JPWO2021260850A5 - - Google Patents
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- JPWO2021260850A5 JPWO2021260850A5 JP2022531323A JP2022531323A JPWO2021260850A5 JP WO2021260850 A5 JPWO2021260850 A5 JP WO2021260850A5 JP 2022531323 A JP2022531323 A JP 2022531323A JP 2022531323 A JP2022531323 A JP 2022531323A JP WO2021260850 A5 JPWO2021260850 A5 JP WO2021260850A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- type
- metastable
- algan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910002704 AlGaN Inorganic materials 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims 3
- 239000010980 sapphire Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000005259 measurement Methods 0.000 description 13
- 210000000746 body region Anatomy 0.000 description 10
- 238000001228 spectrum Methods 0.000 description 9
- 238000005253 cladding Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 4
- 239000000523 sample Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/024828 WO2021260850A1 (ja) | 2020-06-24 | 2020-06-24 | 窒化物半導体紫外線発光素子及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021260850A1 JPWO2021260850A1 (https=) | 2021-12-30 |
| JPWO2021260850A5 true JPWO2021260850A5 (https=) | 2023-01-06 |
| JP7406633B2 JP7406633B2 (ja) | 2023-12-27 |
Family
ID=79282116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022531323A Active JP7406633B2 (ja) | 2020-06-24 | 2020-06-24 | 窒化物半導体紫外線発光素子及びその製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12419139B2 (https=) |
| JP (1) | JP7406633B2 (https=) |
| KR (1) | KR102833536B1 (https=) |
| CN (1) | CN115699340B (https=) |
| TW (1) | TWI851832B (https=) |
| WO (1) | WO2021260850A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023203599A1 (ja) * | 2022-04-18 | 2023-10-26 | 日機装株式会社 | 窒化物半導体紫外線発光素子 |
| JP7405902B2 (ja) * | 2022-05-20 | 2023-12-26 | 日機装株式会社 | 窒化物半導体発光素子 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002016000A (ja) | 2000-06-27 | 2002-01-18 | Sanyo Electric Co Ltd | 窒化物系半導体素子および窒化物系半導体基板 |
| AUPS240402A0 (en) | 2002-05-17 | 2002-06-13 | Macquarie Research Limited | Gallium nitride |
| JP2006060164A (ja) * | 2004-08-24 | 2006-03-02 | National Institute Of Advanced Industrial & Technology | 窒化物半導体デバイスおよび窒化物半導体結晶成長方法 |
| JP5032171B2 (ja) * | 2007-03-26 | 2012-09-26 | 株式会社東芝 | 半導体発光素子およびその製造方法ならびに発光装置 |
| KR20140043161A (ko) * | 2011-08-09 | 2014-04-08 | 소코 가가쿠 가부시키가이샤 | 질화물 반도체 자외선 발광 소자 |
| WO2014178288A1 (ja) | 2013-04-30 | 2014-11-06 | 創光科学株式会社 | 紫外線発光装置 |
| CN106233429B (zh) * | 2014-04-16 | 2019-06-18 | 耶鲁大学 | 获得平坦的半极性氮化镓表面的方法 |
| JP6408344B2 (ja) | 2014-11-04 | 2018-10-17 | Ｄｏｗａエレクトロニクス株式会社 | Ｉｉｉ族窒化物半導体エピタキシャル基板およびその製造方法、ならびにｉｉｉ族窒化物半導体発光素子 |
| WO2016157518A1 (ja) | 2015-04-03 | 2016-10-06 | 創光科学株式会社 | 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光装置 |
| US10290767B2 (en) * | 2015-06-09 | 2019-05-14 | The Royal Institution For The Advancement Of Learning/Mcgill University | High efficiency visible and ultraviolet nanowire emitters |
| EP3293774B1 (en) * | 2015-07-21 | 2020-03-18 | Soko Kagaku Co., Ltd. | Nitride semiconductor ultraviolet light-emitting element |
| JP2019531245A (ja) | 2016-08-12 | 2019-10-31 | イェール ユニバーシティーＹａｌｅ Ｕｎｉｖｅｒｓｉｔｙ | 成長の際に窒素極性ファセットを排除することによる異種基板上で成長する積層欠陥のない半極性および非極性ＧａＮ |
| KR102054094B1 (ko) | 2017-05-26 | 2019-12-09 | 소코 가가쿠 가부시키가이샤 | 템플릿, 질화물 반도체 자외선 발광 소자 및 템플릿의 제조 방법 |
| WO2019102557A1 (ja) * | 2017-11-22 | 2019-05-31 | 創光科学株式会社 | 窒化物半導体発光素子 |
| WO2019159265A1 (ja) | 2018-02-14 | 2019-08-22 | 創光科学株式会社 | 窒化物半導体紫外線発光素子 |
-
2020
- 2020-06-24 WO PCT/JP2020/024828 patent/WO2021260850A1/ja not_active Ceased
- 2020-06-24 JP JP2022531323A patent/JP7406633B2/ja active Active
- 2020-06-24 CN CN202080102059.5A patent/CN115699340B/zh active Active
- 2020-06-24 US US17/926,240 patent/US12419139B2/en active Active
- 2020-06-24 KR KR1020227040420A patent/KR102833536B1/ko active Active
- 2020-10-12 TW TW109135119A patent/TWI851832B/zh active
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