JP7682082B2 - 半導体装置および電力変換装置 - Google Patents

半導体装置および電力変換装置 Download PDF

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Publication number
JP7682082B2
JP7682082B2 JP2021187817A JP2021187817A JP7682082B2 JP 7682082 B2 JP7682082 B2 JP 7682082B2 JP 2021187817 A JP2021187817 A JP 2021187817A JP 2021187817 A JP2021187817 A JP 2021187817A JP 7682082 B2 JP7682082 B2 JP 7682082B2
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electrode
semiconductor layer
region
main surface
semiconductor
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Japanese (ja)
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JP2023074722A (ja
JP2023074722A5 (https=
Inventor
克己 佐藤
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2021187817A priority Critical patent/JP7682082B2/ja
Priority to US17/933,745 priority patent/US12136665B2/en
Priority to DE102022128620.7A priority patent/DE102022128620A1/de
Priority to CN202211412209.XA priority patent/CN116137291A/zh
Publication of JP2023074722A publication Critical patent/JP2023074722A/ja
Publication of JP2023074722A5 publication Critical patent/JP2023074722A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0009—Devices or circuits for detecting current in a converter
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H02M7/53871—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/539—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency
    • H02M7/5395—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency by pulse-width modulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/232—Emitter electrodes for IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2021187817A 2021-11-18 2021-11-18 半導体装置および電力変換装置 Active JP7682082B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2021187817A JP7682082B2 (ja) 2021-11-18 2021-11-18 半導体装置および電力変換装置
US17/933,745 US12136665B2 (en) 2021-11-18 2022-09-20 Semiconductor device and power conversion device
DE102022128620.7A DE102022128620A1 (de) 2021-11-18 2022-10-28 Halbleitervorrichtung und Leistungsumwandlungsvorrichtung
CN202211412209.XA CN116137291A (zh) 2021-11-18 2022-11-11 半导体装置及电力变换装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021187817A JP7682082B2 (ja) 2021-11-18 2021-11-18 半導体装置および電力変換装置

Publications (3)

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JP2023074722A JP2023074722A (ja) 2023-05-30
JP2023074722A5 JP2023074722A5 (https=) 2023-12-11
JP7682082B2 true JP7682082B2 (ja) 2025-05-23

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US (1) US12136665B2 (https=)
JP (1) JP7682082B2 (https=)
CN (1) CN116137291A (https=)
DE (1) DE102022128620A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116936611B (zh) * 2023-09-19 2023-12-08 中国海洋大学 一种低损耗双向导通igbt结构及制备方法
JP2025103460A (ja) * 2023-12-27 2025-07-09 ミネベアパワーデバイス株式会社 半導体装置および電力変換装置

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009099690A (ja) 2007-10-15 2009-05-07 Denso Corp 半導体装置
JP2009152506A (ja) 2007-12-24 2009-07-09 Denso Corp 半導体装置
JP2010192597A (ja) 2009-02-17 2010-09-02 Toyota Motor Corp 半導体装置、スイッチング装置、及び、半導体装置の制御方法。
JP2010192565A (ja) 2009-02-17 2010-09-02 Toyota Motor Corp 半導体装置
JP2015019370A (ja) 2013-07-15 2015-01-29 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 逆導通ｉｇｂｔおよびゲートドライバ回路を有する電子回路
JP2016058636A (ja) 2014-09-11 2016-04-21 株式会社東芝 半導体装置
JP2019192743A (ja) 2018-04-24 2019-10-31 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP2021082725A (ja) 2019-11-20 2021-05-27 三菱電機株式会社 半導体装置
JP6962511B1 (ja) 2020-05-29 2021-11-05 三菱電機株式会社 半導体装置、及び電力変換装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11355627B2 (en) * 2017-12-19 2022-06-07 Mitsubishi Electric Corporation Silicon carbide semiconductor device and power converter
CN111052393B (zh) * 2018-02-14 2023-11-14 富士电机株式会社 半导体装置
WO2020157815A1 (ja) * 2019-01-29 2020-08-06 三菱電機株式会社 半導体装置および電力変換装置
DE112021007792T5 (de) * 2021-06-09 2024-04-18 Mitsubishi Electric Corporation Siliciumcarbid-halbleitereinrichtung

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009099690A (ja) 2007-10-15 2009-05-07 Denso Corp 半導体装置
JP2009152506A (ja) 2007-12-24 2009-07-09 Denso Corp 半導体装置
JP2010192597A (ja) 2009-02-17 2010-09-02 Toyota Motor Corp 半導体装置、スイッチング装置、及び、半導体装置の制御方法。
JP2010192565A (ja) 2009-02-17 2010-09-02 Toyota Motor Corp 半導体装置
JP2015019370A (ja) 2013-07-15 2015-01-29 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 逆導通ｉｇｂｔおよびゲートドライバ回路を有する電子回路
JP2016058636A (ja) 2014-09-11 2016-04-21 株式会社東芝 半導体装置
JP2019192743A (ja) 2018-04-24 2019-10-31 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP2021082725A (ja) 2019-11-20 2021-05-27 三菱電機株式会社 半導体装置
JP6962511B1 (ja) 2020-05-29 2021-11-05 三菱電機株式会社 半導体装置、及び電力変換装置

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JP2023074722A (ja) 2023-05-30
DE102022128620A1 (de) 2023-05-25
CN116137291A (zh) 2023-05-19
US20230155015A1 (en) 2023-05-18
US12136665B2 (en) 2024-11-05

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