JPWO2021260850A1 - - Google Patents
Info
- Publication number
- JPWO2021260850A1 JPWO2021260850A1 JP2022531323A JP2022531323A JPWO2021260850A1 JP WO2021260850 A1 JPWO2021260850 A1 JP WO2021260850A1 JP 2022531323 A JP2022531323 A JP 2022531323A JP 2022531323 A JP2022531323 A JP 2022531323A JP WO2021260850 A1 JPWO2021260850 A1 JP WO2021260850A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
- H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
Landscapes
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/024828 WO2021260850A1 (ja) | 2020-06-24 | 2020-06-24 | 窒化物半導体紫外線発光素子及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021260850A1 true JPWO2021260850A1 (https=) | 2021-12-30 |
| JPWO2021260850A5 JPWO2021260850A5 (https=) | 2023-01-06 |
| JP7406633B2 JP7406633B2 (ja) | 2023-12-27 |
Family
ID=79282116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022531323A Active JP7406633B2 (ja) | 2020-06-24 | 2020-06-24 | 窒化物半導体紫外線発光素子及びその製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12419139B2 (https=) |
| JP (1) | JP7406633B2 (https=) |
| KR (1) | KR102833536B1 (https=) |
| CN (1) | CN115699340B (https=) |
| TW (1) | TWI851832B (https=) |
| WO (1) | WO2021260850A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023203599A1 (ja) * | 2022-04-18 | 2023-10-26 | 日機装株式会社 | 窒化物半導体紫外線発光素子 |
| JP7405902B2 (ja) * | 2022-05-20 | 2023-12-26 | 日機装株式会社 | 窒化物半導体発光素子 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002016000A (ja) * | 2000-06-27 | 2002-01-18 | Sanyo Electric Co Ltd | 窒化物系半導体素子および窒化物系半導体基板 |
| JP2006060164A (ja) * | 2004-08-24 | 2006-03-02 | National Institute Of Advanced Industrial & Technology | 窒化物半導体デバイスおよび窒化物半導体結晶成長方法 |
| JP2016088803A (ja) * | 2014-11-04 | 2016-05-23 | Ｄｏｗａエレクトロニクス株式会社 | Ｉｉｉ族窒化物半導体エピタキシャル基板およびその製造方法、ならびにｉｉｉ族窒化物半導体発光素子 |
| WO2017013729A1 (ja) * | 2015-07-21 | 2017-01-26 | 創光科学株式会社 | 窒化物半導体紫外線発光素子 |
| WO2019102557A1 (ja) * | 2017-11-22 | 2019-05-31 | 創光科学株式会社 | 窒化物半導体発光素子 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AUPS240402A0 (en) * | 2002-05-17 | 2002-06-13 | Macquarie Research Limited | Gallium nitride |
| JP5032171B2 (ja) * | 2007-03-26 | 2012-09-26 | 株式会社東芝 | 半導体発光素子およびその製造方法ならびに発光装置 |
| US9356192B2 (en) * | 2011-08-09 | 2016-05-31 | Soko Kagaku Co., Ltd. | Nitride semiconductor ultraviolet light-emitting element |
| KR101539206B1 (ko) | 2013-04-30 | 2015-07-23 | 소코 가가쿠 가부시키가이샤 | 자외선 발광 장치 |
| WO2015160909A1 (en) * | 2014-04-16 | 2015-10-22 | Yale University | Method of obtaining planar semipolar gallium nitride surfaces |
| WO2016157518A1 (ja) | 2015-04-03 | 2016-10-06 | 創光科学株式会社 | 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光装置 |
| US10290767B2 (en) * | 2015-06-09 | 2019-05-14 | The Royal Institution For The Advancement Of Learning/Mcgill University | High efficiency visible and ultraviolet nanowire emitters |
| WO2018031876A1 (en) | 2016-08-12 | 2018-02-15 | Yale University | Stacking fault-free semipolar and nonpolar gan grown on foreign substrates by eliminating the nitrogen polar facets during the growth |
| RU2702948C1 (ru) | 2017-05-26 | 2019-10-14 | Соко Кагаку Ко., Лтд. | Основание, нитридный полупроводниковый излучающий ультрафиолетовое излучение элемент и способ производства основания |
| EP3754732B1 (en) | 2018-02-14 | 2023-04-12 | Soko Kagaku Co., Ltd. | Nitride semiconductor ultraviolet light-emitting element |
-
2020
- 2020-06-24 US US17/926,240 patent/US12419139B2/en active Active
- 2020-06-24 WO PCT/JP2020/024828 patent/WO2021260850A1/ja not_active Ceased
- 2020-06-24 KR KR1020227040420A patent/KR102833536B1/ko active Active
- 2020-06-24 JP JP2022531323A patent/JP7406633B2/ja active Active
- 2020-06-24 CN CN202080102059.5A patent/CN115699340B/zh active Active
- 2020-10-12 TW TW109135119A patent/TWI851832B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002016000A (ja) * | 2000-06-27 | 2002-01-18 | Sanyo Electric Co Ltd | 窒化物系半導体素子および窒化物系半導体基板 |
| JP2006060164A (ja) * | 2004-08-24 | 2006-03-02 | National Institute Of Advanced Industrial & Technology | 窒化物半導体デバイスおよび窒化物半導体結晶成長方法 |
| JP2016088803A (ja) * | 2014-11-04 | 2016-05-23 | Ｄｏｗａエレクトロニクス株式会社 | Ｉｉｉ族窒化物半導体エピタキシャル基板およびその製造方法、ならびにｉｉｉ族窒化物半導体発光素子 |
| WO2017013729A1 (ja) * | 2015-07-21 | 2017-01-26 | 創光科学株式会社 | 窒化物半導体紫外線発光素子 |
| WO2019102557A1 (ja) * | 2017-11-22 | 2019-05-31 | 創光科学株式会社 | 窒化物半導体発光素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202201813A (zh) | 2022-01-01 |
| CN115699340A (zh) | 2023-02-03 |
| WO2021260850A1 (ja) | 2021-12-30 |
| KR20230002875A (ko) | 2023-01-05 |
| CN115699340B (zh) | 2025-01-24 |
| KR102833536B1 (ko) | 2025-07-11 |
| JP7406633B2 (ja) | 2023-12-27 |
| US12419139B2 (en) | 2025-09-16 |
| TWI851832B (zh) | 2024-08-11 |
| US20230197889A1 (en) | 2023-06-22 |
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