TWI851832B - 氮化物半導體紫外線發光元件及其製造方法 - Google Patents

氮化物半導體紫外線發光元件及其製造方法 Download PDF

Info

Publication number
TWI851832B
TWI851832B TW109135119A TW109135119A TWI851832B TW I851832 B TWI851832 B TW I851832B TW 109135119 A TW109135119 A TW 109135119A TW 109135119 A TW109135119 A TW 109135119A TW I851832 B TWI851832 B TW I851832B
Authority
TW
Taiwan
Prior art keywords
layer
algan
type
aforementioned
region
Prior art date
Application number
TW109135119A
Other languages
English (en)
Chinese (zh)
Other versions
TW202201813A (zh
Inventor
平野光
長澤陽祐
Original Assignee
日商日機裝股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日機裝股份有限公司 filed Critical 日商日機裝股份有限公司
Publication of TW202201813A publication Critical patent/TW202201813A/zh
Application granted granted Critical
Publication of TWI851832B publication Critical patent/TWI851832B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping

Landscapes

  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
TW109135119A 2020-06-24 2020-10-12 氮化物半導體紫外線發光元件及其製造方法 TWI851832B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2020/024828 2020-06-24
PCT/JP2020/024828 WO2021260850A1 (ja) 2020-06-24 2020-06-24 窒化物半導体紫外線発光素子及びその製造方法

Publications (2)

Publication Number Publication Date
TW202201813A TW202201813A (zh) 2022-01-01
TWI851832B true TWI851832B (zh) 2024-08-11

Family

ID=79282116

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109135119A TWI851832B (zh) 2020-06-24 2020-10-12 氮化物半導體紫外線發光元件及其製造方法

Country Status (6)

Country Link
US (1) US12419139B2 (https=)
JP (1) JP7406633B2 (https=)
KR (1) KR102833536B1 (https=)
CN (1) CN115699340B (https=)
TW (1) TWI851832B (https=)
WO (1) WO2021260850A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023203599A1 (ja) * 2022-04-18 2023-10-26 日機装株式会社 窒化物半導体紫外線発光素子
JP7405902B2 (ja) * 2022-05-20 2023-12-26 日機装株式会社 窒化物半導体発光素子

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017013729A1 (ja) * 2015-07-21 2017-01-26 創光科学株式会社 窒化物半導体紫外線発光素子
WO2019102557A1 (ja) * 2017-11-22 2019-05-31 創光科学株式会社 窒化物半導体発光素子

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002016000A (ja) 2000-06-27 2002-01-18 Sanyo Electric Co Ltd 窒化物系半導体素子および窒化物系半導体基板
AUPS240402A0 (en) 2002-05-17 2002-06-13 Macquarie Research Limited Gallium nitride
JP2006060164A (ja) * 2004-08-24 2006-03-02 National Institute Of Advanced Industrial & Technology 窒化物半導体デバイスおよび窒化物半導体結晶成長方法
JP5032171B2 (ja) * 2007-03-26 2012-09-26 株式会社東芝 半導体発光素子およびその製造方法ならびに発光装置
KR20140043161A (ko) * 2011-08-09 2014-04-08 소코 가가쿠 가부시키가이샤 질화물 반도체 자외선 발광 소자
WO2014178288A1 (ja) 2013-04-30 2014-11-06 創光科学株式会社 紫外線発光装置
CN106233429B (zh) * 2014-04-16 2019-06-18 耶鲁大学 获得平坦的半极性氮化镓表面的方法
JP6408344B2 (ja) 2014-11-04 2018-10-17 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体エピタキシャル基板およびその製造方法、ならびにｉｉｉ族窒化物半導体発光素子
WO2016157518A1 (ja) 2015-04-03 2016-10-06 創光科学株式会社 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光装置
US10290767B2 (en) * 2015-06-09 2019-05-14 The Royal Institution For The Advancement Of Learning/Mcgill University High efficiency visible and ultraviolet nanowire emitters
JP2019531245A (ja) 2016-08-12 2019-10-31 イェール ユニバーシティーＹａｌｅ Ｕｎｉｖｅｒｓｉｔｙ 成長の際に窒素極性ファセットを排除することによる異種基板上で成長する積層欠陥のない半極性および非極性ＧａＮ
KR102054094B1 (ko) 2017-05-26 2019-12-09 소코 가가쿠 가부시키가이샤 템플릿, 질화물 반도체 자외선 발광 소자 및 템플릿의 제조 방법
WO2019159265A1 (ja) 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017013729A1 (ja) * 2015-07-21 2017-01-26 創光科学株式会社 窒化物半導体紫外線発光素子
WO2019102557A1 (ja) * 2017-11-22 2019-05-31 創光科学株式会社 窒化物半導体発光素子

Also Published As

Publication number Publication date
KR20230002875A (ko) 2023-01-05
JPWO2021260850A1 (https=) 2021-12-30
TW202201813A (zh) 2022-01-01
US20230197889A1 (en) 2023-06-22
CN115699340B (zh) 2025-01-24
WO2021260850A1 (ja) 2021-12-30
KR102833536B1 (ko) 2025-07-11
US12419139B2 (en) 2025-09-16
JP7406633B2 (ja) 2023-12-27
CN115699340A (zh) 2023-02-03

Similar Documents

Publication Publication Date Title
TWI851832B (zh) 氮化物半導體紫外線發光元件及其製造方法
US20150349199A1 (en) Semiconductor light emitting device and wafer
TWI828945B (zh) 氮化物半導體紫外線發光元件
TWI883207B (zh) 氮化物半導體紫外線發光元件
JP7421657B2 (ja) 窒化物半導体紫外線発光素子
CN111788701B (zh) 包含三维发光二极管的光电设备
TWI881114B (zh) 氮化物半導體紫外線發光元件及其製造方法
JP7614449B2 (ja) 窒化物半導体紫外線発光素子
TWI907573B (zh) 氮化物半導體紫外線發光元件及其製造方法
JP7672778B2 (ja) 窒化物半導体紫外線発光素子の製造方法、及び、窒化物半導体紫外線発光素子
TW202218178A (zh) 氮化物半導體紫外線發光元件