JPWO2023162929A1 - - Google Patents

Info

Publication number
JPWO2023162929A1
JPWO2023162929A1 JP2024503137A JP2024503137A JPWO2023162929A1 JP WO2023162929 A1 JPWO2023162929 A1 JP WO2023162929A1 JP 2024503137 A JP2024503137 A JP 2024503137A JP 2024503137 A JP2024503137 A JP 2024503137A JP WO2023162929 A1 JPWO2023162929 A1 JP WO2023162929A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024503137A
Other languages
Japanese (ja)
Other versions
JPWO2023162929A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023162929A1 publication Critical patent/JPWO2023162929A1/ja
Publication of JPWO2023162929A5 publication Critical patent/JPWO2023162929A5/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2024503137A 2022-02-22 2023-02-20 Pending JPWO2023162929A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022025940 2022-02-22
PCT/JP2023/006020 WO2023162929A1 (ja) 2022-02-22 2023-02-20 半導体レーザ素子、及び半導体レーザ素子の製造方法

Publications (2)

Publication Number Publication Date
JPWO2023162929A1 true JPWO2023162929A1 (https=) 2023-08-31
JPWO2023162929A5 JPWO2023162929A5 (https=) 2024-10-25

Family

ID=87765811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024503137A Pending JPWO2023162929A1 (https=) 2022-02-22 2023-02-20

Country Status (3)

Country Link
JP (1) JPWO2023162929A1 (https=)
CN (1) CN118715679A (https=)
WO (1) WO2023162929A1 (https=)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261380A (ja) * 2000-12-27 2002-09-13 Furukawa Electric Co Ltd:The 半導体装置およびその製造方法
JP4383753B2 (ja) * 2003-02-19 2009-12-16 日亜化学工業株式会社 窒化物半導体素子の製造方法及び窒化物半導体素子
JP2006324427A (ja) * 2005-05-18 2006-11-30 Mitsubishi Electric Corp 半導体レーザ
JP2007311591A (ja) * 2006-05-19 2007-11-29 Matsushita Electric Ind Co Ltd 窒化物半導体レーザ装置及びその製造方法
JP2010021206A (ja) * 2008-07-08 2010-01-28 Panasonic Corp 半導体発光素子
DE102014105191B4 (de) * 2014-04-11 2019-09-19 Osram Opto Semiconductors Gmbh Halbleiter-Streifenlaser und Halbleiterbauteil
WO2020110783A1 (ja) * 2018-11-30 2020-06-04 パナソニックセミコンダクターソリューションズ株式会社 半導体レーザ装置
CN115039201B (zh) * 2020-02-06 2025-02-28 三菱电机株式会社 半导体装置及其制造方法

Also Published As

Publication number Publication date
CN118715679A (zh) 2024-09-27
WO2023162929A1 (ja) 2023-08-31

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Legal Events

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