JPWO2022219731A5 - - Google Patents

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JPWO2022219731A5
JPWO2022219731A5 JP2023514234A JP2023514234A JPWO2022219731A5 JP WO2022219731 A5 JPWO2022219731 A5 JP WO2022219731A5 JP 2023514234 A JP2023514234 A JP 2023514234A JP 2023514234 A JP2023514234 A JP 2023514234A JP WO2022219731 A5 JPWO2022219731 A5 JP WO2022219731A5
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sapphire substrate
algan
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JP2023514234A
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JP7680529B2 (ja
JPWO2022219731A1 (https=
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Priority claimed from PCT/JP2021/015380 external-priority patent/WO2022219731A1/ja
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JP2023514234A 2021-04-14 2021-04-14 窒化物半導体紫外線発光素子及びその製造方法 Active JP7680529B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/015380 WO2022219731A1 (ja) 2021-04-14 2021-04-14 窒化物半導体紫外線発光素子及びその製造方法

Publications (3)

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JPWO2022219731A1 JPWO2022219731A1 (https=) 2022-10-20
JPWO2022219731A5 true JPWO2022219731A5 (https=) 2024-03-05
JP7680529B2 JP7680529B2 (ja) 2025-05-20

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JP2023514234A Active JP7680529B2 (ja) 2021-04-14 2021-04-14 窒化物半導体紫外線発光素子及びその製造方法

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JP (1) JP7680529B2 (https=)
TW (1) TWI907573B (https=)
WO (1) WO2022219731A1 (https=)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007214384A (ja) * 2006-02-09 2007-08-23 Rohm Co Ltd 窒化物半導体素子
JP6252092B2 (ja) * 2013-10-17 2017-12-27 日亜化学工業株式会社 窒化物半導体積層体及びそれを用いた発光素子
WO2019159265A1 (ja) * 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子

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