JPWO2023223859A5 - - Google Patents
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- Publication number
- JPWO2023223859A5 JPWO2023223859A5 JP2024521672A JP2024521672A JPWO2023223859A5 JP WO2023223859 A5 JPWO2023223859 A5 JP WO2023223859A5 JP 2024521672 A JP2024521672 A JP 2024521672A JP 2024521672 A JP2024521672 A JP 2024521672A JP WO2023223859 A5 JPWO2023223859 A5 JP WO2023223859A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- ridge
- light emitting
- semiconductor light
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 25
- 230000004888 barrier function Effects 0.000 claims 11
- 230000000903 blocking effect Effects 0.000 claims 6
- 229910000679 solder Inorganic materials 0.000 claims 2
- 229910008599 TiW Inorganic materials 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 230000007423 decrease Effects 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022082452 | 2022-05-19 | ||
| PCT/JP2023/017265 WO2023223859A1 (ja) | 2022-05-19 | 2023-05-08 | 半導体発光素子、及び半導体発光装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023223859A1 JPWO2023223859A1 (https=) | 2023-11-23 |
| JPWO2023223859A5 true JPWO2023223859A5 (https=) | 2025-01-30 |
Family
ID=88835192
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024521672A Pending JPWO2023223859A1 (https=) | 2022-05-19 | 2023-05-08 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2023223859A1 (https=) |
| WO (1) | WO2023223859A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025135006A1 (ja) * | 2023-12-19 | 2025-06-26 | ヌヴォトンテクノロジージャパン株式会社 | 窒化物半導体レーザ素子 |
| CN117878212B (zh) * | 2024-03-13 | 2024-06-21 | 山西中科潞安紫外光电科技有限公司 | 一种深紫外led倒装芯片及其制备方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4337520B2 (ja) * | 2002-11-25 | 2009-09-30 | 日亜化学工業株式会社 | リッジ導波路型半導体レーザ |
| JP5045336B2 (ja) * | 2007-04-16 | 2012-10-10 | 豊田合成株式会社 | 半導体発光素子 |
| JP4901909B2 (ja) * | 2009-05-19 | 2012-03-21 | シャープ株式会社 | 光学部品及びその製造方法 |
| WO2020110783A1 (ja) * | 2018-11-30 | 2020-06-04 | パナソニックセミコンダクターソリューションズ株式会社 | 半導体レーザ装置 |
| JP2022020503A (ja) * | 2020-07-20 | 2022-02-01 | ソニーグループ株式会社 | 半導体レーザおよび半導体レーザ装置 |
-
2023
- 2023-05-08 JP JP2024521672A patent/JPWO2023223859A1/ja active Pending
- 2023-05-08 WO PCT/JP2023/017265 patent/WO2023223859A1/ja not_active Ceased
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