JPWO2022059125A5 - - Google Patents
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- JPWO2022059125A5 JPWO2022059125A5 JP2022550255A JP2022550255A JPWO2022059125A5 JP WO2022059125 A5 JPWO2022059125 A5 JP WO2022059125A5 JP 2022550255 A JP2022550255 A JP 2022550255A JP 2022550255 A JP2022550255 A JP 2022550255A JP WO2022059125 A5 JPWO2022059125 A5 JP WO2022059125A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
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- type
- algan
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910002704 AlGaN Inorganic materials 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 18
- 230000000903 blocking effect Effects 0.000 claims description 9
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 229910052984 zinc sulfide Inorganic materials 0.000 claims 1
- 238000005253 cladding Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 239000000969 carrier Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000004807 localization Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000731 high angular annular dark-field scanning transmission electron microscopy Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/035236 WO2022059125A1 (ja) | 2020-09-17 | 2020-09-17 | 窒化物半導体紫外線発光素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022059125A1 JPWO2022059125A1 (https=) | 2022-03-24 |
| JPWO2022059125A5 true JPWO2022059125A5 (https=) | 2023-09-05 |
| JP7570424B2 JP7570424B2 (ja) | 2024-10-21 |
Family
ID=80776562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022550255A Active JP7570424B2 (ja) | 2020-09-17 | 2020-09-17 | 窒化物半導体紫外線発光素子 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12419142B2 (https=) |
| JP (1) | JP7570424B2 (https=) |
| TW (1) | TWI883207B (https=) |
| WO (1) | WO2022059125A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023203599A1 (ja) * | 2022-04-18 | 2023-10-26 | 日機装株式会社 | 窒化物半導体紫外線発光素子 |
| CN117691021A (zh) * | 2023-12-14 | 2024-03-12 | 苏州立琻半导体有限公司 | 低接触电阻的外延结构及发光装置 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8513643B2 (en) * | 2006-09-06 | 2013-08-20 | Palo Alto Research Center Incorporated | Mixed alloy defect redirection region and devices including same |
| JP5142371B2 (ja) | 2007-11-15 | 2013-02-13 | 国立大学法人東北大学 | 紫外線窒化物半導体発光素子およびその製造方法 |
| WO2012012010A2 (en) | 2010-04-30 | 2012-01-26 | Trustees Of Boston University | High efficiency ultraviolet light emitting diode with band structure potential fluctuations |
| KR20140043161A (ko) | 2011-08-09 | 2014-04-08 | 소코 가가쿠 가부시키가이샤 | 질화물 반도체 자외선 발광 소자 |
| US9064980B2 (en) | 2011-08-25 | 2015-06-23 | Palo Alto Research Center Incorporated | Devices having removed aluminum nitride sections |
| WO2014178288A1 (ja) | 2013-04-30 | 2014-11-06 | 創光科学株式会社 | 紫外線発光装置 |
| JP5698321B2 (ja) | 2013-08-09 | 2015-04-08 | Ｄｏｗａエレクトロニクス株式会社 | Ｉｉｉ族窒化物半導体エピタキシャル基板およびｉｉｉ族窒化物半導体発光素子ならびにこれらの製造方法 |
| JP2015216352A (ja) | 2014-04-24 | 2015-12-03 | 国立研究開発法人理化学研究所 | 紫外発光ダイオードおよびそれを備える電気機器 |
| WO2016004374A1 (en) * | 2014-07-02 | 2016-01-07 | Trustees Of Boston University | Ultraviolet light emitting diodes |
| WO2016157518A1 (ja) | 2015-04-03 | 2016-10-06 | 創光科学株式会社 | 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光装置 |
| EP3293774B1 (en) | 2015-07-21 | 2020-03-18 | Soko Kagaku Co., Ltd. | Nitride semiconductor ultraviolet light-emitting element |
| WO2019102557A1 (ja) | 2017-11-22 | 2019-05-31 | 創光科学株式会社 | 窒化物半導体発光素子 |
| JP6727186B2 (ja) * | 2017-12-28 | 2020-07-22 | 日機装株式会社 | 窒化物半導体素子の製造方法 |
| WO2019159265A1 (ja) | 2018-02-14 | 2019-08-22 | 創光科学株式会社 | 窒化物半導体紫外線発光素子 |
| JP7335065B2 (ja) | 2018-10-24 | 2023-08-29 | 旭化成株式会社 | 受発光装置 |
-
2020
- 2020-09-17 JP JP2022550255A patent/JP7570424B2/ja active Active
- 2020-09-17 US US18/022,147 patent/US12419142B2/en active Active
- 2020-09-17 WO PCT/JP2020/035236 patent/WO2022059125A1/ja not_active Ceased
-
2021
- 2021-06-16 TW TW110121925A patent/TWI883207B/zh active
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