JP7680529B2 - 窒化物半導体紫外線発光素子及びその製造方法 - Google Patents

窒化物半導体紫外線発光素子及びその製造方法 Download PDF

Info

Publication number
JP7680529B2
JP7680529B2 JP2023514234A JP2023514234A JP7680529B2 JP 7680529 B2 JP7680529 B2 JP 7680529B2 JP 2023514234 A JP2023514234 A JP 2023514234A JP 2023514234 A JP2023514234 A JP 2023514234A JP 7680529 B2 JP7680529 B2 JP 7680529B2
Authority
JP
Japan
Prior art keywords
layer
region
algan
mole fraction
type layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023514234A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022219731A5 (https=
JPWO2022219731A1 (https=
Inventor
光 平野
陽祐 長澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikkiso Co Ltd
Original Assignee
Nikkiso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikkiso Co Ltd filed Critical Nikkiso Co Ltd
Publication of JPWO2022219731A1 publication Critical patent/JPWO2022219731A1/ja
Publication of JPWO2022219731A5 publication Critical patent/JPWO2022219731A5/ja
Application granted granted Critical
Publication of JP7680529B2 publication Critical patent/JP7680529B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Led Devices (AREA)
JP2023514234A 2021-04-14 2021-04-14 窒化物半導体紫外線発光素子及びその製造方法 Active JP7680529B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/015380 WO2022219731A1 (ja) 2021-04-14 2021-04-14 窒化物半導体紫外線発光素子及びその製造方法

Publications (3)

Publication Number Publication Date
JPWO2022219731A1 JPWO2022219731A1 (https=) 2022-10-20
JPWO2022219731A5 JPWO2022219731A5 (https=) 2024-03-05
JP7680529B2 true JP7680529B2 (ja) 2025-05-20

Family

ID=83639883

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023514234A Active JP7680529B2 (ja) 2021-04-14 2021-04-14 窒化物半導体紫外線発光素子及びその製造方法

Country Status (3)

Country Link
JP (1) JP7680529B2 (https=)
TW (1) TWI907573B (https=)
WO (1) WO2022219731A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015079844A (ja) 2013-10-17 2015-04-23 日亜化学工業株式会社 窒化物半導体積層体及びそれを用いた発光素子
WO2019159265A1 (ja) 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007214384A (ja) * 2006-02-09 2007-08-23 Rohm Co Ltd 窒化物半導体素子

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015079844A (ja) 2013-10-17 2015-04-23 日亜化学工業株式会社 窒化物半導体積層体及びそれを用いた発光素子
WO2019159265A1 (ja) 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
KOJIMA, K. et al.，Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AlN template with macrosteps，Applied Physics Letters，米国，AIP Publishing，2019年01月07日，Vol.114，011102
NAGASAWA, Yosuke et al.，Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based deep-ultraviolet LEDs grown on AlN templates with dense macrosteps using cathodoluminescence spectroscopy，Jouanal of Applied Physics，米国，AIP Publishing，2019年12月03日，Vol.126，215703
SHI, Hengzhi et al.，Performance improvements of AlGaN-based deep-ultraviolet light-emitting diodes with specifically designed irregular sawtooth hole and electron blocking layers，Optics Communications，Vol.441，2019年02月27日，p.149-154，https://doi.org/10.1016/j.optcom.2019.02.054

Also Published As

Publication number Publication date
TW202240932A (zh) 2022-10-16
WO2022219731A1 (ja) 2022-10-20
JPWO2022219731A1 (https=) 2022-10-20
TWI907573B (zh) 2025-12-11

Similar Documents

Publication Publication Date Title
US11217726B2 (en) Nitride semiconductor ultraviolet light-emitting element
US12446368B2 (en) Nitride semiconductor ultraviolet light-emitting element
JP7570424B2 (ja) 窒化物半導体紫外線発光素子
US12419139B2 (en) Nitride semiconductor ultraviolet light-emitting element and production method therefor
US12324279B2 (en) Nitride semiconductor ultraviolet light-emitting element
JP7462047B2 (ja) 窒化物半導体紫外線発光素子及びその製造方法
JP7680529B2 (ja) 窒化物半導体紫外線発光素子及びその製造方法
JP7561205B2 (ja) 窒化物半導体紫外線発光素子
JP7672778B2 (ja) 窒化物半導体紫外線発光素子の製造方法、及び、窒化物半導体紫外線発光素子

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240222

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240222

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250107

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250303

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250507

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250508

R150 Certificate of patent or registration of utility model

Ref document number: 7680529

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150