JP7406632B2 - 窒化物半導体紫外線発光素子 - Google Patents

窒化物半導体紫外線発光素子 Download PDF

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Publication number
JP7406632B2
JP7406632B2 JP2022531322A JP2022531322A JP7406632B2 JP 7406632 B2 JP7406632 B2 JP 7406632B2 JP 2022531322 A JP2022531322 A JP 2022531322A JP 2022531322 A JP2022531322 A JP 2022531322A JP 7406632 B2 JP7406632 B2 JP 7406632B2
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JPWO2021260849A5 (https=
JPWO2021260849A1 (https=
Inventor
光 平野
陽祐 長澤
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Nikkiso Co Ltd
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Nikkiso Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions

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  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
JP2022531322A 2020-06-24 2020-06-24 窒化物半導体紫外線発光素子 Active JP7406632B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/024827 WO2021260849A1 (ja) 2020-06-24 2020-06-24 窒化物半導体紫外線発光素子

Publications (3)

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JPWO2021260849A1 JPWO2021260849A1 (https=) 2021-12-30
JPWO2021260849A5 JPWO2021260849A5 (https=) 2022-12-28
JP7406632B2 true JP7406632B2 (ja) 2023-12-27

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JP2022531322A Active JP7406632B2 (ja) 2020-06-24 2020-06-24 窒化物半導体紫外線発光素子

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US (1) US12324279B2 (https=)
JP (1) JP7406632B2 (https=)
CN (1) CN115699341B (https=)
TW (1) TWI828945B (https=)
WO (1) WO2021260849A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023203599A1 (ja) * 2022-04-18 2023-10-26 日機装株式会社 窒化物半導体紫外線発光素子
JP7405902B2 (ja) * 2022-05-20 2023-12-26 日機装株式会社 窒化物半導体発光素子

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017013729A1 (ja) 2015-07-21 2017-01-26 創光科学株式会社 窒化物半導体紫外線発光素子
WO2019102557A1 (ja) 2017-11-22 2019-05-31 創光科学株式会社 窒化物半導体発光素子

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002016000A (ja) * 2000-06-27 2002-01-18 Sanyo Electric Co Ltd 窒化物系半導体素子および窒化物系半導体基板
US7777241B2 (en) * 2004-04-15 2010-08-17 The Trustees Of Boston University Optical devices featuring textured semiconductor layers
JP2006060164A (ja) 2004-08-24 2006-03-02 National Institute Of Advanced Industrial & Technology 窒化物半導体デバイスおよび窒化物半導体結晶成長方法
WO2014178288A1 (ja) 2013-04-30 2014-11-06 創光科学株式会社 紫外線発光装置
KR102318317B1 (ko) * 2014-05-27 2021-10-28 실라나 유브이 테크놀로지스 피티이 리미티드 반도체 구조물과 초격자를 사용하는 진보된 전자 디바이스 구조
JP6408344B2 (ja) * 2014-11-04 2018-10-17 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体エピタキシャル基板およびその製造方法、ならびにｉｉｉ族窒化物半導体発光素子
WO2016157518A1 (ja) 2015-04-03 2016-10-06 創光科学株式会社 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光装置
JP2019531245A (ja) * 2016-08-12 2019-10-31 イェール ユニバーシティーＹａｌｅ Ｕｎｉｖｅｒｓｉｔｙ 成長の際に窒素極性ファセットを排除することによる異種基板上で成長する積層欠陥のない半極性および非極性ＧａＮ
KR102054094B1 (ko) * 2017-05-26 2019-12-09 소코 가가쿠 가부시키가이샤 템플릿, 질화물 반도체 자외선 발광 소자 및 템플릿의 제조 방법
WO2019159265A1 (ja) 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017013729A1 (ja) 2015-07-21 2017-01-26 創光科学株式会社 窒化物半導体紫外線発光素子
WO2019102557A1 (ja) 2017-11-22 2019-05-31 創光科学株式会社 窒化物半導体発光素子

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Publication number Publication date
CN115699341B (zh) 2025-04-29
TWI828945B (zh) 2024-01-11
US12324279B2 (en) 2025-06-03
US20230207731A1 (en) 2023-06-29
CN115699341A (zh) 2023-02-03
TW202201814A (zh) 2022-01-01
WO2021260849A1 (ja) 2021-12-30
JPWO2021260849A1 (https=) 2021-12-30

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