JPWO2023166657A1 - - Google Patents
Info
- Publication number
- JPWO2023166657A1 JPWO2023166657A1 JP2022561541A JP2022561541A JPWO2023166657A1 JP WO2023166657 A1 JPWO2023166657 A1 JP WO2023166657A1 JP 2022561541 A JP2022561541 A JP 2022561541A JP 2022561541 A JP2022561541 A JP 2022561541A JP WO2023166657 A1 JPWO2023166657 A1 JP WO2023166657A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
- H10D62/107—Buried supplementary regions, e.g. buried guard rings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/009114 WO2023166657A1 (ja) | 2022-03-03 | 2022-03-03 | 半導体装置および電力変換装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP7337469B1 JP7337469B1 (ja) | 2023-09-04 |
| JPWO2023166657A1 true JPWO2023166657A1 (https=) | 2023-09-07 |
| JPWO2023166657A5 JPWO2023166657A5 (https=) | 2024-02-06 |
Family
ID=87882047
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022561541A Active JP7337469B1 (ja) | 2022-03-03 | 2022-03-03 | 半導体装置および電力変換装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7337469B1 (https=) |
| WO (1) | WO2023166657A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7783598B2 (ja) * | 2022-03-17 | 2025-12-10 | 株式会社東芝 | 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 |
| US20250241040A1 (en) * | 2024-01-19 | 2025-07-24 | Wolfspeed, Inc. | Gate trench power semiconductor devices having deep trench shield connection patterns |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4738562B2 (ja) * | 2000-03-15 | 2011-08-03 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JP2007134625A (ja) * | 2005-11-14 | 2007-05-31 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JP2014003191A (ja) * | 2012-06-20 | 2014-01-09 | Hitachi Ltd | 半導体装置 |
| JP6715567B2 (ja) * | 2014-12-16 | 2020-07-01 | 富士電機株式会社 | 半導体装置 |
| DE102014119465B3 (de) * | 2014-12-22 | 2016-05-25 | Infineon Technologies Ag | Halbleitervorrichtung mit streifenförmigen trenchgatestrukturen, transistormesas und diodenmesas |
| DE112017001788B4 (de) * | 2016-03-30 | 2024-05-08 | Mitsubishi Electric Corporation | Halbleitereinheit, Verfahren zur Herstellung derselben und Leistungswandler |
| JP6848382B2 (ja) * | 2016-11-16 | 2021-03-24 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| DE102017108738B4 (de) * | 2017-04-24 | 2022-01-27 | Infineon Technologies Ag | SiC-HALBLEITERVORRICHTUNG MIT EINEM VERSATZ IN EINEM GRABENBODEN UND HERSTELLUNGSVERFAHREN HIERFÜR |
| DE112018002873T5 (de) * | 2017-06-06 | 2020-02-27 | Mitsubishi Electric Corporation | Halbleitereinheit und leistungswandler |
| JP7029364B2 (ja) * | 2018-08-20 | 2022-03-03 | 株式会社東芝 | 半導体装置 |
| DE112019006587T5 (de) * | 2019-01-08 | 2021-12-23 | Mitsubishi Electric Corporation | Halbleitereinheit und leistungswandlereinheit |
-
2022
- 2022-03-03 JP JP2022561541A patent/JP7337469B1/ja active Active
- 2022-03-03 WO PCT/JP2022/009114 patent/WO2023166657A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| JP7337469B1 (ja) | 2023-09-04 |
| WO2023166657A1 (ja) | 2023-09-07 |
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