CN118715679A - 半导体激光元件及半导体激光元件的制造方法 - Google Patents

半导体激光元件及半导体激光元件的制造方法 Download PDF

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Publication number
CN118715679A
CN118715679A CN202380022515.9A CN202380022515A CN118715679A CN 118715679 A CN118715679 A CN 118715679A CN 202380022515 A CN202380022515 A CN 202380022515A CN 118715679 A CN118715679 A CN 118715679A
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CN
China
Prior art keywords
insulating film
semiconductor laser
laser device
layer
ridge portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380022515.9A
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English (en)
Chinese (zh)
Inventor
竹村公志
井上升
中泽崇一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuvoton Technology Corp Japan
Original Assignee
Nuvoton Technology Corp Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuvoton Technology Corp Japan filed Critical Nuvoton Technology Corp Japan
Publication of CN118715679A publication Critical patent/CN118715679A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CN202380022515.9A 2022-02-22 2023-02-20 半导体激光元件及半导体激光元件的制造方法 Pending CN118715679A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022025940 2022-02-22
JP2022-025940 2022-02-22
PCT/JP2023/006020 WO2023162929A1 (ja) 2022-02-22 2023-02-20 半導体レーザ素子、及び半導体レーザ素子の製造方法

Publications (1)

Publication Number Publication Date
CN118715679A true CN118715679A (zh) 2024-09-27

Family

ID=87765811

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380022515.9A Pending CN118715679A (zh) 2022-02-22 2023-02-20 半导体激光元件及半导体激光元件的制造方法

Country Status (3)

Country Link
JP (1) JPWO2023162929A1 (https=)
CN (1) CN118715679A (https=)
WO (1) WO2023162929A1 (https=)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261380A (ja) * 2000-12-27 2002-09-13 Furukawa Electric Co Ltd:The 半導体装置およびその製造方法
JP4383753B2 (ja) * 2003-02-19 2009-12-16 日亜化学工業株式会社 窒化物半導体素子の製造方法及び窒化物半導体素子
JP2006324427A (ja) * 2005-05-18 2006-11-30 Mitsubishi Electric Corp 半導体レーザ
JP2007311591A (ja) * 2006-05-19 2007-11-29 Matsushita Electric Ind Co Ltd 窒化物半導体レーザ装置及びその製造方法
JP2010021206A (ja) * 2008-07-08 2010-01-28 Panasonic Corp 半導体発光素子
DE102014105191B4 (de) * 2014-04-11 2019-09-19 Osram Opto Semiconductors Gmbh Halbleiter-Streifenlaser und Halbleiterbauteil
WO2020110783A1 (ja) * 2018-11-30 2020-06-04 パナソニックセミコンダクターソリューションズ株式会社 半導体レーザ装置
CN115039201B (zh) * 2020-02-06 2025-02-28 三菱电机株式会社 半导体装置及其制造方法

Also Published As

Publication number Publication date
JPWO2023162929A1 (https=) 2023-08-31
WO2023162929A1 (ja) 2023-08-31

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