TWI883207B - 氮化物半導體紫外線發光元件 - Google Patents

氮化物半導體紫外線發光元件 Download PDF

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Publication number
TWI883207B
TWI883207B TW110121925A TW110121925A TWI883207B TW I883207 B TWI883207 B TW I883207B TW 110121925 A TW110121925 A TW 110121925A TW 110121925 A TW110121925 A TW 110121925A TW I883207 B TWI883207 B TW I883207B
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TW
Taiwan
Prior art keywords
layer
type
region
molar fraction
algan
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Application number
TW110121925A
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English (en)
Chinese (zh)
Other versions
TW202213814A (zh
Inventor
平野光
長澤陽祐
Original Assignee
日商日機裝股份有限公司
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Application filed by 日商日機裝股份有限公司 filed Critical 日商日機裝股份有限公司
Publication of TW202213814A publication Critical patent/TW202213814A/zh
Application granted granted Critical
Publication of TWI883207B publication Critical patent/TWI883207B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions

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  • Led Devices (AREA)
TW110121925A 2020-09-17 2021-06-16 氮化物半導體紫外線發光元件 TWI883207B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2020/035236 WO2022059125A1 (ja) 2020-09-17 2020-09-17 窒化物半導体紫外線発光素子
WOPCT/JP2020/035236 2020-09-17

Publications (2)

Publication Number Publication Date
TW202213814A TW202213814A (zh) 2022-04-01
TWI883207B true TWI883207B (zh) 2025-05-11

Family

ID=80776562

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110121925A TWI883207B (zh) 2020-09-17 2021-06-16 氮化物半導體紫外線發光元件

Country Status (4)

Country Link
US (1) US12419142B2 (https=)
JP (1) JP7570424B2 (https=)
TW (1) TWI883207B (https=)
WO (1) WO2022059125A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023203599A1 (ja) * 2022-04-18 2023-10-26 日機装株式会社 窒化物半導体紫外線発光素子
CN117691021A (zh) * 2023-12-14 2024-03-12 苏州立琻半导体有限公司 低接触电阻的外延结构及发光装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201931623A (zh) * 2017-12-28 2019-08-01 日商日機裝股份有限公司 氮化物半導體元件以及氮化物半導體元件的製造方法
WO2019159265A1 (ja) * 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子

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US8513643B2 (en) * 2006-09-06 2013-08-20 Palo Alto Research Center Incorporated Mixed alloy defect redirection region and devices including same
JP5142371B2 (ja) 2007-11-15 2013-02-13 国立大学法人東北大学 紫外線窒化物半導体発光素子およびその製造方法
WO2012012010A2 (en) 2010-04-30 2012-01-26 Trustees Of Boston University High efficiency ultraviolet light emitting diode with band structure potential fluctuations
KR20140043161A (ko) 2011-08-09 2014-04-08 소코 가가쿠 가부시키가이샤 질화물 반도체 자외선 발광 소자
US9064980B2 (en) 2011-08-25 2015-06-23 Palo Alto Research Center Incorporated Devices having removed aluminum nitride sections
WO2014178288A1 (ja) 2013-04-30 2014-11-06 創光科学株式会社 紫外線発光装置
JP5698321B2 (ja) 2013-08-09 2015-04-08 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体エピタキシャル基板およびｉｉｉ族窒化物半導体発光素子ならびにこれらの製造方法
JP2015216352A (ja) 2014-04-24 2015-12-03 国立研究開発法人理化学研究所 紫外発光ダイオードおよびそれを備える電気機器
WO2016004374A1 (en) * 2014-07-02 2016-01-07 Trustees Of Boston University Ultraviolet light emitting diodes
WO2016157518A1 (ja) 2015-04-03 2016-10-06 創光科学株式会社 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光装置
EP3293774B1 (en) 2015-07-21 2020-03-18 Soko Kagaku Co., Ltd. Nitride semiconductor ultraviolet light-emitting element
WO2019102557A1 (ja) 2017-11-22 2019-05-31 創光科学株式会社 窒化物半導体発光素子
JP7335065B2 (ja) 2018-10-24 2023-08-29 旭化成株式会社 受発光装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201931623A (zh) * 2017-12-28 2019-08-01 日商日機裝股份有限公司 氮化物半導體元件以及氮化物半導體元件的製造方法
WO2019159265A1 (ja) * 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
期刊 K. Kojima, et al. Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AlN template with macrosteps Applied Physics letter 114, 011102 Applied Physics letter 2019 011102-1~5 *

Also Published As

Publication number Publication date
WO2022059125A1 (ja) 2022-03-24
US12419142B2 (en) 2025-09-16
US20230307578A1 (en) 2023-09-28
JPWO2022059125A1 (https=) 2022-03-24
JP7570424B2 (ja) 2024-10-21
TW202213814A (zh) 2022-04-01

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