JPWO2023166657A5 - - Google Patents

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JPWO2023166657A5
JPWO2023166657A5 JP2022561541A JP2022561541A JPWO2023166657A5 JP WO2023166657 A5 JPWO2023166657 A5 JP WO2023166657A5 JP 2022561541 A JP2022561541 A JP 2022561541A JP 2022561541 A JP2022561541 A JP 2022561541A JP WO2023166657 A5 JPWO2023166657 A5 JP WO2023166657A5
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semiconductor
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JP2022561541A
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Japanese (ja)
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JP7337469B1 (ja
JPWO2023166657A1 (https=
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Priority claimed from PCT/JP2022/009114 external-priority patent/WO2023166657A1/ja
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JP2022561541A 2022-03-03 2022-03-03 半導体装置および電力変換装置 Active JP7337469B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/009114 WO2023166657A1 (ja) 2022-03-03 2022-03-03 半導体装置および電力変換装置

Publications (3)

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JP7337469B1 JP7337469B1 (ja) 2023-09-04
JPWO2023166657A1 JPWO2023166657A1 (https=) 2023-09-07
JPWO2023166657A5 true JPWO2023166657A5 (https=) 2024-02-06

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JP2022561541A Active JP7337469B1 (ja) 2022-03-03 2022-03-03 半導体装置および電力変換装置

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JP (1) JP7337469B1 (https=)
WO (1) WO2023166657A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7783598B2 (ja) * 2022-03-17 2025-12-10 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機
US20250241040A1 (en) * 2024-01-19 2025-07-24 Wolfspeed, Inc. Gate trench power semiconductor devices having deep trench shield connection patterns

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4738562B2 (ja) * 2000-03-15 2011-08-03 三菱電機株式会社 半導体装置の製造方法
JP2007134625A (ja) * 2005-11-14 2007-05-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2014003191A (ja) * 2012-06-20 2014-01-09 Hitachi Ltd 半導体装置
JP6715567B2 (ja) * 2014-12-16 2020-07-01 富士電機株式会社 半導体装置
DE102014119465B3 (de) * 2014-12-22 2016-05-25 Infineon Technologies Ag Halbleitervorrichtung mit streifenförmigen trenchgatestrukturen, transistormesas und diodenmesas
DE112017001788B4 (de) * 2016-03-30 2024-05-08 Mitsubishi Electric Corporation Halbleitereinheit, Verfahren zur Herstellung derselben und Leistungswandler
JP6848382B2 (ja) * 2016-11-16 2021-03-24 富士電機株式会社 半導体装置および半導体装置の製造方法
DE102017108738B4 (de) * 2017-04-24 2022-01-27 Infineon Technologies Ag SiC-HALBLEITERVORRICHTUNG MIT EINEM VERSATZ IN EINEM GRABENBODEN UND HERSTELLUNGSVERFAHREN HIERFÜR
DE112018002873T5 (de) * 2017-06-06 2020-02-27 Mitsubishi Electric Corporation Halbleitereinheit und leistungswandler
JP7029364B2 (ja) * 2018-08-20 2022-03-03 株式会社東芝 半導体装置
DE112019006587T5 (de) * 2019-01-08 2021-12-23 Mitsubishi Electric Corporation Halbleitereinheit und leistungswandlereinheit

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