JP2023074722A5 - - Google Patents

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Publication number
JP2023074722A5
JP2023074722A5 JP2021187817A JP2021187817A JP2023074722A5 JP 2023074722 A5 JP2023074722 A5 JP 2023074722A5 JP 2021187817 A JP2021187817 A JP 2021187817A JP 2021187817 A JP2021187817 A JP 2021187817A JP 2023074722 A5 JP2023074722 A5 JP 2023074722A5
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Japan
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electrode
semiconductor layer
main surface
semiconductor
conductivity type
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JP2021187817A
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English (en)
Japanese (ja)
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JP2023074722A (ja
JP7682082B2 (ja
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Priority to JP2021187817A priority Critical patent/JP7682082B2/ja
Priority claimed from JP2021187817A external-priority patent/JP7682082B2/ja
Priority to US17/933,745 priority patent/US12136665B2/en
Priority to DE102022128620.7A priority patent/DE102022128620A1/de
Priority to CN202211412209.XA priority patent/CN116137291A/zh
Publication of JP2023074722A publication Critical patent/JP2023074722A/ja
Publication of JP2023074722A5 publication Critical patent/JP2023074722A5/ja
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JP2021187817A 2021-11-18 2021-11-18 半導体装置および電力変換装置 Active JP7682082B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2021187817A JP7682082B2 (ja) 2021-11-18 2021-11-18 半導体装置および電力変換装置
US17/933,745 US12136665B2 (en) 2021-11-18 2022-09-20 Semiconductor device and power conversion device
DE102022128620.7A DE102022128620A1 (de) 2021-11-18 2022-10-28 Halbleitervorrichtung und Leistungsumwandlungsvorrichtung
CN202211412209.XA CN116137291A (zh) 2021-11-18 2022-11-11 半导体装置及电力变换装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021187817A JP7682082B2 (ja) 2021-11-18 2021-11-18 半導体装置および電力変換装置

Publications (3)

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JP2023074722A JP2023074722A (ja) 2023-05-30
JP2023074722A5 true JP2023074722A5 (https=) 2023-12-11
JP7682082B2 JP7682082B2 (ja) 2025-05-23

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JP2021187817A Active JP7682082B2 (ja) 2021-11-18 2021-11-18 半導体装置および電力変換装置

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US (1) US12136665B2 (https=)
JP (1) JP7682082B2 (https=)
CN (1) CN116137291A (https=)
DE (1) DE102022128620A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116936611B (zh) * 2023-09-19 2023-12-08 中国海洋大学 一种低损耗双向导通igbt结构及制备方法
JP2025103460A (ja) * 2023-12-27 2025-07-09 ミネベアパワーデバイス株式会社 半導体装置および電力変換装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4506808B2 (ja) * 2007-10-15 2010-07-21 株式会社デンソー 半導体装置
JP4748149B2 (ja) * 2007-12-24 2011-08-17 株式会社デンソー 半導体装置
JP4877337B2 (ja) * 2009-02-17 2012-02-15 トヨタ自動車株式会社 半導体装置
JP5458595B2 (ja) * 2009-02-17 2014-04-02 トヨタ自動車株式会社 半導体装置、スイッチング装置、及び、半導体装置の制御方法。
US9337827B2 (en) * 2013-07-15 2016-05-10 Infineon Technologies Ag Electronic circuit with a reverse-conducting IGBT and gate driver circuit
JP6222702B2 (ja) * 2014-09-11 2017-11-01 株式会社東芝 半導体装置
US11355627B2 (en) * 2017-12-19 2022-06-07 Mitsubishi Electric Corporation Silicon carbide semiconductor device and power converter
CN111052393B (zh) * 2018-02-14 2023-11-14 富士电机株式会社 半导体装置
JP7055056B2 (ja) * 2018-04-24 2022-04-15 三菱電機株式会社 半導体装置および半導体装置の製造方法
WO2020157815A1 (ja) * 2019-01-29 2020-08-06 三菱電機株式会社 半導体装置および電力変換装置
JP2021082725A (ja) * 2019-11-20 2021-05-27 三菱電機株式会社 半導体装置
DE112020007266T5 (de) 2020-05-29 2023-03-09 Mitsubishi Electric Corporation Halbleitereinheit und Leistungswandler
DE112021007792T5 (de) * 2021-06-09 2024-04-18 Mitsubishi Electric Corporation Siliciumcarbid-halbleitereinrichtung

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