JP2020064994A - 垂直共振器型発光素子 - Google Patents
垂直共振器型発光素子 Download PDFInfo
- Publication number
- JP2020064994A JP2020064994A JP2018196394A JP2018196394A JP2020064994A JP 2020064994 A JP2020064994 A JP 2020064994A JP 2018196394 A JP2018196394 A JP 2018196394A JP 2018196394 A JP2018196394 A JP 2018196394A JP 2020064994 A JP2020064994 A JP 2020064994A
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- semiconductor layer
- resistance region
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
- H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1071—Ring-lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
- H01S2301/166—Single transverse or lateral mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
15、21 p型半導体層
15C、21C 不活性化領域
Claims (5)
- 基板と、
前記基板上に形成された第1の多層膜反射鏡と、
前記第1の多層膜反射鏡上に形成され、第1の導電型を有する第1の半導体層と、
前記第1の半導体層上に形成された発光層と、
前記発光層上に形成され、前記第1の半導体層とは反対の第2の導電型を有し、上面に低抵抗領域と前記低抵抗領域の外側において前記低抵抗領域から前記発光層に向かって窪みかつ前記第2の導電型の不純物が不活性化されることで前記低抵抗領域よりも高い電気抵抗を有する高抵抗領域とを有する第2の半導体層と、
前記低抵抗領域及び前記高抵抗領域に接触して前記第2の半導体層の前記上面上に形成された透光電極層と、
前記透光電極層上に形成され、前記第1の多層膜反射鏡との間で共振器を構成する第2の多層膜反射鏡と、を有することを特徴とする垂直共振器型発光素子。 - 前記共振器は、前記低抵抗領域に対応して前記第1及び第2の多層膜反射鏡間に延びる中央領域と、前記中央領域の外側において前記高抵抗領域に対応して設けられた外側領域と、を有し、
前記外側領域は、前記中央領域よりも低い等価屈折率を有することを特徴とする請求項1に記載の垂直共振器型発光素子。 - 前記第2の半導体層は、前記上面の前記低抵抗領域の内側において前記低抵抗領域から前記発光層に向かって窪みかつ前記第2の導電型の不純物が不活性化されることで前記低抵抗領域よりも高い電気抵抗を有する高抵抗領域を有することを特徴とする請求項1に記載の垂直共振器型発光素子。
- 前記共振器は、前記低抵抗領域に対応して前記第1及び第2の多層膜反射鏡間に延びる環状領域と、前記環状領域の内側において前記高抵抗領域に対応して設けられた内側領域と、前記環状領域の外側において前記高抵抗領域に対応して設けられた外側領域と、を有し、
前記内側領域及び前記外側領域は、前記環状領域よりも低い等価屈折率を有することを特徴とする請求項3に記載の垂直共振器型発光素子。 - 前記高抵抗領域は、1.5〜12nmの範囲内の深さで前記低抵抗領域から前記発光層に向かって窪んでいることを特徴とする請求項1乃至4のいずれか1つに記載の垂直共振器型発光素子。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018196394A JP7166871B2 (ja) | 2018-10-18 | 2018-10-18 | 垂直共振器型発光素子 |
PCT/JP2019/039456 WO2020080161A1 (ja) | 2018-10-18 | 2019-10-07 | 垂直共振器型発光素子 |
EP19872622.6A EP3869642B1 (en) | 2018-10-18 | 2019-10-07 | Vertical resonator-type light-emitting element |
US17/285,635 US20210384706A1 (en) | 2018-10-18 | 2019-10-07 | Vertical cavity surface emitting device |
CN201980068567.3A CN112913093A (zh) | 2018-10-18 | 2019-10-07 | 垂直谐振器式发光元件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018196394A JP7166871B2 (ja) | 2018-10-18 | 2018-10-18 | 垂直共振器型発光素子 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2020064994A true JP2020064994A (ja) | 2020-04-23 |
JP2020064994A5 JP2020064994A5 (ja) | 2021-10-21 |
JP7166871B2 JP7166871B2 (ja) | 2022-11-08 |
Family
ID=70284329
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018196394A Active JP7166871B2 (ja) | 2018-10-18 | 2018-10-18 | 垂直共振器型発光素子 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20210384706A1 (ja) |
EP (1) | EP3869642B1 (ja) |
JP (1) | JP7166871B2 (ja) |
CN (1) | CN112913093A (ja) |
WO (1) | WO2020080161A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020123605A (ja) * | 2019-01-29 | 2020-08-13 | 日亜化学工業株式会社 | 垂直共振器面発光レーザ素子 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7190865B2 (ja) * | 2018-10-18 | 2022-12-16 | スタンレー電気株式会社 | 垂直共振器型発光素子 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000196189A (ja) * | 1998-12-24 | 2000-07-14 | Toshiba Corp | 面発光型半導体レーザ |
JP2003163373A (ja) * | 2001-11-26 | 2003-06-06 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
