JPWO2023223859A1 - - Google Patents
Info
- Publication number
- JPWO2023223859A1 JPWO2023223859A1 JP2024521672A JP2024521672A JPWO2023223859A1 JP WO2023223859 A1 JPWO2023223859 A1 JP WO2023223859A1 JP 2024521672 A JP2024521672 A JP 2024521672A JP 2024521672 A JP2024521672 A JP 2024521672A JP WO2023223859 A1 JPWO2023223859 A1 JP WO2023223859A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022082452 | 2022-05-19 | ||
| PCT/JP2023/017265 WO2023223859A1 (ja) | 2022-05-19 | 2023-05-08 | 半導体発光素子、及び半導体発光装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023223859A1 true JPWO2023223859A1 (https=) | 2023-11-23 |
| JPWO2023223859A5 JPWO2023223859A5 (https=) | 2025-01-30 |
Family
ID=88835192
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024521672A Pending JPWO2023223859A1 (https=) | 2022-05-19 | 2023-05-08 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2023223859A1 (https=) |
| WO (1) | WO2023223859A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025135006A1 (ja) * | 2023-12-19 | 2025-06-26 | ヌヴォトンテクノロジージャパン株式会社 | 窒化物半導体レーザ素子 |
| CN117878212B (zh) * | 2024-03-13 | 2024-06-21 | 山西中科潞安紫外光电科技有限公司 | 一种深紫外led倒装芯片及其制备方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4337520B2 (ja) * | 2002-11-25 | 2009-09-30 | 日亜化学工業株式会社 | リッジ導波路型半導体レーザ |
| JP5045336B2 (ja) * | 2007-04-16 | 2012-10-10 | 豊田合成株式会社 | 半導体発光素子 |
| JP4901909B2 (ja) * | 2009-05-19 | 2012-03-21 | シャープ株式会社 | 光学部品及びその製造方法 |
| WO2020110783A1 (ja) * | 2018-11-30 | 2020-06-04 | パナソニックセミコンダクターソリューションズ株式会社 | 半導体レーザ装置 |
| JP2022020503A (ja) * | 2020-07-20 | 2022-02-01 | ソニーグループ株式会社 | 半導体レーザおよび半導体レーザ装置 |
-
2023
- 2023-05-08 JP JP2024521672A patent/JPWO2023223859A1/ja active Pending
- 2023-05-08 WO PCT/JP2023/017265 patent/WO2023223859A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023223859A1 (ja) | 2023-11-23 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20241007 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20260423 |