JP5278960B2 - 半導体発光素子の製造方法 - Google Patents
半導体発光素子の製造方法 Download PDFInfo
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- JP5278960B2 JP5278960B2 JP2009163393A JP2009163393A JP5278960B2 JP 5278960 B2 JP5278960 B2 JP 5278960B2 JP 2009163393 A JP2009163393 A JP 2009163393A JP 2009163393 A JP2009163393 A JP 2009163393A JP 5278960 B2 JP5278960 B2 JP 5278960B2
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- layer
- electrode
- resist
- pad electrode
- light emitting
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- 239000004065 semiconductor Substances 0.000 title claims description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 41
- 239000002184 metal Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 24
- 230000001681 protective effect Effects 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 15
- 150000004767 nitrides Chemical class 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 229910052703 rhodium Inorganic materials 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000005253 cladding Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- -1 etc. Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Description
本発明に関連する参考例1による窒化物系半導体発光素子の作成においては、パッド電極がリフトオフ法によって形成される。
本発明に関連する参考例2においては、参考例1に比べて、窒化物系半導体発光素子のパッド電極がリフトオフ法ではなくてドライエッチング法で形成されることのみにおいて異なっている。すなわち、発光素子に含まれるパッド電極は、以下のようにドライエッチング法で形成することも可能である。
本発明の実施例1においては、参考例1および2に比べて、窒化物系半導体発光素子のパッド電極の形成方法が部分的に変更されたことのみにおいて異なっている。
Claims (1)
- n型半導体層とp型半導体層を形成する工程と、
前記n型半導体層と前記p型半導体層との少なくとも一方上に複数の金属層を含む電極を形成する工程を含み、前記電極に含まれる最上部以外の下部金属層がエッチング法によって形成され、前記最上部の金属層はその側面が順テーパ状になるようにリフトオフ法によって形成され、
前記電極の側面と上面の一部とを覆う保護膜を形成する工程をさらに含むことを特徴とする半導体発光素子の製造方法。
Priority Applications (1)
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JP2009163393A JP5278960B2 (ja) | 2009-07-10 | 2009-07-10 | 半導体発光素子の製造方法 |
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JP2009163393A JP5278960B2 (ja) | 2009-07-10 | 2009-07-10 | 半導体発光素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2011018819A JP2011018819A (ja) | 2011-01-27 |
JP5278960B2 true JP5278960B2 (ja) | 2013-09-04 |
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JP2009163393A Expired - Fee Related JP5278960B2 (ja) | 2009-07-10 | 2009-07-10 | 半導体発光素子の製造方法 |
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JP (1) | JP5278960B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6011108B2 (ja) * | 2011-09-27 | 2016-10-19 | 日亜化学工業株式会社 | 半導体素子 |
JP5945409B2 (ja) * | 2011-12-09 | 2016-07-05 | スタンレー電気株式会社 | 半導体素子とその製造方法 |
TWI614916B (zh) * | 2013-11-11 | 2018-02-11 | 晶元光電股份有限公司 | 光電元件及其製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004006498A (ja) * | 2002-05-31 | 2004-01-08 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
TWI243488B (en) * | 2003-02-26 | 2005-11-11 | Osram Opto Semiconductors Gmbh | Electrical contact-area for optoelectronic semiconductor-chip and its production method |
JP4367531B2 (ja) * | 2007-06-06 | 2009-11-18 | ソニー株式会社 | 発光素子における電極構造の形成方法、及び、積層構造体の形成方法 |
JP2009059970A (ja) * | 2007-08-31 | 2009-03-19 | Seiwa Electric Mfg Co Ltd | 半導体発光素子及び半導体発光素子の製造方法 |
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