JP7337469B1 - 半導体装置および電力変換装置 - Google Patents

半導体装置および電力変換装置 Download PDF

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JP7337469B1
JP7337469B1 JP2022561541A JP2022561541A JP7337469B1 JP 7337469 B1 JP7337469 B1 JP 7337469B1 JP 2022561541 A JP2022561541 A JP 2022561541A JP 2022561541 A JP2022561541 A JP 2022561541A JP 7337469 B1 JP7337469 B1 JP 7337469B1
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contact
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semiconductor layer
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JPWO2023166657A1 (https=
JPWO2023166657A5 (https=
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貴亮 富永
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Electrodes Of Semiconductors (AREA)
JP2022561541A 2022-03-03 2022-03-03 半導体装置および電力変換装置 Active JP7337469B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/009114 WO2023166657A1 (ja) 2022-03-03 2022-03-03 半導体装置および電力変換装置

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JP7337469B1 true JP7337469B1 (ja) 2023-09-04
JPWO2023166657A1 JPWO2023166657A1 (https=) 2023-09-07
JPWO2023166657A5 JPWO2023166657A5 (https=) 2024-02-06

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JP (1) JP7337469B1 (https=)
WO (1) WO2023166657A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025155431A1 (en) * 2024-01-19 2025-07-24 Wolfspeed, Inc. Gate trench power semiconductor devices having deep trench shield connection patterns

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7783598B2 (ja) * 2022-03-17 2025-12-10 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001267570A (ja) * 2000-03-15 2001-09-28 Mitsubishi Electric Corp 半導体装置及び半導体装置製造方法
JP2007134625A (ja) * 2005-11-14 2007-05-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2014003191A (ja) * 2012-06-20 2014-01-09 Hitachi Ltd 半導体装置
JP2016115847A (ja) * 2014-12-16 2016-06-23 富士電機株式会社 半導体装置
JP2016136618A (ja) * 2014-12-22 2016-07-28 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ ストライプ状トレンチゲート構造、トランジスタメサおよびダイオードメサを有する半導体素子
WO2017169086A1 (ja) * 2016-03-30 2017-10-05 三菱電機株式会社 半導体装置およびその製造方法、電力変換装置
JP2018082055A (ja) * 2016-11-16 2018-05-24 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2018186270A (ja) * 2017-04-24 2018-11-22 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ トレンチ下部にオフセットを有するＳｉＣ半導体デバイス
JP2020031088A (ja) * 2018-08-20 2020-02-27 株式会社東芝 半導体装置
WO2020145109A1 (ja) * 2019-01-08 2020-07-16 三菱電機株式会社 半導体装置及び電力変換装置
JP6753951B2 (ja) * 2017-06-06 2020-09-09 三菱電機株式会社 半導体装置および電力変換装置

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001267570A (ja) * 2000-03-15 2001-09-28 Mitsubishi Electric Corp 半導体装置及び半導体装置製造方法
JP2007134625A (ja) * 2005-11-14 2007-05-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2014003191A (ja) * 2012-06-20 2014-01-09 Hitachi Ltd 半導体装置
JP2016115847A (ja) * 2014-12-16 2016-06-23 富士電機株式会社 半導体装置
JP2016136618A (ja) * 2014-12-22 2016-07-28 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ ストライプ状トレンチゲート構造、トランジスタメサおよびダイオードメサを有する半導体素子
WO2017169086A1 (ja) * 2016-03-30 2017-10-05 三菱電機株式会社 半導体装置およびその製造方法、電力変換装置
JP2018082055A (ja) * 2016-11-16 2018-05-24 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2018186270A (ja) * 2017-04-24 2018-11-22 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ トレンチ下部にオフセットを有するＳｉＣ半導体デバイス
JP6753951B2 (ja) * 2017-06-06 2020-09-09 三菱電機株式会社 半導体装置および電力変換装置
JP2020031088A (ja) * 2018-08-20 2020-02-27 株式会社東芝 半導体装置
WO2020145109A1 (ja) * 2019-01-08 2020-07-16 三菱電機株式会社 半導体装置及び電力変換装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025155431A1 (en) * 2024-01-19 2025-07-24 Wolfspeed, Inc. Gate trench power semiconductor devices having deep trench shield connection patterns

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WO2023166657A1 (ja) 2023-09-07

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