JPWO2023162929A5 - - Google Patents

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Publication number
JPWO2023162929A5
JPWO2023162929A5 JP2024503137A JP2024503137A JPWO2023162929A5 JP WO2023162929 A5 JPWO2023162929 A5 JP WO2023162929A5 JP 2024503137 A JP2024503137 A JP 2024503137A JP 2024503137 A JP2024503137 A JP 2024503137A JP WO2023162929 A5 JPWO2023162929 A5 JP WO2023162929A5
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JP
Japan
Prior art keywords
insulating film
ridge
semiconductor layer
semiconductor laser
laser device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024503137A
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English (en)
Japanese (ja)
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JPWO2023162929A1 (https=
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Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/006020 external-priority patent/WO2023162929A1/ja
Publication of JPWO2023162929A1 publication Critical patent/JPWO2023162929A1/ja
Publication of JPWO2023162929A5 publication Critical patent/JPWO2023162929A5/ja
Pending legal-status Critical Current

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JP2024503137A 2022-02-22 2023-02-20 Pending JPWO2023162929A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022025940 2022-02-22
PCT/JP2023/006020 WO2023162929A1 (ja) 2022-02-22 2023-02-20 半導体レーザ素子、及び半導体レーザ素子の製造方法

Publications (2)

Publication Number Publication Date
JPWO2023162929A1 JPWO2023162929A1 (https=) 2023-08-31
JPWO2023162929A5 true JPWO2023162929A5 (https=) 2024-10-25

Family

ID=87765811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024503137A Pending JPWO2023162929A1 (https=) 2022-02-22 2023-02-20

Country Status (3)

Country Link
JP (1) JPWO2023162929A1 (https=)
CN (1) CN118715679A (https=)
WO (1) WO2023162929A1 (https=)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261380A (ja) * 2000-12-27 2002-09-13 Furukawa Electric Co Ltd:The 半導体装置およびその製造方法
JP4383753B2 (ja) * 2003-02-19 2009-12-16 日亜化学工業株式会社 窒化物半導体素子の製造方法及び窒化物半導体素子
JP2006324427A (ja) * 2005-05-18 2006-11-30 Mitsubishi Electric Corp 半導体レーザ
JP2007311591A (ja) * 2006-05-19 2007-11-29 Matsushita Electric Ind Co Ltd 窒化物半導体レーザ装置及びその製造方法
JP2010021206A (ja) * 2008-07-08 2010-01-28 Panasonic Corp 半導体発光素子
DE102014105191B4 (de) * 2014-04-11 2019-09-19 Osram Opto Semiconductors Gmbh Halbleiter-Streifenlaser und Halbleiterbauteil
WO2020110783A1 (ja) * 2018-11-30 2020-06-04 パナソニックセミコンダクターソリューションズ株式会社 半導体レーザ装置
CN115039201B (zh) * 2020-02-06 2025-02-28 三菱电机株式会社 半导体装置及其制造方法

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