status (5)

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US (1) US20240290830A1 (https=)
JP (1) JP7625086B2 (https=)
CN (1) CN117693822A (https=)
DE (1) DE112021007977T5 (https=)
WO (1) WO2023286235A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025158774A (ja) * 2024-04-05 2025-10-17 富士電機株式会社 半導体装置
CN120111920B (zh) * 2025-02-25 2026-04-17 中国科学院微电子研究所 一种抗辐射加固设计的四端子SiC MOSFET器件及其制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6377302U (https=) 1986-11-07 1988-05-23
JP3913564B2 (ja) * 2002-01-31 2007-05-09 富士電機ホールディングス株式会社 超接合半導体素子の製造方法
JP4166627B2 (ja) * 2003-05-30 2008-10-15 株式会社デンソー 半導体装置
JP5369372B2 (ja) * 2005-11-28 2013-12-18 富士電機株式会社 半導体装置および半導体装置の製造方法
JP4539680B2 (ja) * 2007-05-14 2010-09-08 株式会社デンソー 半導体装置およびその製造方法
US10243039B2 (en) * 2016-03-22 2019-03-26 General Electric Company Super-junction semiconductor power devices with fast switching capability

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