JPWO2024257633A1 - - Google Patents
Info
- Publication number
- JPWO2024257633A1 JPWO2024257633A1 JP2025527838A JP2025527838A JPWO2024257633A1 JP WO2024257633 A1 JPWO2024257633 A1 JP WO2024257633A1 JP 2025527838 A JP2025527838 A JP 2025527838A JP 2025527838 A JP2025527838 A JP 2025527838A JP WO2024257633 A1 JPWO2024257633 A1 JP WO2024257633A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023098969 | 2023-06-16 | ||
| PCT/JP2024/020150 WO2024257633A1 (ja) | 2023-06-16 | 2024-06-03 | 半導体装置、電力変換装置、半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024257633A1 true JPWO2024257633A1 (https=) | 2024-12-19 |
| JPWO2024257633A5 JPWO2024257633A5 (https=) | 2025-09-04 |
Family
ID=93851887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025527838A Pending JPWO2024257633A1 (https=) | 2023-06-16 | 2024-06-03 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2024257633A1 (https=) |
| WO (1) | WO2024257633A1 (https=) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6012743B2 (ja) * | 2012-09-06 | 2016-10-25 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
| US10062759B2 (en) * | 2013-03-29 | 2018-08-28 | Hitachi, Ltd. | Silicon carbide semiconductor device and method for manufacturing same |
| US10128370B2 (en) * | 2014-10-01 | 2018-11-13 | Mitsubishi Electric Corporation | Semiconductor device |
| DE112018006456B4 (de) * | 2017-12-19 | 2024-09-05 | Mitsubishi Electric Corporation | Siliciumcarbid-Halbleitereinheit und Leistungswandler |
-
2024
- 2024-06-03 JP JP2025527838A patent/JPWO2024257633A1/ja active Pending
- 2024-06-03 WO PCT/JP2024/020150 patent/WO2024257633A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024257633A1 (ja) | 2024-12-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250625 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250625 |