US6751245B1 (en) * | 1999-06-02 | 2004-06-15 | Optical Communication Products, Inc. | Single mode vertical cavity surface emitting laser |
JP2005197426A (ja) * | 2004-01-07 | 2005-07-21 | Yokogawa Electric Corp | 面発光レーザ |
JP2011205006A (ja) * | 2010-03-26 | 2011-10-13 | Furukawa Electric Co Ltd:The | 半導体レーザ素子およびその製造方法 |
JP2012517705A (ja) * | 2009-02-11 | 2012-08-02 | ダンマークス テクニスク ユニバーシテット | ハイブリッド垂直キャビティレーザー |
WO2017018017A1 (ja) * | 2015-07-28 | 2017-02-02 | ソニー株式会社 | 発光素子 |
WO2018083877A1 (ja) * | 2016-11-02 | 2018-05-11 | ソニー株式会社 | 発光素子及びその製造方法 |
JP6369613B1 (ja) * | 2017-09-21 | 2018-08-08 | 富士ゼロックス株式会社 | 発光部品、プリントヘッド及び画像形成装置 |
WO2018180450A1 (ja) * | 2017-03-27 | 2018-10-04 | 学校法人 名城大学 | 半導体多層膜反射鏡及び垂直共振器型発光素子 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53140883A (en) | 1977-05-16 | 1978-12-08 | Terumo Corp | Urinary output monitor |
US5058120A (en) * | 1990-02-28 | 1991-10-15 | Kabushiki Kaisha Toshiba | Visible light emitting semiconductor laser with inverse mesa-shaped groove section |
US5594751A (en) * | 1995-06-26 | 1997-01-14 | Optical Concepts, Inc. | Current-apertured vertical cavity laser |
KR100345452B1 (ko) * | 2000-12-14 | 2002-07-26 | 한국전자통신연구원 | 상부거울층 양단부에 확산영역을 구비하는 장파장표면방출 레이저 소자 및 그 제조 방법 |
US6546029B2 (en) * | 2001-03-15 | 2003-04-08 | Ecole Polytechnique Federale De Lausanne | Micro-electromechanically tunable vertical cavity photonic device and a method of fabrication thereof |
US6589805B2 (en) * | 2001-03-26 | 2003-07-08 | Gazillion Bits, Inc. | Current confinement structure for vertical cavity surface emitting laser |
US20040179566A1 (en) * | 2003-03-11 | 2004-09-16 | Aharon El-Bahar | Multi-color stacked semiconductor lasers |
US20070025407A1 (en) * | 2005-07-29 | 2007-02-01 | Koelle Bernhard U | Long-wavelength VCSEL system with heat sink |
JP4479804B2 (ja) * | 2008-02-13 | 2010-06-09 | 富士ゼロックス株式会社 | 面発光型半導体レーザ |
US8030666B2 (en) * | 2008-04-16 | 2011-10-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Group-III nitride epitaxial layer on silicon substrate |
JP5521478B2 (ja) * | 2008-10-22 | 2014-06-11 | 日亜化学工業株式会社 | 窒化物半導体発光素子の製造方法及び窒化物半導体発光素子 |
JP2010114214A (ja) * | 2008-11-05 | 2010-05-20 | Fuji Xerox Co Ltd | 面発光型半導体レーザ素子、面発光型半導体レーザ素子の製造方法、および光送信装置 |
DE112009003719T5 (de) * | 2008-12-10 | 2012-08-16 | Furukawa Electric Co., Ltd., | Halbleiterlaserelement und herstellungsverfahren dafür |
JP4934705B2 (ja) * | 2009-07-28 | 2012-05-16 | キヤノン株式会社 | 面発光レーザ、面発光レーザの製造方法、画像形成装置 |
JP5754624B2 (ja) * | 2010-05-25 | 2015-07-29 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置、画像形成装置及び面発光レーザ素子の製造方法 |
JP5633435B2 (ja) * | 2011-03-09 | 2014-12-03 | 日亜化学工業株式会社 | 面発光レーザ素子 |
JP6240429B2 (ja) * | 2013-08-07 | 2017-11-29 | 国立大学法人東京工業大学 | 面発光型半導体レーザおよび光伝送装置 |
US20170093128A1 (en) * | 2014-03-04 | 2017-03-30 | Hewlett Packard Enterprise Development Lp | Vertical-cavity surface-emitting lasers |
US11095096B2 (en) * | 2014-04-16 | 2021-08-17 | Yale University | Method for a GaN vertical microcavity surface emitting laser (VCSEL) |
JP6664688B2 (ja) * | 2015-11-19 | 2020-03-13 | 学校法人 名城大学 | 垂直共振器型発光素子 |
JP2018073853A (ja) * | 2016-10-24 | 2018-05-10 | スタンレー電気株式会社 | 反射鏡、垂直共振器型発光装置及びその製造方法 |
CN106848838B (zh) * | 2017-04-06 | 2019-11-29 | 中国科学院半导体研究所 | 基于多孔DBR的GaN基VCSEL芯片及制备方法 |
