CN115699340B - 氮化物半导体紫外线发光元件及其制造方法 - Google Patents

氮化物半导体紫外线发光元件及其制造方法 Download PDF

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Publication number
CN115699340B
CN115699340B CN202080102059.5A CN202080102059A CN115699340B CN 115699340 B CN115699340 B CN 115699340B CN 202080102059 A CN202080102059 A CN 202080102059A CN 115699340 B CN115699340 B CN 115699340B
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algan
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mole fraction
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CN115699340A (zh
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平野光
长泽阳祐
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Nikkiso Co Ltd
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Nikkiso Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping

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  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
CN202080102059.5A 2020-06-24 2020-06-24 氮化物半导体紫外线发光元件及其制造方法 Active CN115699340B (zh)

Applications Claiming Priority (1)

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PCT/JP2020/024828 WO2021260850A1 (ja) 2020-06-24 2020-06-24 窒化物半導体紫外線発光素子及びその製造方法

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CN115699340A CN115699340A (zh) 2023-02-03
CN115699340B true CN115699340B (zh) 2025-01-24

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Country Link
US (1) US12419139B2 (https=)
JP (1) JP7406633B2 (https=)
KR (1) KR102833536B1 (https=)
CN (1) CN115699340B (https=)
TW (1) TWI851832B (https=)
WO (1) WO2021260850A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023203599A1 (ja) * 2022-04-18 2023-10-26 日機装株式会社 窒化物半導体紫外線発光素子
JP7405902B2 (ja) * 2022-05-20 2023-12-26 日機装株式会社 窒化物半導体発光素子

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002016000A (ja) 2000-06-27 2002-01-18 Sanyo Electric Co Ltd 窒化物系半導体素子および窒化物系半導体基板
AUPS240402A0 (en) 2002-05-17 2002-06-13 Macquarie Research Limited Gallium nitride
JP2006060164A (ja) * 2004-08-24 2006-03-02 National Institute Of Advanced Industrial & Technology 窒化物半導体デバイスおよび窒化物半導体結晶成長方法
JP5032171B2 (ja) * 2007-03-26 2012-09-26 株式会社東芝 半導体発光素子およびその製造方法ならびに発光装置
KR20140043161A (ko) * 2011-08-09 2014-04-08 소코 가가쿠 가부시키가이샤 질화물 반도체 자외선 발광 소자
WO2014178288A1 (ja) 2013-04-30 2014-11-06 創光科学株式会社 紫外線発光装置
CN106233429B (zh) * 2014-04-16 2019-06-18 耶鲁大学 获得平坦的半极性氮化镓表面的方法
JP6408344B2 (ja) 2014-11-04 2018-10-17 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体エピタキシャル基板およびその製造方法、ならびにｉｉｉ族窒化物半導体発光素子
WO2016157518A1 (ja) 2015-04-03 2016-10-06 創光科学株式会社 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光装置
US10290767B2 (en) * 2015-06-09 2019-05-14 The Royal Institution For The Advancement Of Learning/Mcgill University High efficiency visible and ultraviolet nanowire emitters
EP3293774B1 (en) * 2015-07-21 2020-03-18 Soko Kagaku Co., Ltd. Nitride semiconductor ultraviolet light-emitting element
JP2019531245A (ja) 2016-08-12 2019-10-31 イェール ユニバーシティーＹａｌｅ Ｕｎｉｖｅｒｓｉｔｙ 成長の際に窒素極性ファセットを排除することによる異種基板上で成長する積層欠陥のない半極性および非極性ＧａＮ
KR102054094B1 (ko) 2017-05-26 2019-12-09 소코 가가쿠 가부시키가이샤 템플릿, 질화물 반도체 자외선 발광 소자 및 템플릿의 제조 방법
WO2019102557A1 (ja) * 2017-11-22 2019-05-31 創光科学株式会社 窒化物半導体発光素子
WO2019159265A1 (ja) 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子

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Publication number Publication date
KR20230002875A (ko) 2023-01-05
JPWO2021260850A1 (https=) 2021-12-30
TW202201813A (zh) 2022-01-01
US20230197889A1 (en) 2023-06-22
WO2021260850A1 (ja) 2021-12-30
KR102833536B1 (ko) 2025-07-11
US12419139B2 (en) 2025-09-16
JP7406633B2 (ja) 2023-12-27
TWI851832B (zh) 2024-08-11
CN115699340A (zh) 2023-02-03

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