JP7625086B2 - 炭化珪素半導体装置および電力変換装置 - Google Patents

炭化珪素半導体装置および電力変換装置 Download PDF

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JP7625086B2
JP7625086B2 JP2023534538A JP2023534538A JP7625086B2 JP 7625086 B2 JP7625086 B2 JP 7625086B2 JP 2023534538 A JP2023534538 A JP 2023534538A JP 2023534538 A JP2023534538 A JP 2023534538A JP 7625086 B2 JP7625086 B2 JP 7625086B2
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regions
region
silicon carbide
pillar
mosfet
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Japanese (ja)
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JPWO2023286235A1 (https=
JPWO2023286235A5 (https=
Inventor
雄一 永久
貴亮 富永
裕 福井
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/051—Forming charge compensation regions, e.g. superjunctions
    • H10D62/058—Forming charge compensation regions, e.g. superjunctions by using trenches, e.g. implanting into sidewalls of trenches or refilling trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2023534538A 2021-07-15 2021-07-15 炭化珪素半導体装置および電力変換装置 Active JP7625086B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/026592 WO2023286235A1 (ja) 2021-07-15 2021-07-15 炭化珪素半導体装置および電力変換装置

Publications (3)

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JPWO2023286235A1 JPWO2023286235A1 (https=) 2023-01-19
JPWO2023286235A5 JPWO2023286235A5 (https=) 2023-09-25
JP7625086B2 true JP7625086B2 (ja) 2025-01-31

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JP2023534538A Active JP7625086B2 (ja) 2021-07-15 2021-07-15 炭化珪素半導体装置および電力変換装置

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US (1) US20240290830A1 (https=)
JP (1) JP7625086B2 (https=)
CN (1) CN117693822A (https=)
DE (1) DE112021007977T5 (https=)
WO (1) WO2023286235A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025158774A (ja) * 2024-04-05 2025-10-17 富士電機株式会社 半導体装置
CN120111920B (zh) * 2025-02-25 2026-04-17 中国科学院微电子研究所 一种抗辐射加固设计的四端子SiC MOSFET器件及其制造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003229569A (ja) 2002-01-31 2003-08-15 Fuji Electric Co Ltd 超接合半導体素子の製造方法
JP2004356577A (ja) 2003-05-30 2004-12-16 Denso Corp 半導体装置の製造方法および半導体基板ならびにそれらにより製造される半導体装置
JP2008159601A (ja) 2005-11-28 2008-07-10 Fuji Electric Device Technology Co Ltd 半導体装置および半導体装置の製造方法
JP2008283151A (ja) 2007-05-14 2008-11-20 Denso Corp 半導体装置およびその製造方法
JP2019510376A (ja) 2016-03-22 2019-04-11 ゼネラル・エレクトリック・カンパニイ 高速スイッチング機能を有する超接合パワー半導体デバイス

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6377302U (https=) 1986-11-07 1988-05-23

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003229569A (ja) 2002-01-31 2003-08-15 Fuji Electric Co Ltd 超接合半導体素子の製造方法
JP2004356577A (ja) 2003-05-30 2004-12-16 Denso Corp 半導体装置の製造方法および半導体基板ならびにそれらにより製造される半導体装置
JP2008159601A (ja) 2005-11-28 2008-07-10 Fuji Electric Device Technology Co Ltd 半導体装置および半導体装置の製造方法
JP2008283151A (ja) 2007-05-14 2008-11-20 Denso Corp 半導体装置およびその製造方法
JP2019510376A (ja) 2016-03-22 2019-04-11 ゼネラル・エレクトリック・カンパニイ 高速スイッチング機能を有する超接合パワー半導体デバイス

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DE112021007977T5 (de) 2024-05-02
JPWO2023286235A1 (https=) 2023-01-19
US20240290830A1 (en) 2024-08-29
CN117693822A (zh) 2024-03-12
WO2023286235A1 (ja) 2023-01-19

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