US10681474B2 (en) * | 2017-09-19 | 2020-06-09 | Vocalzoom Systems Ltd. | Laser-based devices utilizing improved self-mix sensing |
JP7039905B2 (ja) * | 2017-09-21 | 2022-03-23 | 富士フイルムビジネスイノベーション株式会社 | 発光部品の製造方法 |
JP7190865B2 (ja) * | 2018-10-18 | 2022-12-16 | スタンレー電気株式会社 | 垂直共振器型発光素子 |
-
2018
- 2018-10-18 JP JP2018196394A patent/JP7166871B2/ja active Active
-
2019
- 2019-10-07 EP EP19872622.6A patent/EP3869642B1/en active Active
- 2019-10-07 CN CN201980068567.3A patent/CN112913093A/zh active Pending
- 2019-10-07 US US17/285,635 patent/US20210384706A1/en active Pending
- 2019-10-07 WO PCT/JP2019/039456 patent/WO2020080161A1/ja unknown
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000196189A (ja) * | 1998-12-24 | 2000-07-14 | Toshiba Corp | 面発光型半導体レーザ |
US6751245B1 (en) * | 1999-06-02 | 2004-06-15 | Optical Communication Products, Inc. | Single mode vertical cavity surface emitting laser |
JP2003163373A (ja) * | 2001-11-26 | 2003-06-06 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
JP2005197426A (ja) * | 2004-01-07 | 2005-07-21 | Yokogawa Electric Corp | 面発光レーザ |
JP2012517705A (ja) * | 2009-02-11 | 2012-08-02 | ダンマークス テクニスク ユニバーシテット | ハイブリッド垂直キャビティレーザー |
JP2011205006A (ja) * | 2010-03-26 | 2011-10-13 | Furukawa Electric Co Ltd:The | 半導体レーザ素子およびその製造方法 |
WO2017018017A1 (ja) * | 2015-07-28 | 2017-02-02 | ソニー株式会社 | 発光素子 |
WO2018083877A1 (ja) * | 2016-11-02 | 2018-05-11 | ソニー株式会社 | 発光素子及びその製造方法 |
WO2018180450A1 (ja) * | 2017-03-27 | 2018-10-04 | 学校法人 名城大学 | 半導体多層膜反射鏡及び垂直共振器型発光素子 |
JP6369613B1 (ja) * | 2017-09-21 | 2018-08-08 | 富士ゼロックス株式会社 | 発光部品、プリントヘッド及び画像形成装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020123605A (ja) * | 2019-01-29 | 2020-08-13 | 日亜化学工業株式会社 | 垂直共振器面発光レーザ素子 |
JP7227469B2 (ja) | 2019-01-29 | 2023-02-22 | 日亜化学工業株式会社 | 垂直共振器面発光レーザ素子 |
Also Published As
Publication number | Publication date |
---|---|
EP3869642A1 (en) | 2021-08-25 |
US20210384706A1 (en) | 2021-12-09 |
EP3869642A4 (en) | 2022-07-20 |
WO2020080161A1 (ja) | 2020-04-23 |
CN112913093A (zh) | 2021-06-04 |
JP7166871B2 (ja) | 2022-11-08 |
EP3869642B1 (en) | 2024-03-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2020170818A1 (ja) | 垂直共振器型発光素子 | |
JP7212882B2 (ja) | 垂直共振器型発光素子 | |
JP5593700B2 (ja) | 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置 | |
JP7453489B2 (ja) | 波長変換装置及び発光装置 | |
JP5954469B1 (ja) | 面発光型半導体レーザ、面発光型半導体レーザアレイ、面発光型半導体レーザ装置、光伝送装置および情報処理装置 | |
WO2020080161A1 (ja) | 垂直共振器型発光素子 | |
WO2021140871A1 (ja) | 垂直共振器型発光素子 | |
WO2020080160A1 (ja) | 垂直共振器型発光素子 | |
US20220368107A1 (en) | Vertical cavity surface emitting device | |
JP2016213486A (ja) | 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置 | |
CN112913094B (zh) | 垂直谐振器式发光元件 | |
JP7406365B2 (ja) | 垂直共振器型発光素子 | |
US20220149595A1 (en) | Vertical cavity surface emitting device | |
JP2018186213A (ja) | 垂直共振器型発光素子 | |
JP2021197437A (ja) | 垂直共振器型発光素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210913 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210913 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20221004 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20221026 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7166871 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |