JPWO2022219731A1 - - Google Patents
Info
- Publication number
- JPWO2022219731A1 JPWO2022219731A1 JP2023514234A JP2023514234A JPWO2022219731A1 JP WO2022219731 A1 JPWO2022219731 A1 JP WO2022219731A1 JP 2023514234 A JP2023514234 A JP 2023514234A JP 2023514234 A JP2023514234 A JP 2023514234A JP WO2022219731 A1 JPWO2022219731 A1 JP WO2022219731A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2021/015380 WO2022219731A1 (ja) | 2021-04-14 | 2021-04-14 | 窒化物半導体紫外線発光素子及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022219731A1 true JPWO2022219731A1 (https=) | 2022-10-20 |
| JPWO2022219731A5 JPWO2022219731A5 (https=) | 2024-03-05 |
| JP7680529B2 JP7680529B2 (ja) | 2025-05-20 |
Family
ID=83639883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023514234A Active JP7680529B2 (ja) | 2021-04-14 | 2021-04-14 | 窒化物半導体紫外線発光素子及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7680529B2 (https=) |
| TW (1) | TWI907573B (https=) |
| WO (1) | WO2022219731A1 (https=) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015079844A (ja) * | 2013-10-17 | 2015-04-23 | 日亜化学工業株式会社 | 窒化物半導体積層体及びそれを用いた発光素子 |
| WO2019159265A1 (ja) * | 2018-02-14 | 2019-08-22 | 創光科学株式会社 | 窒化物半導体紫外線発光素子 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007214384A (ja) * | 2006-02-09 | 2007-08-23 | Rohm Co Ltd | 窒化物半導体素子 |
-
2021
- 2021-04-14 WO PCT/JP2021/015380 patent/WO2022219731A1/ja not_active Ceased
- 2021-04-14 JP JP2023514234A patent/JP7680529B2/ja active Active
- 2021-11-30 TW TW110144622A patent/TWI907573B/zh active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015079844A (ja) * | 2013-10-17 | 2015-04-23 | 日亜化学工業株式会社 | 窒化物半導体積層体及びそれを用いた発光素子 |
| WO2019159265A1 (ja) * | 2018-02-14 | 2019-08-22 | 創光科学株式会社 | 窒化物半導体紫外線発光素子 |
Non-Patent Citations (3)
| Title |
|---|
| KOJIMA, K. ET AL.: "Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an A", APPLIED PHYSICS LETTERS, vol. 114, JPN7020002979, 7 January 2019 (2019-01-07), US, pages 011102, ISSN: 0005498489 * |
| NAGASAWA, YOSUKE ET AL.: "Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based", JOUANAL OF APPLIED PHYSICS, vol. 126, JPN7020002980, 3 December 2019 (2019-12-03), US, pages 215703, ISSN: 0005498491 * |
| SHI, HENGZHI ET AL.: "Performance improvements of AlGaN-based deep-ultraviolet light-emitting diodes with specifically des", OPTICS COMMUNICATIONS, vol. 441, JPN6021000066, 27 February 2019 (2019-02-27), pages 149 - 154, ISSN: 0005498490 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7680529B2 (ja) | 2025-05-20 |
| TW202240932A (zh) | 2022-10-16 |
| WO2022219731A1 (ja) | 2022-10-20 |
| TWI907573B (zh) | 2025-12-11 |
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