JP7523258B2 - 垂直共振器型発光素子 - Google Patents

垂直共振器型発光素子 Download PDF

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Publication number
JP7523258B2
JP7523258B2 JP2020102539A JP2020102539A JP7523258B2 JP 7523258 B2 JP7523258 B2 JP 7523258B2 JP 2020102539 A JP2020102539 A JP 2020102539A JP 2020102539 A JP2020102539 A JP 2020102539A JP 7523258 B2 JP7523258 B2 JP 7523258B2
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layer
region
semiconductor layer
semiconductor
emitting device
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JP2020102539A
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Japanese (ja)
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JP2021197437A5 (https=
JP2021197437A (ja
Inventor
大 倉本
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Stanley Electric Co Ltd
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Stanley Electric Co Ltd
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Priority to JP2020102539A priority Critical patent/JP7523258B2/ja
Priority to EP21178799.9A priority patent/EP3923426A1/en
Publication of JP2021197437A publication Critical patent/JP2021197437A/ja
Publication of JP2021197437A5 publication Critical patent/JP2021197437A5/ja
Priority to JP2024113268A priority patent/JP7665086B2/ja
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Publication of JP7523258B2 publication Critical patent/JP7523258B2/ja
Priority to JP2025063752A priority patent/JP7828491B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/862—Resonant cavity structures

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2020102539A 2020-06-12 2020-06-12 垂直共振器型発光素子 Active JP7523258B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2020102539A JP7523258B2 (ja) 2020-06-12 2020-06-12 垂直共振器型発光素子
EP21178799.9A EP3923426A1 (en) 2020-06-12 2021-06-10 Vertical cavity light-emitting element
JP2024113268A JP7665086B2 (ja) 2020-06-12 2024-07-16 垂直共振器型発光素子
JP2025063752A JP7828491B2 (ja) 2020-06-12 2025-04-08 垂直共振器型発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020102539A JP7523258B2 (ja) 2020-06-12 2020-06-12 垂直共振器型発光素子

Related Child Applications (1)

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JP2024113268A Division JP7665086B2 (ja) 2020-06-12 2024-07-16 垂直共振器型発光素子

Publications (3)

Publication Number Publication Date
JP2021197437A JP2021197437A (ja) 2021-12-27
JP2021197437A5 JP2021197437A5 (https=) 2023-05-30
JP7523258B2 true JP7523258B2 (ja) 2024-07-26

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JP2020102539A Active JP7523258B2 (ja) 2020-06-12 2020-06-12 垂直共振器型発光素子
JP2024113268A Active JP7665086B2 (ja) 2020-06-12 2024-07-16 垂直共振器型発光素子
JP2025063752A Active JP7828491B2 (ja) 2020-06-12 2025-04-08 垂直共振器型発光素子

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JP2024113268A Active JP7665086B2 (ja) 2020-06-12 2024-07-16 垂直共振器型発光素子
JP2025063752A Active JP7828491B2 (ja) 2020-06-12 2025-04-08 垂直共振器型発光素子

Country Status (2)

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EP (1) EP3923426A1 (https=)
JP (3) JP7523258B2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102022134465B4 (de) * 2022-01-01 2026-05-07 Canon Kabushiki Kaisha Halbleiterlichtemissionsbauelement, Lichtemissionsvorrichtung und Entfernungsmessvorrichtung
JP2024176675A (ja) * 2023-06-09 2024-12-19 スタンレー電気株式会社 垂直共振器型発光素子
JP2025044353A (ja) * 2023-09-20 2025-04-02 スタンレー電気株式会社 垂直共振器型発光素子及び発光装置

