TWI828945B - 氮化物半導體紫外線發光元件 - Google Patents
氮化物半導體紫外線發光元件 Download PDFInfo
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- TWI828945B TWI828945B TW109135120A TW109135120A TWI828945B TW I828945 B TWI828945 B TW I828945B TW 109135120 A TW109135120 A TW 109135120A TW 109135120 A TW109135120 A TW 109135120A TW I828945 B TWI828945 B TW I828945B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 192
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 71
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 221
- 230000012010 growth Effects 0.000 claims abstract description 60
- 239000000203 mixture Substances 0.000 claims abstract description 52
- 230000004888 barrier function Effects 0.000 claims description 110
- 239000000758 substrate Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 44
- 229910052594 sapphire Inorganic materials 0.000 claims description 37
- 239000010980 sapphire Substances 0.000 claims description 37
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 230000008569 process Effects 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 18
- 230000008859 change Effects 0.000 claims description 10
- 229910052950 sphalerite Inorganic materials 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical group [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 abstract description 3
- 238000005253 cladding Methods 0.000 description 107
- 238000005259 measurement Methods 0.000 description 107
- 238000001228 spectrum Methods 0.000 description 56
- 239000000523 sample Substances 0.000 description 37
- 229910052782 aluminium Inorganic materials 0.000 description 35
- 210000000746 body region Anatomy 0.000 description 33
- 239000013078 crystal Substances 0.000 description 33
- 229910052733 gallium Inorganic materials 0.000 description 33
- 238000004458 analytical method Methods 0.000 description 25
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- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 18
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- 229910021478 group 5 element Inorganic materials 0.000 description 8
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- 229910052796 boron Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 150000002736 metal compounds Chemical class 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000005204 segregation Methods 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000000851 scanning transmission electron micrograph Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
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- 230000001747 exhibiting effect Effects 0.000 description 1
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- 238000001020 plasma etching Methods 0.000 description 1
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- 230000001681 protective effect Effects 0.000 description 1
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- 238000012552 review Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 208000012201 sexual and gender identity disease Diseases 0.000 description 1
- 208000015891 sexual disease Diseases 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
- H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
Landscapes
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| WOPCT/JP2020/024827 | 2020-06-24 | ||
| PCT/JP2020/024827 WO2021260849A1 (ja) | 2020-06-24 | 2020-06-24 | 窒化物半導体紫外線発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202201814A TW202201814A (zh) | 2022-01-01 |
| TWI828945B true TWI828945B (zh) | 2024-01-11 |
Family
ID=79282112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109135120A TWI828945B (zh) | 2020-06-24 | 2020-10-12 | 氮化物半導體紫外線發光元件 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12324279B2 (https=) |
| JP (1) | JP7406632B2 (https=) |
| CN (1) | CN115699341B (https=) |
| TW (1) | TWI828945B (https=) |
| WO (1) | WO2021260849A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023203599A1 (ja) * | 2022-04-18 | 2023-10-26 | 日機装株式会社 | 窒化物半導体紫外線発光素子 |
| JP7405902B2 (ja) * | 2022-05-20 | 2023-12-26 | 日機装株式会社 | 窒化物半導体発光素子 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201603265A (zh) * | 2014-05-27 | 2016-01-16 | 西拉娜集團私人有限公司 | 使用半導體結構及超晶格的高級電子裝置結構 |
| WO2017013729A1 (ja) * | 2015-07-21 | 2017-01-26 | 創光科学株式会社 | 窒化物半導体紫外線発光素子 |
| WO2019102557A1 (ja) * | 2017-11-22 | 2019-05-31 | 創光科学株式会社 | 窒化物半導体発光素子 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002016000A (ja) * | 2000-06-27 | 2002-01-18 | Sanyo Electric Co Ltd | 窒化物系半導体素子および窒化物系半導体基板 |
| US7777241B2 (en) * | 2004-04-15 | 2010-08-17 | The Trustees Of Boston University | Optical devices featuring textured semiconductor layers |
| JP2006060164A (ja) | 2004-08-24 | 2006-03-02 | National Institute Of Advanced Industrial & Technology | 窒化物半導体デバイスおよび窒化物半導体結晶成長方法 |
| WO2014178288A1 (ja) | 2013-04-30 | 2014-11-06 | 創光科学株式会社 | 紫外線発光装置 |
| JP6408344B2 (ja) * | 2014-11-04 | 2018-10-17 | Ｄｏｗａエレクトロニクス株式会社 | Ｉｉｉ族窒化物半導体エピタキシャル基板およびその製造方法、ならびにｉｉｉ族窒化物半導体発光素子 |
| WO2016157518A1 (ja) | 2015-04-03 | 2016-10-06 | 創光科学株式会社 | 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光装置 |
| JP2019531245A (ja) * | 2016-08-12 | 2019-10-31 | イェール ユニバーシティーＹａｌｅ Ｕｎｉｖｅｒｓｉｔｙ | 成長の際に窒素極性ファセットを排除することによる異種基板上で成長する積層欠陥のない半極性および非極性ＧａＮ |
| KR102054094B1 (ko) * | 2017-05-26 | 2019-12-09 | 소코 가가쿠 가부시키가이샤 | 템플릿, 질화물 반도체 자외선 발광 소자 및 템플릿의 제조 방법 |
| WO2019159265A1 (ja) | 2018-02-14 | 2019-08-22 | 創光科学株式会社 | 窒化物半導体紫外線発光素子 |
-
2020
- 2020-06-24 US US17/926,269 patent/US12324279B2/en active Active
- 2020-06-24 JP JP2022531322A patent/JP7406632B2/ja active Active
- 2020-06-24 CN CN202080102072.0A patent/CN115699341B/zh active Active
- 2020-06-24 WO PCT/JP2020/024827 patent/WO2021260849A1/ja not_active Ceased
- 2020-10-12 TW TW109135120A patent/TWI828945B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201603265A (zh) * | 2014-05-27 | 2016-01-16 | 西拉娜集團私人有限公司 | 使用半導體結構及超晶格的高級電子裝置結構 |
| WO2017013729A1 (ja) * | 2015-07-21 | 2017-01-26 | 創光科学株式会社 | 窒化物半導体紫外線発光素子 |
| WO2019102557A1 (ja) * | 2017-11-22 | 2019-05-31 | 創光科学株式会社 | 窒化物半導体発光素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7406632B2 (ja) | 2023-12-27 |
| CN115699341B (zh) | 2025-04-29 |
| US12324279B2 (en) | 2025-06-03 |
| US20230207731A1 (en) | 2023-06-29 |
| CN115699341A (zh) | 2023-02-03 |
| TW202201814A (zh) | 2022-01-01 |
| WO2021260849A1 (ja) | 2021-12-30 |
| JPWO2021260849A1 (https=) | 2021-12-30 |
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