JP2021197437A5 - - Google Patents

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Publication number
JP2021197437A5
JP2021197437A5 JP2020102539A JP2020102539A JP2021197437A5 JP 2021197437 A5 JP2021197437 A5 JP 2021197437A5 JP 2020102539 A JP2020102539 A JP 2020102539A JP 2020102539 A JP2020102539 A JP 2020102539A JP 2021197437 A5 JP2021197437 A5 JP 2021197437A5
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JP
Japan
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layer
semiconductor
region
semiconductor layer
vertical cavity
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JP2020102539A
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English (en)
Japanese (ja)
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JP7523258B2 (ja
JP2021197437A (ja
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Priority to JP2020102539A priority Critical patent/JP7523258B2/ja
Priority claimed from JP2020102539A external-priority patent/JP7523258B2/ja
Priority to EP21178799.9A priority patent/EP3923426A1/en
Publication of JP2021197437A publication Critical patent/JP2021197437A/ja
Publication of JP2021197437A5 publication Critical patent/JP2021197437A5/ja
Priority to JP2024113268A priority patent/JP7665086B2/ja
Application granted granted Critical
Publication of JP7523258B2 publication Critical patent/JP7523258B2/ja
Priority to JP2025063752A priority patent/JP7828491B2/ja
Active legal-status Critical Current
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JP2020102539A 2020-06-12 2020-06-12 垂直共振器型発光素子 Active JP7523258B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2020102539A JP7523258B2 (ja) 2020-06-12 2020-06-12 垂直共振器型発光素子
EP21178799.9A EP3923426A1 (en) 2020-06-12 2021-06-10 Vertical cavity light-emitting element
JP2024113268A JP7665086B2 (ja) 2020-06-12 2024-07-16 垂直共振器型発光素子
JP2025063752A JP7828491B2 (ja) 2020-06-12 2025-04-08 垂直共振器型発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020102539A JP7523258B2 (ja) 2020-06-12 2020-06-12 垂直共振器型発光素子

Related Child Applications (1)

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JP2024113268A Division JP7665086B2 (ja) 2020-06-12 2024-07-16 垂直共振器型発光素子

Publications (3)

Publication Number Publication Date
JP2021197437A JP2021197437A (ja) 2021-12-27
JP2021197437A5 true JP2021197437A5 (https=) 2023-05-30
JP7523258B2 JP7523258B2 (ja) 2024-07-26

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ID=76392163

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2020102539A Active JP7523258B2 (ja) 2020-06-12 2020-06-12 垂直共振器型発光素子
JP2024113268A Active JP7665086B2 (ja) 2020-06-12 2024-07-16 垂直共振器型発光素子
JP2025063752A Active JP7828491B2 (ja) 2020-06-12 2025-04-08 垂直共振器型発光素子

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2024113268A Active JP7665086B2 (ja) 2020-06-12 2024-07-16 垂直共振器型発光素子
JP2025063752A Active JP7828491B2 (ja) 2020-06-12 2025-04-08 垂直共振器型発光素子

Country Status (2)

Country Link
EP (1) EP3923426A1 (https=)
JP (3) JP7523258B2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102022134465B4 (de) * 2022-01-01 2026-05-07 Canon Kabushiki Kaisha Halbleiterlichtemissionsbauelement, Lichtemissionsvorrichtung und Entfernungsmessvorrichtung
JP2024176675A (ja) * 2023-06-09 2024-12-19 スタンレー電気株式会社 垂直共振器型発光素子
JP2025044353A (ja) * 2023-09-20 2025-04-02 スタンレー電気株式会社 垂直共振器型発光素子及び発光装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06349886A (ja) * 1993-06-11 1994-12-22 Hitachi Ltd 半導体装置及びその製造方法
WO1998042030A1 (fr) * 1997-03-19 1998-09-24 Sharp Kabushiki Kaisha Element emetteur de lumiere semi-conducteur
JP2000058909A (ja) * 1998-08-06 2000-02-25 Toshiba Corp 半導体発光素子
JP2004079896A (ja) * 2002-08-21 2004-03-11 Matsushita Electric Ind Co Ltd 面発光レーザ装置
JP3795007B2 (ja) * 2002-11-27 2006-07-12 松下電器産業株式会社 半導体発光素子及びその製造方法
US20100327300A1 (en) * 2009-06-25 2010-12-30 Koninklijke Philips Electronics N.V. Contact for a semiconductor light emitting device
JP5707742B2 (ja) * 2009-06-30 2015-04-30 日亜化学工業株式会社 垂直共振器型面発光レーザ
CN102195234B (zh) * 2010-03-18 2012-12-26 大连理工大学 n型ZnO和p型GaN组合ZnO基垂直腔面发射激光器及制备方法
JP2012124321A (ja) * 2010-12-08 2012-06-28 Showa Denko Kk 半導体発光素子、ランプおよび半導体発光素子の製造方法
KR20140123257A (ko) * 2013-04-12 2014-10-22 일진엘이디(주) 질화물 반도체 발광 소자
US10530129B2 (en) * 2015-08-10 2020-01-07 Hewlett Packard Enterprise Development Lp Low impedance VCSELs
WO2017038448A1 (ja) * 2015-09-02 2017-03-09 ソニー株式会社 窒化物半導体素子
US9819152B2 (en) * 2015-10-07 2017-11-14 National Taiwan University Of Science And Technology Method to fabricate GaN-based vertical-cavity surface-emitting devices featuring silicon-diffusion defined current blocking layer
JP6723723B2 (ja) * 2015-10-22 2020-07-15 スタンレー電気株式会社 垂直共振器型発光素子及びその製造方法
JP6664688B2 (ja) 2015-11-19 2020-03-13 学校法人 名城大学 垂直共振器型発光素子
JP6737008B2 (ja) * 2016-06-30 2020-08-05 富士ゼロックス株式会社 光スイッチ
JP7005890B2 (ja) * 2016-10-14 2022-01-24 株式会社リコー 半導体発光素子、照明装置、ヘッドライト、移動体、イルミネーション装置、映像装置、投射型映像装置及びプロジェクター。
JP6966843B2 (ja) * 2017-02-08 2021-11-17 スタンレー電気株式会社 垂直共振器型発光素子
JP2019135748A (ja) * 2018-02-05 2019-08-15 住友電気工業株式会社 垂直共振型面発光レーザ
JP7212882B2 (ja) * 2018-05-24 2023-01-26 スタンレー電気株式会社 垂直共振器型発光素子
US12088059B2 (en) * 2018-10-12 2024-09-10 Sony Corporation Light emitting element
JP7166871B2 (ja) * 2018-10-18 2022-11-08 スタンレー電気株式会社 垂直共振器型発光素子
EP4089860B1 (en) * 2020-01-08 2025-02-26 Stanley Electric Co., Ltd. Vertical-resonator-type light-emitting element

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