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058909A (ja) 1998-08-06 2000-02-25 Toshiba Corp 半導体発光素子
JP2004079896A (ja) 2002-08-21 2004-03-11 Matsushita Electric Ind Co Ltd 面発光レーザ装置
JP2004179365A (ja) 2002-11-27 2004-06-24 Matsushita Electric Ind Co Ltd 半導体発光素子及びその製造方法
JP2012124321A (ja) 2010-12-08 2012-06-28 Showa Denko Kk 半導体発光素子、ランプおよび半導体発光素子の製造方法
JP2012531733A (ja) 2009-06-25 2012-12-10 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 半導体発光デバイスのための接点
WO2017038448A1 (ja) 2015-09-02 2017-03-09 ソニー株式会社 窒化物半導体素子
US20170104315A1 (en) 2015-10-07 2017-04-13 Ping-hui Yeh Method to fabricate GaN-based vertical-cavity surface-emitting devices featuring silicon-diffusion defined current blocking layer
JP2018129385A (ja) 2017-02-08 2018-08-16 スタンレー電気株式会社 垂直共振器型発光素子
JP2019135748A (ja) 2018-02-05 2019-08-15 住友電気工業株式会社 垂直共振型面発光レーザ
JP2020064994A (ja) 2018-10-18 2020-04-23 スタンレー電気株式会社 垂直共振器型発光素子
US20200127442A1 (en) 2015-08-10 2020-04-23 Hewlett Packard Enterprise Development Lp Low impedance vcsels

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06349886A (ja) * 1993-06-11 1994-12-22 Hitachi Ltd 半導体装置及びその製造方法
WO1998042030A1 (fr) * 1997-03-19 1998-09-24 Sharp Kabushiki Kaisha Element emetteur de lumiere semi-conducteur
JP5707742B2 (ja) * 2009-06-30 2015-04-30 日亜化学工業株式会社 垂直共振器型面発光レーザ
CN102195234B (zh) * 2010-03-18 2012-12-26 大连理工大学 n型ZnO和p型GaN组合ZnO基垂直腔面发射激光器及制备方法
KR20140123257A (ko) * 2013-04-12 2014-10-22 일진엘이디(주) 질화물 반도체 발광 소자
JP6723723B2 (ja) * 2015-10-22 2020-07-15 スタンレー電気株式会社 垂直共振器型発光素子及びその製造方法
JP6664688B2 (ja) 2015-11-19 2020-03-13 学校法人 名城大学 垂直共振器型発光素子
JP6737008B2 (ja) * 2016-06-30 2020-08-05 富士ゼロックス株式会社 光スイッチ
JP7005890B2 (ja) * 2016-10-14 2022-01-24 株式会社リコー 半導体発光素子、照明装置、ヘッドライト、移動体、イルミネーション装置、映像装置、投射型映像装置及びプロジェクター。
JP7212882B2 (ja) * 2018-05-24 2023-01-26 スタンレー電気株式会社 垂直共振器型発光素子
US12088059B2 (en) * 2018-10-12 2024-09-10 Sony Corporation Light emitting element
EP4089860B1 (en) * 2020-01-08 2025-02-26 Stanley Electric Co., Ltd. Vertical-resonator-type light-emitting element

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058909A (ja) 1998-08-06 2000-02-25 Toshiba Corp 半導体発光素子
JP2004079896A (ja) 2002-08-21 2004-03-11 Matsushita Electric Ind Co Ltd 面発光レーザ装置
JP2004179365A (ja) 2002-11-27 2004-06-24 Matsushita Electric Ind Co Ltd 半導体発光素子及びその製造方法
JP2012531733A (ja) 2009-06-25 2012-12-10 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 半導体発光デバイスのための接点
JP2012124321A (ja) 2010-12-08 2012-06-28 Showa Denko Kk 半導体発光素子、ランプおよび半導体発光素子の製造方法
US20200127442A1 (en) 2015-08-10 2020-04-23 Hewlett Packard Enterprise Development Lp Low impedance vcsels
WO2017038448A1 (ja) 2015-09-02 2017-03-09 ソニー株式会社 窒化物半導体素子
US20170104315A1 (en) 2015-10-07 2017-04-13 Ping-hui Yeh Method to fabricate GaN-based vertical-cavity surface-emitting devices featuring silicon-diffusion defined current blocking layer
JP2018129385A (ja) 2017-02-08 2018-08-16 スタンレー電気株式会社 垂直共振器型発光素子
JP2019135748A (ja) 2018-02-05 2019-08-15 住友電気工業株式会社 垂直共振型面発光レーザ
JP2020064994A (ja) 2018-10-18 2020-04-23 スタンレー電気株式会社 垂直共振器型発光素子

Also Published As

Publication number Publication date
JP2024138508A (ja) 2024-10-08
JP2025103008A (ja) 2025-07-08
JP7665086B2 (ja) 2025-04-18
JP7828491B2 (ja) 2026-03-11
JP2021197437A (ja) 2021-12-27
EP3923426A1 (en) 2021-12-15

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