JPWO2021260849A5 - - Google Patents
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- JPWO2021260849A5 JPWO2021260849A5 JP2022531322A JP2022531322A JPWO2021260849A5 JP WO2021260849 A5 JPWO2021260849 A5 JP WO2021260849A5 JP 2022531322 A JP2022531322 A JP 2022531322A JP 2022531322 A JP2022531322 A JP 2022531322A JP WO2021260849 A5 JPWO2021260849 A5 JP WO2021260849A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- mole fraction
- layer
- metastable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims 3
- 239000010980 sapphire Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 210000000746 body region Anatomy 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 238000005253 cladding Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/024827 WO2021260849A1 (ja) | 2020-06-24 | 2020-06-24 | 窒化物半導体紫外線発光素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021260849A1 JPWO2021260849A1 (https=) | 2021-12-30 |
| JPWO2021260849A5 true JPWO2021260849A5 (https=) | 2022-12-28 |
| JP7406632B2 JP7406632B2 (ja) | 2023-12-27 |
Family
ID=79282112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022531322A Active JP7406632B2 (ja) | 2020-06-24 | 2020-06-24 | 窒化物半導体紫外線発光素子 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12324279B2 (https=) |
| JP (1) | JP7406632B2 (https=) |
| CN (1) | CN115699341B (https=) |
| TW (1) | TWI828945B (https=) |
| WO (1) | WO2021260849A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023203599A1 (ja) * | 2022-04-18 | 2023-10-26 | 日機装株式会社 | 窒化物半導体紫外線発光素子 |
| JP7405902B2 (ja) * | 2022-05-20 | 2023-12-26 | 日機装株式会社 | 窒化物半導体発光素子 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002016000A (ja) * | 2000-06-27 | 2002-01-18 | Sanyo Electric Co Ltd | 窒化物系半導体素子および窒化物系半導体基板 |
| US7777241B2 (en) * | 2004-04-15 | 2010-08-17 | The Trustees Of Boston University | Optical devices featuring textured semiconductor layers |
| JP2006060164A (ja) | 2004-08-24 | 2006-03-02 | National Institute Of Advanced Industrial & Technology | 窒化物半導体デバイスおよび窒化物半導体結晶成長方法 |
| WO2014178288A1 (ja) | 2013-04-30 | 2014-11-06 | 創光科学株式会社 | 紫外線発光装置 |
| KR102318317B1 (ko) * | 2014-05-27 | 2021-10-28 | 실라나 유브이 테크놀로지스 피티이 리미티드 | 반도체 구조물과 초격자를 사용하는 진보된 전자 디바이스 구조 |
| JP6408344B2 (ja) * | 2014-11-04 | 2018-10-17 | Ｄｏｗａエレクトロニクス株式会社 | Ｉｉｉ族窒化物半導体エピタキシャル基板およびその製造方法、ならびにｉｉｉ族窒化物半導体発光素子 |
| WO2016157518A1 (ja) | 2015-04-03 | 2016-10-06 | 創光科学株式会社 | 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光装置 |
| EP3293774B1 (en) * | 2015-07-21 | 2020-03-18 | Soko Kagaku Co., Ltd. | Nitride semiconductor ultraviolet light-emitting element |
| JP2019531245A (ja) * | 2016-08-12 | 2019-10-31 | イェール ユニバーシティーＹａｌｅ Ｕｎｉｖｅｒｓｉｔｙ | 成長の際に窒素極性ファセットを排除することによる異種基板上で成長する積層欠陥のない半極性および非極性ＧａＮ |
| KR102054094B1 (ko) * | 2017-05-26 | 2019-12-09 | 소코 가가쿠 가부시키가이샤 | 템플릿, 질화물 반도체 자외선 발광 소자 및 템플릿의 제조 방법 |
| WO2019102557A1 (ja) | 2017-11-22 | 2019-05-31 | 創光科学株式会社 | 窒化物半導体発光素子 |
| WO2019159265A1 (ja) | 2018-02-14 | 2019-08-22 | 創光科学株式会社 | 窒化物半導体紫外線発光素子 |
-
2020
- 2020-06-24 US US17/926,269 patent/US12324279B2/en active Active
- 2020-06-24 JP JP2022531322A patent/JP7406632B2/ja active Active
- 2020-06-24 CN CN202080102072.0A patent/CN115699341B/zh active Active
- 2020-06-24 WO PCT/JP2020/024827 patent/WO2021260849A1/ja not_active Ceased
- 2020-10-12 TW TW109135120A patent/TWI828945B/zh active
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